Temperature-insensitive Mach-Zehnder interferometric strain sensor based on concatenating two waist-enlarged fiber tapers

A novel temperature-insensitive strain sensor,based on an in-line Mach-Zehnder interferometer,is fabricated by concatenating two waist-enlarged fiber tapers separated by a short piece of photonic crystal fiber. The interference spectrum of the proposed sensor is analyzed in detail.Experimental results demonstrate that this sensor has a strain sensitivity of.3.02 pm/μεand maintains the temperature insensitivity feature. The proposed sensor has great potential in diverse sensing applications due to its advantages,such as its compact size,low cost,and simple fabrication process.     

Experimental investigation on a software synchronous optical sampling technique based on periodically poled lithium niobate

A software synchronous optical sampling system is constructed based on sum frequency generation (SFG) in periodically poled lithium niobate (PPLN). Five gigahertz of a non-return-to-zero (NRZ) data signal is sampled by sampling pulse with the repetition frequency of 29.31 MHz. The power of the SFG light is set at 23 dBm, and an eye diagram is successfully recovered. A band-pass filter is added before the sampling pulse is subjected to erbium-doped fiber amplifier to reduce gain competition and ensure a high power level of SFG.     

Room-temperature direct-bandgap photoluminescence from strain-compensated Ge/SiGe multiple quantum wells on silicon

Strain-compensated Ge/Si_0.15Ge_0.85 multiple quantum wells were grown on an Si_0.1>Ge_0.9 virtual substrate using ultrahigh vacuum chemical vapor deposition technology on an n⁺-Si(001) substrate. Photoluminescence measurements were performed at room temperature, and the quantum confinement effect of the direct-bandgap transitions of a Ge quantum well was observed, which is in good agreement with the calculated results. The luminescence mechanism was discussed by recombination rate analysis and the temperature dependence of the luminescence spectrum.     

物理美学对物理教学的意义

在实施新课程改革的大背景下,运用理论与实践相结合的方法就物理美学对物理教学的意义做了论述,以引起同行们对物理美学研究及其应用的关注．     

Improved interframe registration based nonuniformity correction for focal plane arrays

In this paper, an improved interframe registration based nonuniformity correction algorithm for focal plane arrays is proposed. The method simultaneously estimates detector parameters and carries out the nonuniformity correction by minimizing the mean square error between the two properly registered image frames. A new masked phase correlation algorithm is introduced to obtain reliable shift estimates in the presence of fixed pattern noise. The use of an outliers exclusion scheme, together with a variable step size strategy, could not only promote the correction precision considerably, but also eliminate ghosting artifacts effectively. The performance of the proposed algorithm is evaluated with clean infrared image sequences with simulated nonuniformity and real pattern noise. We also apply the method to a real-time imaging system to show how effective it is in reducing noise and the ghosting artifacts.     

Effect of sputtering power on surface topography of dc magnetron sputtered Ti thin films observed by AFM

Titanium films were deposited on glass substrates at room temperature by direct current (dc) magnetron sputtering at fixed Ar pressure of 1.7 Pa and sputtering time of 4 min with different sputtering power ranging from 100 to 300 W. Atomic force microscopy (AFM) was used to study topographic characteristics of the films, including crystalline feature, grain size, clustering and roughening. The amorphous-like microstructure feature has been observed at 100-150 W and the transition of crystal microstructure from amorphous-like to crystalline state occurs at 200 W. The increase in grain size of Ti films with the sputtering power (from 200 to 300 W) has been confirmed by AFM characterization. In addition, higher sputtering power (300 W) leads to the transformation of crystal texture from globular-like to hexagonal type. The study has shown that higher sputtering power results in the non-linear increase in deposition rate of Ti films. Good correlativity between the surface roughness parameters including root mean square (RMS) roughness, surface mean height (Ra) and maximum peak to valley height (P-V) for evaluating the lateral feature of the films has been manifested. Surface roughness has an increasing trend at 100-250 W, and then drops up to 300 W.     

532-nm picosecond pulse generated in a passively mode-locked Nd:YVO_4 laser

A diode-pumped continuous-wave （CW） mode-locked Nd：YVO4/KTP green laser with semiconductor saturable absorber mirror （SESAM） is demonstrated. The maximum output power of CW mode-locked green laser is obtained to be 552 mW at the incident pump power of 7.25 W, corresponding to an opticai-optical conversion efficiency of about 7.6%. The 532-nm CW mode-locked pulse duration is estimated to be about 8.4 ps with the repetition rate of 87 MHz.     

A comparison of silicon oxide and nitride as host matrices on the photoluminescence from Er+ ions

This paper compares the properties of silicon oxide and nitride as host matrices for Er ions.Erbium-doped silicon nitride films were deposited by a plasma-enhanced chemical-vapour deposition system.After deposition,the films were implanted with Er3+ at different doses.Er-doped thermal grown silicon oxide films were prepared at the same time as references.Photoluminescence features of Er3+ were inspected systematically.It is found that silicon nitride films are suitable for high concentration doping and the thermal quenching effect is not severe.However,a very high annealing temperature up to 1200° C is needed to optically activate Er3+,which may be the main obstacle to impede the application of Er-doped silicon nitride.