ANALYSIS OF LASING PERFORMANCES OF Yb3+-DOPED YAG, FAP, KYW CRYSTALS

The Yb³⁺ laser emitting at a 1.03μm wavelength has been evoking strong interest recently due to its advantages of long fluorescence lifetime, broad absorption band and the fact that it never shows concentration quenching. On the other hand, as a laser of three-level system it has, in general, a relatively high threshold power, which makes it important to seek some suitable host crystals to reduce this. Here, we present a comparison of the lasing performances of Yb³⁺-doped YAG [Y₃Al₅O₁₂], FAP [Ca₅(PO₄)₃F] and KYW [KY(WO₄)₂] crystals, including threshold power and slope efficiency, with those of the Nd:YAG laser based on the threshold formula of three-and four-level systems deduced by the authors. The results show that the Yb³⁺ laser can output a power larger than the Nd:YAG laser does in the case of comparably higher pumping power, if the length of the lasing rod and the concentration of the active ions satisfy some conditions. The theoretical results are also close to the experimental results reported.     

磁流变减振器控制研究

从混合工作模式推导出了磁流变减振器的阻尼力与控制电流之间的关系,并以此为依据设计出磁流变减振器的控制器,经实验测试控制器具有响应速度快、输出精度高等特点,对磁流变减振器的控制效果令人满意。     

多极板电流变阀应用于避震器之研究

以流动模式（flow mode)多极板之电流变阀（electrorheological valve)进行避震器阻尼力特性的研究。由于电极板的大小直接影响到流体流动的剪力及避雷器的阻尼力,因此使用多极板型式来探讨避震器的特性。设计有1－5个流道之并联及1－3个流道之串联多极板电流变阀的电流变避震器,并使用自制的电流变液进行实验。由研究结果显示,流动式并联极板之电流变避震器,一个流道之阻尼力最大,流道极板增加则阻尼力反而下降,而流动式串联多极板之电流变避震器之阻尼力则随极板数递增,故需要高阻尼力之避震器较适合使用串联多极板型式。     

Using a water-confined carbon nanotube to probe the electricity of sequential charged segments of macromolecules

The detection of macromolecular conformation is particularly important in many physical and biological applications. Here we theoretically explore a method for achieving this detection by probing the electricity of sequential charged segments of macromolecules. Our analysis is based on molecular dynamics simulations, and we investigate a single file of water molecules confined in a half-capped single-walled carbon nanotube (SWCNT) with an external electric charge of +e or -e (e is the elementary charge). The charge is located in the vicinity of the cap of the SWCNT and along the centerline of the SWCNT. We reveal the picosecond timescale for the re-orientation (namely, from one unidirectional direction to the other) of the water molecules in response to a switch in the charge signal, -e → +e or +e →-e. Our results are well understood by taking into account the electrical interactions between the water molecules and between the water molecules and the external charge. Because such signals of re-orientation can be magnified and transported according to Tu et al. [2009 Proc. Natl. Acad. Sci. USA 106 18120], it becomes possible to record fingerprints of electric signals arising from sequential charged segments of a macromolecule, which are expected to be useful for recognizing the conformations of some particular macromolecules.     

一种实现光子晶体波导定向耦合型多路光均分的新方法

将多光子晶体单模波导平行、邻近放置构成定向耦合器. 依据自映像原理,数值分析了输入光场对称入射时,该系统中光的传播行为. 基于此结构,以三、四通道为例,设计了超微多路光分束器,并仅通过对称地改变耦合区中两个介质柱的有效折射率,使光场在横向发生重新分布,实现了输出能量的均分或自由分配. 和已报道结果相比,此调制方法更为简单易行而且效率更高,并可以推广到具有更多输出通道的光分束器中,在未来的集成光回路中具有广泛的应用价值. 关键词： 光子晶体波导 定向耦合器 分束器 能量均分     

基于半导体光放大器的一阶IIR微波光子学滤波器及其品质因素分析

对基于半导体光放大器(SOA)环形腔结构的一阶无限冲击响应(IIR)微波光子学滤波器的品质因数(Q值)进行了实验和理论研究. 通过在有源环内置入窄带光滤波器,并调节有源环的输入光功率、SOA抽运电流、实验得到的最高Q值接近200. 理论分析表明为了得到较高的Q值,应尽可能提高信噪比和信号光的环路增益. 在考虑了 SOA中放大的自发辐射(ASE)噪声的基础上,计算了输入光功率、SOA抽运电流、环内光滤波器的带宽对Q值的影响. 数值计算的结果与实验现象基 关键词： 微波光子学滤波器 Q值')" href="#">Q值 半导体光放大器 放大的自发辐射     

信号灯和公交车站对T形路口交通流的影响研究

采用非线性映射模型研究T形路口的交通问题,利用点平均流量指标系统地分析了公交车站、信号灯周期、绿信比、车辆左右转弯等因素对路径交通流量的影响.数值模拟结果表明,信号灯和公交车站之间的相互影响容易导致交通流的串现象,不同路径上的流量与信号灯周期、绿信比和公交车站位置之间存在一定的关系. 关键词： 交通流 非线性映射模型 信号控制 串     

Thermal annealing behaviour of Al/Ni/Au multilayer on n-GaN Schottky contacts

Recently GaN-based high electron mobility transistors (HEMTs) have revealed the superior properties of a high breakdown field and high electron saturation velocity. Reduction of the gate leakage current is one of the key issues to be solved for their further improvement. This paper reports that an Al layer as thin as 3 nm was inserted between the conventional Ni/Au Schottky contact and n-GaN epilayers, and the Schottky behaviour of Al/Ni/Au contact was investigated under various annealing conditions by current--voltage (I--V) measurements. A non-linear fitting method was used to extract the contact parameters from the I--V characteristic curves. Experimental results indicate that reduction of the gate leakage current by as much as four orders of magnitude was successfully recorded by thermal annealing. And high quality Schottky contact with a barrier height of 0.875 eV and the lowest reverse-bias leakage current, respectively, can be obtained under 12 min annealing at 450°C in N₂ ambience.     

半导体光放大器超快折射率变化动态特性的研究

建立了分析半导体光放大器（SOA）飞秒量级超快动态特性的数值模型,考虑了增益色散以及群速度色散,能更精确地反映飞秒级超短脉冲经过SOA时的传输特性.基于该模型,可以分析由载流子密度脉动以及载流子加热对折射率变化的影响.同时,也考虑了不同的工作条件以及SOA的结构参数对折射率的影响.理论分析和模拟实验为优化SOA的结构、改善SOA飞秒量级超高速动态特性提供了理论指导. 关键词： 半导体光放大器 折射率动态特性 增益色散 群速度色散     

Numerical study of optical properties of InGaN multi-quantum-well laser diodes with polarization-matched AlInGaN barrier layers

The optical properties of InGaN multi-quantum-well laser diodes with different polarization-matched AlInGaN barrier layers have been investigated numerically by employing an advanced device simulation program. The use of quaternary polarization-matched AlInGaN barrier layers enhances the electron–hole wave function overlap due to the compensation of polarization charges between InGaN quantum well and AlInGaN barrier layer. According to the simulation results, it is found that, among the polarization-matched quantum-well structures under study, lower threshold current and higher slope efficiency can be achieved simultaneously when the aluminum composition in AlInGaN barrier layers is about 10–15%. The optimal polarization-matched InGaN/AlInGaN laser diode shows lower threshold current and higher slope efficiency compared to conventional InGaN/InGaN laser diodes.