铜表面腐蚀的激光扫描微区光电压图象的研究

铜表面腐蚀的激光扫描微区光电压图象的研究杨迈之，张雯，蔡生民，任聚杰（北京大学化学系，北京，１０００７１）（河北医学院化学系，石家庄）潘传智，杨勇（浙江工业大学化工系，杭州）（厦门大学化学系，厦门）关键词铜，缓蚀剂，微区光电压图铜的腐蚀与防腐早已引起...     

Bamboo-shaped Ag-doped TiO2 nanowires with heterojunctions

Bamboo-shaped Ag-doped TiO2 nanowires with heterojunctions were synthesized by a simple solvothermal method. The diameter of the nanowires was about 50-100 nm, and they had a length of up to a few millimeters. The detailed structure of the heterojunction in the nanowire was also characterized.     

Controlled growth of large-area, uniform, vertically aligned arrays of alpha-Fe2O3 nanobelts and nanowires

Vertically aligned iron oxide nanobelt and nanowire arrays have been synthesized on a large-area surface by direct thermal oxidation of iron substrates under the flow of O(2). The effects of reactive gas pressure, composition, and temperature have been systematically studied. It was found that nanobelts (width, tens of nanometers; thickness, a few nanometers) are produced in the low-temperature region (approximately 700 degrees C) whereas cylindrical nanowires tens of nanometers thick are formed at relatively higher temperatures (approximately 800 degrees C). Both nanobelts and nanowires are mostly bicrystallites with a length of tens of micrometers which grow uniquely along the [110] direction. The growth habits of the nanobelts and nanowires in the two temperature regions indicate the role of growth rate anisotropy and surface energy in dictating the ultimate nanomorphologies.     

1β—Methyl Carbapenem中间体的合成

综述了１β－Ｍｅｔｈｙｌ Ｃａｒｂａｐｅｎｅｍ中间体的合成方法，重点强调了如何构筑１位β构型的甲基。参考文献３７篇。     

Research on Crystal Structure of the Complex of 10－Hydroxy－10－（3－indolyl）－9－phenanthrenone with Tetrahydrofuran

ＲｅｓｅａｒｃｈｏｎＣｒｙｓｔａｌＳｔｒｕｃｔｕｒｅｏｆｔｈｅＣｏｍｐｌｅｘｏｆ１０－Ｈｙｄｒｏｘｙ－１０－（３－ｉｎｄｏｌｙｌ）－９－ｐｈｅｎａｎｔｈｒｅｎｏｎｅｗｉｔｈＴｅｔｒａｈｙｄｒｏｆｕｒａｎＭｅｎｇＪｉ－Ｂｅｎ；ＷｅｎＺｈｏｎｇ；Ｗａｎｇ...     

聚（3—丁基噻吩）电导的热稳定性

研究了导电聚合物聚（３－丁基噻吩）（ＰＢＴ）在大气环境下的导电热稳定性。在室温至２２０℃范围内，测试电导率随时间及温度的变化。ＴＧＡ分析以及化学分析的结果表明：掺杂态的ＰＢＴ大约在１４０℃附近有一转化温度，低于或高于这一转化温度，电导率下降的决定因素各不相同。高于转化温度时，电导率下降的主要原因是反离子和高分子主链的解离，进而发生化学反应，影响了高分子主链的结构。ＸＰＳ测试结果表明：经热处理后的Ｐ     

Recent Advances in Rare‐Earth Polypnictides

The polypnictide complexes of rare earth cations have drawn the attention of the scientific community for their uncommon bonding modes and potential applications. Herein, we present a systematic and comprehensive summary on recent advances in the field of rare earth polypnictides, focusing on their synthesis, structures, and reactivities. The structural stabilizing effects imposed by the electropositive rare earth cations as well as the reducing capability of rare earth precursors in the synthesis of these polypnictide complexes are described in this review. We also disscuss in detail the bonding interactions and coordination modes between rare earth cations and polypnictide clusters as well as the similarities and the peculiarity of some structures.     

离子液体中用Heck反应合成2-取代萘烯丙醇化合物

利用Heck反应, 在离子液体、金属钯或镍、碱和膦配体反应体系中, 由卤代萘与烯丙醇反应, 制得了高收率和高选择性的2-取代萘烯丙醇化合物. 该方法原料便宜易得、操作简单、反应体系可循环使用. 并讨论了醋酸镍替代醋酸钯、不同膦配体、溶剂及碱对反应转化率的影响. 通过核磁共振、红外光谱、质谱和元素分析对产物的结构进行了表征.     

Pore size distributions in low‐k dielectric thin films from X‐ray porosimetry

X‐ray reflectivity has been used to determine the mass uptake of probe molecules in porous thin films supported on thick silicon wafers. The adsorption occurs by capillary condensation when the films are exposed to probe vapor at controlled partial vapor pressures. The probe solvent partial pressure was varied by mixing saturated air and dry air at constant temperature or by changing sample temperature at a constant vapor concentration. Pore size distribution in the films can be calculated from the probe uptake with typical porosimetric approaches such as the application of the Kelvin equation to convert partial pressure into pore size. For illustration, the pore size distribution of three different nanoporous thin films, the primary candidate of ultra‐low‐k interlevel dielectrics in the next generation of integrated circuit chips, was determined with this technique. These samples represent different generations of low‐k dielectrics developed by industry. © 2002 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 40: 2170–2177, 2002