Wavelength-tunable organic solid-state distributed-feedback laser

We report on a wavelength-tunable organic solid-state laser based on a second-order distributed-feedback (DFB) resonator design with the guest–host system Alq₃:DCM2 as the gain medium. The laser wavelength can be shifted from 608.9 to 646.5 nm by varying the grating period of the Bragg reflector. This allows the characterization of laser parameters for a large wavelength region on a single sample. The laser threshold and output characteristics are measured for different laser wavelengths. A minimum threshold for laser activity occurs at a lasing wavelength of 633 nm, giving the spectral position of the gain maximum. PACS 42.70.Jk; 78.45.+h; 78.66.Qn     

Carrier cooling and recombination heating in intermixed GaAs/AlGaAs quantum wires and dots

Il Nuovo Cimento D - The cooling of photoexcited hot carriers in 2D, 1D and 0D systems is studied experimentally. In comparison with a theoretical carrier relaxation model which holds for 2D and 1D...     

A laser dry etch process for smooth continuous relief structures in InP

A laser induced etch process is described which uses a pulsed 248 nm KrF excimer laser and Cl₂ atmosphere for the fabrication of monolithic continuously curved reliefs in InP substrate. In a bakeable processing chamber with low base pressure a wide range of laser fluences is available for damage-free etching. Especially, by photothermal heating far above the melting point, mirrorlike smooth surfaces are obtained. The etch rate characteristics are correlated to the maximum surface temperature reached during the laser pulse. The etch rate is independent of pressure and gas flux in the ranges 0.1–10 mbar and 20–300 sccm, respectively. It increases, however, with the background substrate temperature. Etch rates of up to 3.6 nm/pulse or 4.3 lm/min are possible at 20 Hz pulse repetition rate without visible surface damage. The process exhibits a smooth increase of the etch rate from 1 to 3 nm/pulse between 200 and 300 mJ/cm², which could be used for making curved reliefs by optical transmission variations on the projection mask.     

Synthesis and characterization of poly(vinylcyclohexane) derivatives

Six nearly monodisperse substituted poly(styrene) homopolymers, poly(styrene) (PS), poly(2-methylstyrene) (P2MS), poly(3-methylstyrene) (P3MS), poly(4-methylstyrene) (P4MS), poly(tertiary-butylstyrene) (PtBS), and poly(α-methylstyrene) (FαMS) were anionically polymerized and subsequently saturated using heterogeneous hydrogenation techniques to poly(vinylcyclohexane) (PVCH), poly(2-methylvinylcyclohexane) (P2MVCH), poly(3-methylvinylcyclohexane) (P3MVCH), poly(4-methylvinylcyclohexane) (P4MVCH), and poly(tertiary-butylvinylcyclohexane) (PtBVCH), respectively. In each case, except PαMS, the materials were saturated to > 99% conversion with no chain degradation. PS hydrogenations required the addition of small amounts of tetrahydrofuran to the reaction solvent cyclohexane to enhance miscibility and eliminate large-scale chain degradation. Density gradient and differential scanning calorimetry (DSC) measurements were used to characterize the density and glass transition temperature, T_g, of the unsaturated and saturated polymers. Saturation reduces the density by 3% to 11% and changes T_g substantially. The greatest variation in T_g is obtained with the 3-methyl substituted species where a 63°C increase is observed, while the highest measured T_g is 186°C for P2MVCH. Small-angle neutron scattering (SANS) experiments on binary mixtures of hydrogenous and deuterium labeled PVCH derivatives provided a determination of bulk chain statistics. The statistical segment length is relatively insensitive to vinylcyclohexane ring substitution, except with P3MVCH where a 20% greater value is obtained. ©1995 John Wiley & Sons, Inc.     

Dimethyl(tetramethylcyclopentadienyl)silyl-, -germyl- und -stannyl-phosphane. Röntgenstrukturanalyse von Chloro(dimethyl)tetramethylcyclopentadienylstannan und Tetracarbonyl[1-dimethyl-(tetramethylcyclopentadienyl)germyl-3,4-dimethylphospholen]eisen(0)

Dimethyl(tetramethylcyclopentadienyl)silyl-, -germyl-, and -stannylphosphanes. X-Ray Structures of Chloro(dimethyl)tetramethylcyclopentadienyl-stannane and Tetracarbonyl[1-dimethyl(tetramethylcyclopentadienyl)germyl-3,4-dimethyl-phospholene]iron(0) Me₂Cp′SiCl ( 1 ) (Cp′ = C₅HMe₄) reacts with magnesium and R₂PCl (R = Ph, ^tBu) as well as PCl₃ in tetrahydrofurane yielding Me₂Cp′SiPPh₂ ( 4 ), Me₂Cp′SiP^tBu₂ ( 5 ) and (Me₂Cp′Si)₃P ( 6 ) respectively. The reaction of Me₃SiPPh₂ ( 7 ) or Me₃SiPC₄H₄Me₂ ( 10 ) with Me₂Cp′GeCl ( 2 ) and Me₂Cp′SnCl ( 3 ) leads to the formation of Me₂Cp′EPPh₂ (E = Ge ( 8 ), Sn ( 9 )) and Me₂Cp′EPC₄H₄Me₂ (E = Ge ( 11 ), Sn ( 12 )). 11 reacts with Fe(CO)₅ with formation of Fe(CO)₄[(PC₄H₄Me₂)GeCp′Me₂] ( 13 ). 3 crystallizes in the space group P2₁/n with a = 986,7(1), b = 1247,3(2), c = 1028,2(1) pm, β = 92,71(1)°, Z = 4 and V = 1264,1(2) 10^?30 m³. The final refinement resulted in R₁ = 0,0249 for 2097 observed reflexions with F_o ≥ 4σ(F_o). 13 crystallizes in the space group P2₁/n with a = 967,7(3), b = 1298,70(16), c = 1832,7(3) pm, β = 95,810(19)°, Z = 4 and V = 2291,4(8) 10^?30 m³ (R₁ = 0,0444 for 4043 observed reflexions with F_o ≥ 4σ(F_o). 13 forms a trigonal bipyramide with the phosphane ligand 11 in an axial position.