Separation of copper(II) from uranium(VI) and many other elements by cation-exchange chromatography in acetone-hydrobromic acid media: Improved selective separation of copper

Co(II), Ni(II), Mn(II), Li, Na, K, Rb, Cs, Be, Mg, Ca, Sr, Ba, Ti(IV), V(IV), Zr, Hf, Th, Al, Sc, Y, La, the lanthanides and also U(VI), which accompany copper(II) in hydrochloric acid-acetone mixtures, can be separated from copper by eluting copper(II) with 0.50 M hydrobromic acid in 85% acetone from a column of AG 50W-X8 resin, 200–400 mesh, while all these elements are retained by the column quantitatively. Separations are sharp and quantitative, as is demonstrated by results for some synthetic mixtures. Some relevant elution curves are presented.     

Hyperfine fields at surfaces and interfaces

Magnetism and hyperfine fields at transition metal surfaces are discussed using state-of-the-art local spin density methods. Emphasis is placed on recent results obtained for the Fe(001), Ni(001), Cr(001) and Ag/Fe(001) ferromagnetic surfaces, and for the Knight shift in Pt(001).     

Synthesis and structures of an unusual germanium(II) calix[4]arene complex and the first germanium(II) calix[8]arene complex and their reactivity with diiron nonacarbonyl

The protonolysis reaction of the germanium(II) amide Ge[N(SiMe3)2]2 with calix[4]arene and calix[8]arene furnishes the two germanium(II) calixarene complexes {calix[4]}Ge2 and {calix[8]}Ge4, respectively, which have been crystallographically characterized. The calix[4]arene complex contains a Ge2O2 rhombus at the center of the molecule and is one of the only four germanium(II) calix[4]arenes that have been structurally characterized. The calix[8]arene species is the first reported germanium calix[8]arene complex, and it exhibits an overall bowl-shaped structure which contains two Ge2O2 fragments. The latter complex reacts with Fe2(CO)9 to yield an octairon compound, which has also been structurally characterized and contains four GeFe2 triangles arranged around the macrocyclic ring. The germanium(II) centers are oxidized to germanium(IV) in this process, with concomitant reduction of the neutral diiron species to Fe2(CO)(8)2- anions.     

Ionic‐Radius‐Driven Selection of the Main‐Group‐Metal Cage for Intermetalloid Clusters [Ln@PbxBi14−x]q− and [Ln@PbyBi13−y]q− (x/q=7/4, 6/3; y/q=4/4, 3/3)

Reactions of the binary, pseudo‐homoatomic Zintl anion (Pb₂Bi₂)^2? with Ln(C₅Me₄H)₃ (Ln=La, Ce, Nd, Gd, Sm, Tb) in the presence of [2.2.2]crypt in ethane‐1,2‐diamine/toluene yielded ten [K([2.2.2]crypt)]⁺ salts of lanthanide‐doped semimetal clusters with 13 or 14 surface atoms. Single‐crystal X‐ray diffraction and energy‐dispersive X‐ray spectroscopy indicated the presence of the anions [Ln@Pb₆Bi₈]^3?, [Ln@Pb₃Bi₁₀]^3?, [Ln@Pb₇Bi₇]^4?, or [Ln@Pb₄Bi₉]^4? in single or double salts; the latter showed various ratios of the components in the solid state. The anions are the first ternary intermetalloid clusters comprising only elements of the sixth period of the periodic table, namely, Pb, Bi and lanthanides. This study, which was complemented by ESI mass spectrometry and ¹³⁹La NMR spectroscopy in solution, rationalizes a continuous development of the ratio of 13:14‐atom cages with the ionic radius of the embedded Ln³⁺ ion, which seems to select the most suitable cage type. Quantum chemical investigations helped to analyze this situation in more detail and to explain the observed subtle influence of the atomic radii. Magnetic measurements confirmed that the embedded Ln³⁺ ions keep their expected paramagnetic or diamagnetic nature.     

Absorption,electrochemical, theoretical,and 73Ge NMR spectral characterization of the germanium neo-pentane analogue (Me3Ge)4Ge

The germanium-based neo-pentane analogue (Me₃Ge)₄Ge has been characterized by UV/visible spectroscopy, cyclic voltammetry, and ⁷³Ge NMR spectroscopy as well as by density functional theory (DFT) calculations. The absorption maximum for (Me₃Ge)₄Ge is blue-shifted relative to those for other related branched oligogermanes (Ph₃Ge)₃GeH and (Ph₃Ge)₃GePh, and this species is also the most difficult to oxidize among these three compounds. DFT calculations indicate the HOMO of (Me₃Ge)₄Ge is stabilized relative to those for both tetragermanes by ca. 0.5 eV and therefore the theoretical and experimental results are in agreement. The ⁷³Ge NMR spectrum of (Me₃Ge)₄Ge exhibits two resonances and the feature corresponding to the central formally zero-valent germanium atom is shifted far upfield and was observed at δ ?339 ppm.     

The enthalpy of formation of 2II CH

The standard enthalpy of formation, δ_fH^o, of² II CH has been determined at converged levels of ab initio electronic structure theory, including high order coupled cluster and full configuration interaction benchmarks. The atomic Gaussian basis sets employed include the (aug)-cc-p(C)VXZ family with X = 3, 4, 5 and 6. Extrapolations to the complete one-particle basis set and the full configuration interaction limits, where appropriate, have been performed to reduce remaining computational errors. Additional improvements in the enthalpy of formation of ²II CH were achieved by appending the valence-only treatment with core-valence correlation, relativistic effects including spin-orbit correlation, and the diagonal Born-Oppenheimer correction. The recommended values for δfH^o ₀ and δA_f H _o ²⁹⁸ of ²II CH are 592.48^+0.47 _?0.56 kJ mol_?1 and 595.93 ^+0.47 _?0.56 kJ mol_?1, respectively.     

Influence of self-assembled monolayer chain length on modified gate dielectric pentacene thin-film transistors

Self-assembled monolayers are widely used to modify the gate dielectric/semiconductor interface in organic thin-film transistors. By modifying the interaction between the molecular semiconductor and the substrate, thin-film ordering and the electronic properties of the semiconducting channel can be controlled. The modified semiconductor/dielectric properties result in macroscopically observed changes in the charge-carrier mobilities, threshold voltages, subthreshold swing and transfer characteristic hysteresis. The latter two are determined by the density of charge-trapping states at the interface. Here, we investigate the influence of the thickness of the self-assembled monolayer, via the alkyl chain length in n-alkyl phosphonic acid-based monolayers on SiO₂, on the electronic properties of pentacene-based organic thin-film transistors. Rather than a monotonic increase or decrease in performance with increasing chain length, we have found that the optimum performance occurs with chains of 8–10 carbon atoms. Atomic force microscopy shows a correlation between pentacene crystalline grain size and transistor performance.