Effect of Ag underlayer thickness on the microstructure and magnetic properties of L10-FePt films

FePt/Ag films were deposited on thermally oxidized Si(100) substrates by magnetron sputtering at room temperature and then the as-deposited films were annealed at 500 ^°C. The microstructure and magnetic properties of the films have been investigated by X-ray diffraction and vibrating sample magnetometry. The results indicate that introduction of the Ag underlayer promotes an ordering transformation of the FePt phase due to thermal tensile stress between the Ag underlayer and the FePt film. The in-plane tensile stress induced by the Ag underlayer should stretch the horizontal lattice parameter of FePt; thus, it is helpful for the ordering transformation. With increasing Ag underlayer thickness, the ordering parameter and coercivity first increase and then decrease. When the Ag underlayer thickness is 12 nm, the ordering parameter and coercivity of the film reach the maximum values, respectively. The Ag underlayer thickness also affects the magnetization reversal mechanism.     

Effect of annealing on contact performance and electrical properties of p-type high purity germanium single crystal

Van de Pauw Hall measurement is an effective method to characterize the properties of semiconductors, such as bulk concentration, mobility, and resistivity, all of which are used to describe the purity level in the semiconductors. However, the performance of the ohmic contacts has a direct impact on the reliability and accuracy of the results obtained from the Van de Pauw Hall measurement. In the present work, the influences of different annealing techniques on the performance of the InSn ohmic contacts have been investigated using a High Purity Germanium (HPGe) crystal sample. The results show that the preferred annealing condition is at 400 °C for 1 hour, which has provided a significant improvement of the InSn contact quality and microscopic homogenization of the impurities in the HPGe crystal. The carrier concentration, charge mobility, and resistivity of the sample annealed at 400 °C for 1 hour are 5.772×10¹⁰/cm³, 1.883×10⁴× cm²/Vs, and 5.795×10³×Ω?cm at 77 K, respectively.     

深水域近水面水下爆炸水柱形态及演变实验研究

 为研究不同起爆深度的水下爆炸水柱形态及演变特征,进行了1 kg球形RDX装药在不同起爆深度下的海上爆炸实验,通过高速摄像机记录装药起爆后水柱的形成和成长过程,获得了喷射水柱形态的演变特征以及水柱高度、直径、水柱突出水面时间等参数的变化规律,并与Cole、Hole和Swisdak等人的研究结果进行对比分析。研究结果表明：对于深水域近水面水下爆炸,水柱以垂直喷射形态为主,当气泡在膨胀阶段到达水面时水柱存在微弱的径向飞散现象;水柱最大高度随起爆深度呈脉动变化,水柱直径随起爆深度线性减小;Swisdak关于水柱最大高度的计算公式不适用深水域近水面水下爆炸情况。     

平面火花隙三电极开关研制及性能测试

 研制了一种适用于平行板传输连接的平面火花隙三电极开关，开关正负电极为半圆形状，触发电极为细条状。将之替代立体式（半球形电极）火花隙三电极开关并应用于爆炸箔起爆装置中，装置回路参数将得以优化。实验测试了空气间隙为4.12， 3.14和2.2 mm的平面火花隙三电极开关的性能。结果表明，在开关间隙间距一定的情况下，随着电压的升高，开关间隙的放电时延和分散时间呈指数降低，开关电感小于15 nH；对于不同范围内的应用电压，使用不同间隙间距的开关，其分散时间不大于10 ns。该开关应用于较低充电电压（小于10 kV）的脉冲功率装置中，与立体式火花隙三电极开关相比，回路电感降低了约50 nH，放电周期缩短近1/3，峰值电流增加约1/3。     

科学和艺术

科学与完美是不是一致的？科学家们是否有权使用完美这个词？至少，对于物理学家和数学家来说答案是肯定的“是”．2002年，温伯格（Steven Weinberg）写道：“近代物理学的一些重要方程式是科学知识的永久部分，甚至比它们较早出现的美丽大教堂还要经久不衰．”1960年代，狄拉克（Paul A．M．Dirac）有句名言：“完整的方程式之完美较之它们适合实验结果更为重要．”1965年诺贝尔物理学奖获得者费因曼（Richard P．Feynman）也坚信他提出的一项理论，即使该理论显得与实验数据有矛盾．1957年，他写道：“理论是优雅和完美的，重大事件是短暂的闪光．”     

外应力场下铁磁/反铁磁双层膜系统的铁磁共振性质

从系统能量出发，采用Smith和Beljers理论方法研究了铁磁/反铁磁双层膜系统在外应力场下的铁磁共振现象.本模型中铁磁薄层具有单轴磁晶各向异性和立方磁晶各向异性，而反铁磁层非常薄因而其能量可忽略.推导出了该系统的铁磁共振频率和频谱宽度的解析式.结果表明：外应力场仅在低磁场下对具有立方磁晶各向异性系统的铁磁共振有影响，且区分弱磁场和强磁场的临界场依赖于外应力场的方向. 关键词： 铁磁/反铁磁双层膜 交换偏置 铁磁共振 应力场     

激光散射及光电子技术对液晶特性的测试

激光散射和光电子技术是目前测试液晶特性最先进和可靠的手段。此技术通过静态光散射和动态光散射两种测试方法，测得液晶的分子量、浊度系数、相关长度、相变温度、展矩和扭矩等许多物理参数，因此可判断液晶的类型，了解液晶的结构、形态，相转移及动态变形的过程，为液晶在许多领域的应用提供可靠的理论依据。     

八信道高温超导多路器的实验研究

文中首先分析八信道高温超导多路器设计的方案,以及实现八信道高温超导多路器的技术;给出了用MgO基片为衬底,YBCO超导膜制备的高温超导滤波器设计仿真曲线及实际测试曲线;并对多路器所用制冷器的制冷量进行了计算;最后给出八信道高温超导多路器的实际测试曲线。     

说说我们的家园——地球的命运

国人大概都知道杞人忧天的故事．相传战国时列御寇所撰《列子》一书中的《天瑞》篇载有“杞国有人，忧天地崩坠，身亡所寄，废寝食者”；唐朝大诗人李白《梁甫吟》一诗中也提到这件事：“白日不照吾精诚，杞国无事忧天倾”；清李汝珍所著《镜花缘》第二十七回也有言：“杞人忧天，伯虑愁眠”．说的都是古时候杞国有个人，老爱瞎操心，明明不用担忧的事情，他也是不放心，特别是害怕天会塌下来，弄得自己无处安身．     

Hall Conductivity in a Quasi—Two—Dimensional disordered Electron System

By making use of the diagrammatic techniques in perturbation theory,we have investigated the Hall effect in a quasi-two dimensional disordered electron system.In the weakly localized regime,the analytical expression for quantum correction to Hall conductivity has been obtained using the kubo formalism and quasiclassical approximation.The relevant dimensional crossover behavior from three dimensions to two dimensions with decreasing the interlayer hopping energy is discussed.The quantum interference effect is shown to have a vanishing correction to the Hall coefficient.