Propagation of high-power partially coherent fibre laser beams in a real environment

The propagation performance of high-power partially coherent fibre laser beams in a real environment is investigated and the theoretical model of a high-power fibre laser propagating in a real environment is established. The influence of a collimating system and thermal blooming is considered together with atmospheric turbulence and mechanical jitter. The laser energy concentration of partially coherent beams in the far field is calculated and analysed based on the theoretical model. It is shown that the propagation performance of partially coherent beams depends on the collimating system, atmospheric turbulence, mechanical jitter and thermal blooming. The propagation performance of partially coherent beams and fully coherent beams is studied and the results show that partially coherent beams are less sensitive to the influence of thermal blooming, which results in that the energy degeneration for partially coherent beams is only 50% of that for fully coherent beams. Both partially coherent beams and fully coherent beams become less sensitive to thermal blooming when the average structural constant of the refraction index fluctuations increases to 1.7 × 10^-14 m^-2/3. The investigation presents a reference for applications of a high-power fibre laser system.     

硫化砷非晶态波导光阻断效应的机理研究

在实验研究了As₂S₈和掺杂As₂S₈薄膜波导光阻断效应的基础上,讨论了反常电子组态的形成机理和转移机理,提出了光阻断效应切断过程和回复过程的动力学模型,数值分析结果与实验数据十分符合,理论预期与实验现象一致,表明该模型抓住了光阻断效应的基本特征,揭示了过程本质,反映了实验现象的内在机理. 关键词： 光波导技术 硫属化合物玻璃 光阻断效应 动力学模型     

Influence of cesium on the stability of a GaAs photocathode

The stability of a reflection-mode GaAs photocathode has been investigated by monitoring the photocurrent and the spectral response at room temperature.We observe the photocurrent of the cathode decaying with time in the vacuum system under the action of Cs current,and find that the Cs atoms residing in the vacuum system are helpful in prolonging the life of the cathode.We examine the evolution and analyse the influence of the barrier on the spectral response of the cathode.Our results support the double dipolar model for the explanation of the negative electron affinity effect.     

Sr0.6Ba0.2Ca0.2Al2O4 ∶Eu,Dy的制备与长余辉发光性能研究

采用高温固相法制备了Ca,Ba共掺的Sr_0.6Ba_0.2Ca_0.2Al₂O₄ ∶Eu²⁺_0.01, Dy³⁺_0.02和单掺Ba的Sr_0.6Ba_0.4Al₂O₄ ∶Eu²⁺_0.01, 关键词： 长余辉 铝酸锶 稀土掺杂 陷阱能级     

Bias dependence of a deep submicron NMOSFET response to total dose irradiation

Deep submicron n-channel metal-oxide-semiconductor field-effect transistors (NMOSFETs) with shallow trench isolation (STI) are exposed to ionizing dose radiation under different bias conditions.The total ionizing dose radiation induced subthreshold leakage current increase and the hump effect under four different irradiation bias conditions including the worst case (ON bias) for the transistors are discussed.The high electric fields at the corners are partly responsible for the subthreshold hump effect.Charge trapped in the isolation oxide,particularly at the Si/SiO 2 interface along the sidewalls of the trench oxide creates a leakage path,which becomes a dominant contributor to the offstate drain-to-source leakage current in the NMOSFET.Non-uniform charge distribution is introduced into a threedimensional (3D) simulation.Good agreement between experimental and simulation results is demonstrated.We find that the electric field distribution along with the STI sidewall is important for the radiation effect under different bias conditions.     

分子晶体的高压Raman光谱及结构相变

 本文综合我们从NH₃F（氟化胺）、HCCl₃（氯仿）、HCBr₃（溴仿）、S₈（硫）和C₃N₆H₆（三聚氰胺）等分子晶体获得的高压Raman光谱数据，讨论了分子晶体Raman光谱的谱带强度，频率位移，晶场劈裂和Grüneisen常数等对压力的依赖关系。总结了分子晶体压致结构相变的光谱证据和高压新相结构确定的几种方法。     

Electron-electron interaction in strong electromagnetic fields: the two-electron contribution to the ground-state energy in He-like uranium

Radiative recombination transitions into the ground state of cooled bare and hydrogenlike uranium ions were measured at the storage ring ESR. By comparing the corresponding x-ray centroid energies, this technique allows for a direct measurement of the electron-electron contribution to the ionization potential in the heaviest He-like ions. For the two-electron contribution to the ionization potential of He-like uranium we obtain a value of 2248+/-9 eV. This represents the most accurate determination of two-electron effects in the domain of high-Z He-like ions, and the accuracy reaches already the size of the specific two-electron radiative QED corrections.     

低覆盖度的Au/GaN(0001)界面的同步辐射研究

利用同步辐射光电子能谱研究了低覆盖度Au在GaN(0001)表面的初始生长模式,肖特基势垒高 度以及界面的电子结构.结果表明，Au沉积初始阶段有界面的化学反应,随后呈三维岛状生长 .由光电子能谱实验确定的肖特基势垒高度为14 eV. 通过对界面价带谱和Au 4f芯能级谱 的分析,确定了界面化学反应的存在.利用线性缀加平面波方法计算了GaN(0001)和Au的价带 态密度并分析了化学反应产生的机理,认为在初始阶段界面形成了Au_Ga合金. 关键词： 同步辐射 光电子能谱 Au/GaN欧姆接触 态密度     

γ-LiAlO2晶体生长、改性和热学性质研究

采用快速提拉法生长出了透明、完整的γ-LiAlO₂晶体，但是晶体的高熔点和易 挥发性限制了γ-LiAlO₂晶体质量.采用气相传输平衡法（vapor transport equilibra tion technique,VTE）工艺对晶体改性，半高宽（FWHM）值从1169arcsec降至442arcsec，继续升高VTE处理温度至1300℃，FWHM值反而升高至552arcsec.快速提拉法生长出来晶体，100］方向和［001］方向的热膨胀系数分别为172398×10^-6/K，107 664×10^-6/K.经过三步VTE处理后［100］和［001］方向热膨胀系数降至16 6539×10^-6/K和101784×10^-6/K. 关键词： 2')" href="#">γ-LiAlO₂ 气相传输平衡法 热膨胀系数     

γ-LiAlO2晶体生长、改性和热学性质研究

采用快速提拉法生长出了透明、完整的γ-LiAlO2晶体,但是晶体的高熔点和易挥发性限制了γ-LiAlO2晶体质量.采用气相传输平衡法(vapor transport equilibration technique,VTE)工艺对晶体改性,半高宽(FWHM)值从116.9arcsec降至44.2arcsec,继续升高VTE处理温度至1300℃,FWHM值反而升高至55.2arcsec.快速提拉法生长出来晶体,[100]方向和[001]方向的热膨胀系数分别为17.2398×10-6/K,10.7664×10-6/K.经过三步VTE处理后[100]和[001]方向热膨胀系数降至16.6539×10-6/K和10.1784×10-6/K.