Ce偶-偶同位素低激发态性质的IBM2描述

通过考虑同类核子相干对间的四极相互作用，在IBM2中对Ce偶－偶同位素^128Ce-^138Ce的低激发态能谱和E2跃迁几率及分支比进行了理论分析，计算结果有效地改善了IBM中这些核的γ带能谱的Staggering现象描述，与实验观察到的低激发态结果基本一致。     

SHFE与LME期铜价格关系实证研究

本文介绍了Granger引导关系模型,并利用这个模型对伦敦金属交易所(LME)三个月期铜和上海期货交易所(SHFE)五个月期铜进行了价格引导关系检验。检验结果显示,伦敦金属交易所三个月期铜价格滞后引导上海期货交易所五个月期铜价格,但是上海期货交易所对伦敦金属交易所的期铜价格不具有滞后价格引导关系。     

Limit distribution of the number of consecutive records

A succinct series expression is derived for describing the limit distribution of the number of times r consecutive elements are all records (in a sequence of independent and identically distributed random variables with a common continuous distribution) for all r ≥ 2. Previously, only the limit distributions for r = 1, 2, and 3 were known. © 2005 Wiley Periodicals, Inc. Random Struct. Alg., 2005     

Syntheses and Structures of Sil abridged Hafnocene Dichlorides

The present paper covers three silabridged hafnocene dichlorides(1, 2 and 3) prepared by sequential reactions of α, ω-dichloropermethyl polysilane with cyclopentadienyl sodium, n-butyl lithium and hafnium tetrachloride. Their structures were characterized by elemental analyses, UV, 1H(13C) NMR and MS. Furthermore the crystal and molecular structures of 1 and 2 were determined by X-ray diffraction method. The crystal of 1 is monoclinic, space group C2/c with a=1. 3401(4), b=0. 9977(3), c = 1. 0922(4) nm; β=94. 07(1)° V=3. 6342 nm3, Z = 2, Dc = 2.155 g·cm-3. The final deviation factor R = 0. 064. The crystal of 2 is monoclinic, space group P21/c with a=0.0847(1), b=1.5181(1), c=2.9824(2) nm; β= 94. 07(1)°? V=3.634 nm3; Dc= l. 805 g·cm-3. The final deviation factor R = 0. 033. The relationship between the silabridged structure and spectral properties is also discussed.     

青岛港货运吞吐量的时间序列模型

运用时间序列分析方法对时间序列建立ARMA,ARIMA模型.搜集了青岛港1999年1月～2003年5月的货运吞吐量数据,对进行分析,建立了青岛港货运吞吐量的模型.通过预留的部分数据对模型进行检验,并对模型的残差进行检验,得出模型比较合理.     

解抛物问题的一类新的瀑布型多重网格法

本文推广石钟兹 ,许学军对椭圆问题提出的新的瀑布型多重网格法到抛物问题 ,建立了相应的理论结果 .     

显像管调制特性的测量与分析

测试了显象管调制特性曲线，并分析了特性曲线与显像管工作原理．     

Tip-induced local anodic oxidation on p-GaAs surface with non-contact atomic force microscopy

Nano-sized oxide structures resulted from localized electrochemical oxidation induced by a negatively biased atomic force microscopy (AFM) tip operated with the non-contact mode were fabricated on p-GaAs(1 0 0) surface. The geometrical characteristics of the oxide patterns and their dependences on various fabrication parameters, e.g., the anodization time, the biased voltages, the tip scanning rates, as well as the formation mechanism and relevant growth kinetics are investigated. Results indicate that the height of the protruded oxide dots grow exponentially as a function of time in the initial stage of oxidation and soon reaches a maximum height depending linearly with the anodized voltages, in according with the behaviors predicted by space charge limited local oxidation mechanism. In addition, selective micro-Auger analysis of the anodized region reveals the formation of Ga(As)O_x, indicating the prominent role played by the field-induced nanometer-size water meniscus in producing the nanometer-scale oxide dots and bumps on p-GaAs(1 0 0) surface.