Tip-induced local anodic oxidation on p-GaAs surface with non-contact atomic force microscopy

Nano-sized oxide structures resulted from localized electrochemical oxidation induced by a negatively biased atomic force microscopy (AFM) tip operated with the non-contact mode were fabricated on p-GaAs(1 0 0) surface. The geometrical characteristics of the oxide patterns and their dependences on various fabrication parameters, e.g., the anodization time, the biased voltages, the tip scanning rates, as well as the formation mechanism and relevant growth kinetics are investigated. Results indicate that the height of the protruded oxide dots grow exponentially as a function of time in the initial stage of oxidation and soon reaches a maximum height depending linearly with the anodized voltages, in according with the behaviors predicted by space charge limited local oxidation mechanism. In addition, selective micro-Auger analysis of the anodized region reveals the formation of Ga(As)O_x, indicating the prominent role played by the field-induced nanometer-size water meniscus in producing the nanometer-scale oxide dots and bumps on p-GaAs(1 0 0) surface.     

Preparation,thermal properties,and flame retardance of epoxy–silica hybrid resins

A novel epoxy system was developed through the in situ curing of bisphenol A type epoxy and 4,4′‐diaminodiphenylmethane with the sol–gel reaction of a phosphorus‐containing trimethoxysilane (DOPO–GPTMS), which was prepared from the reaction of 9,10‐dihydro‐9‐oxa‐10‐phosphaphenanthrene‐10‐oxide (DOPO) with 3‐glycidoxypropyltrimethoxysilane (GPTMS). The preparation of DOPO–GPTMS was confirmed with Fourier transform infrared, ¹H and ³¹P NMR, and elemental analysis. The resulting organic–inorganic hybrid epoxy resins exhibited a high glass‐transition temperature (167 °C), good thermal stability over 320 °C, and a high limited oxygen index of 28.5. The synergism of phosphorus and silicon on flame retardance was observed. Moreover, the kinetics of the thermal oxidative degradation of the hybrid epoxy resins were studied. © 2003 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 41: 2354–2367, 2003     

用不变速度推导卢瑟福散射公式

通过横向速度变换得到两种不变速度，由此推出卢瑟福散射公式。     

Synthesis and transition temperatures of liquid crystals incorporating a 1,4-tetrafluorophenylene unit

Two homologous series of mesogenic materials which incorporate a 1,4-tetrafluorophenylene moiety and a terminal cyano- or nitro-substituent have been synthesized by using palladiumcatalysed coupling procedures. The compounds exhibit nematic and/or smectic A phases.     

First observation of yrast band in odd-odd162Lu

High spin states of the odd-odd¹⁶²Lu nucleus have been studied via¹⁴⁷Sm(¹⁹F,4nγ)¹⁶²Lu reaction at 95 MeV beam energy. Level scheme for yrast band based onπ[h_11/2 v[i_13/2] quasiparticle configuration was established up to I ^π = (23^?) for the first time. This band shows the signature inversion in energy before backbending generally appeared in this mass region. It is stressed that the signature splitting in¹⁶²Lu is larger than that in the¹⁶⁰Tm nucleus.     

CsBr高压X光研究

 采用同步辐射X光源和能散法，对CsBr粉末样品进行高压原位X光衍射实验。由金刚石对顶压砧高压装置（DAC）产生高压，用已知状态方程的Pt粉末作内标，由Pt的衍射数据确定样品压力，最高压力达64.4 GPa。实验结果表明：室温常压下原始CsBr样品是具有简单立方结构的晶体，其晶格常数α＝0.428 5 nm。高压下CsBr的结构有所变化，在51.3~58.4 GPa的压力范围内，(110)线和(211)线发生劈裂，从而形成了四方相。     

ROOM TEMPERATURE LIGHT-THERMO-DETECTOR MADE OF HIGH-Tc SUPERCONDUCTOR

Based on the anisotropic Seebeck tensor coefficients, a light-thermo-radiation detector made of high-T_c superconductor (YBa₂Cu₃O_7-δ) was fabricated, which can function at room temperature. The induced voltaic signals at various modulation frequencies for radiation from He-Ne laser and from a 500 K black body were measured. The noise ratio for detecting He-Ne laser radiation and the D^* for black body were evaluated. Compared with bolometer made of high-T_c superconductor which functions at liquid nitrogen, and with pyroelectric detector, it was found that the advantages of this new device are that the device can work at room temperature with very low noise and very fast response. Although having a lower D^* value than that of bolometer for the present device construction, we point out the possibility and the direction for improving the D^* value, hence the promising prospect of this kind of device.