介质阻挡放电系统中超四边形斑图形成的实验研究

采用水电极介质阻挡放电装置,在氩气和空气的混合气体放电中,对超四边形斑图的形成进行了实验研究.发现随着外加电压的升高,斑图类型经历了四边形斑图、准超点阵斑图、超四边形斑图、条纹斑图或六边形斑图的演化顺序.对这些斑图进行了傅里叶谱分析,得到了空间模式随电压的变化关系.此外,在外加电压升高的过程中,出现了具有不同空间尺度的两种超四边形斑图,它们满足不同的驻波条件.分析了壁电荷在超四边形斑图形成中的作用.实验测量了斑图类型随气隙间距和外加电压变化的相图以及超四边形斑图随气隙间距和气隙气压变化的相图.测量了击穿电 关键词： 介质阻挡放电 斑图 壁电荷 放电参量     

Synthesis,Characterization and Crystal Structure Determination of a Thiocyanato Bridged One-dimensional Polymeric Complex of Cadmium（Ⅱ）

A new one-dimensional polymeric complex [Cd（SCN）2（H2O）]L （L = N,N′-bis（furan- 2-ylmethylene）hydrazine） has been synthesized and characterized by IR, UV spectra, TG-DTA technique and single-crystal X-ray diffraction analysis. It crystallizes in triclinic, pace group P1^- with a = 5.9268（8）, b = 10.8678（15）, c = 13.3671（19） A, α = 109.295（2）, β = 95.092（2）, γ = 97.8580（10）°, V = 796.70（19）A^3, Z = 2, C12H10CdN4O3S2, Mr = 434.76, μ = 1.648 mm^-1, Dc = 1.812 g/cm^3, F（000） = 428, R = 0.0308 and wR = 0.0769. The crystal structure reveals that the structure of [Cd（SCN）2（H2O）]n features di-μ-1,3-thiocyante bridges and 1D chains. The octahedrally coordinated Cd atom is surrounded by one oxygen atom from water molecule, three S atoms and two N atoms from five di-μ-1,3 thiocyanato bridges. The Cd atoms are connected by two di-μ-1,3 thiocyanato bridges with the Cd（1）…Cd（1A） separation of 4.239（1） A and Cd（1）...Cd（1B） of 5.852（1）/~. In addition, the one-dimensional straight chain structure is further connected by multiform intermolecular N-H…O hydrogen bonds and π-π interactions to form a three-dimensional supramolecular structure.     

Li3N-hBN体系中引入调节剂对合成cBN的影响

引入调节剂是一种改善立方氮化硼生长环境的重要手段. 本文中,我们研究了在Li3NhBN体系中引入调节剂对合成立方氮化硼的影响. 研究发现,调节剂的引入对立方氮化硼成核有明显的影响,并且通过光学显微镜可以明显发现调节剂曾有溶融的迹象,认为是调节剂在高温高压下发生溶解,改变了立方氮化硼生长溶液的性质,为立方氮化硼的生长提供了良好的生长环境,改变了立方氮化硼的生长速度,使晶体形貌得到了明显的改善. 通过电镜分析,发现调节剂含量的不同给晶体带来了不同的缺陷.     

氩气/空气介质阻挡放电自组织超六边形斑图实验研究

采用双水电极介质阻挡放电装置,在氩气/空气混合气体放电中,在三种边界条件下得到了一种新型的超六边形斑图.给出了超六边形斑图的傅里叶变换及其不同模强度随旋转角的变化.实验测量了超六边形斑图随空气含量和外加电压变化的相图.研究了超六边形斑图的时空动力学,发现超六边形斑图是由两套子结构嵌套而成.在四边形边界条件下,研究了放电面积的大小对斑图模式选择的影响.发现超四边形斑图的形成受边界条件影响很大,而超六边形斑图则是自组织的结果. 关键词： 介质阻挡放电 超六边形斑图 时空动力学 边界条件     

Disentangling the Effects of Thickness of the Neutron Skin and Symmetry Potential in Nucleon Induced Reactions on Sn Isotopes

The effects of density dependence of symmetry energy and the thickness of the neutron skin in proton （neutron） induced reactions on Sn isotopes are investigated by means of the improved molecular dynamics model. The investigation shows that the target size dependence of the reaction cross sections for proton induced reactions on Sn isotopes is sensitive to the density dependence of the symmetry energy and less sensitive to the thickness of the neutron skin of the target nuclei, but that, for neutron induced reactions on Sn isotopes, it is less sensitive to the density dependence of the symmetry energy and sensitive to the thickness of the neutron skin of the target nucleus.     

Structural Feature and Solute Trapping of Rapidly Grown Ni3Sn Intermetallic Compound

The rapid dendritic growth of primary Ni3Sn phase in undercooled Ni-30.9%Sn-5%Ge alloy is investigated by using the glass fluxing technique. The dendritic growth velocity of Ni3Sn compound is measured as a function of undercooling, and a velocity of 2.47m/s is achieved at the maximum undercooling of 251 K （0.17TL）. The addition of the Ge element reduces its growth velocity as compared with the binary Ni75Sn25 alloy. During rapid solidification, the Ni3Sn compound behaves like a normal solid solution and it displays a morphological transition of ＂coarse dendrite-equiaxed grain-vermicular structure＂ with the increase of undereooling. Significant solute trapping of Ge atoms occurs in the whole undercooling range.     

含氢添加剂对合成cBN的影响及腔体温度分布

 通过对Li基触媒下立方氮化硼的高温高压合成实验结果的分析,研究了在Li基触媒作为主要触媒及氢化物作为添加剂的环境下,立方氮化硼的生长情况。同时由合成后样品中立方氮化硼的生成区域对V型生长区温度梯度分布进行了分析讨论。     

新型多巴胺D3受体抑制剂的发现

根据最新解析的多巴胺D3受体的晶体结构进行活性位点分析, 建立了基于受体的药效团模型, 并对Asinex Gold Collection 数据库进行筛选, 选择7个化合物进行生物活性测试, 得到了高活性新型多巴胺受体抑制剂(04932482), 它对多巴胺D3受体抑制率达85.45%, 其Ki值为(806.75±34.58) nmol/L. 进一步对活性化合物进行结构分析, 研究了其与受体相互作用的模式, 并以此为指导提出以04932482为先导化合物进行结构改造的方向.     

基于BiFeO_3/ITO复合膜表面钝化的黑硅太阳电池性能研究

采用金属银辅助化学刻蚀法在制绒的硅片表面刻蚀纳米孔形成微纳米双层结构,以期获得高吸收率的太阳能电池用黑硅材料.鉴于微纳米结构会在晶硅表面引入大量的载流子复合中心,利用磁控溅射技术在黑硅太阳电池表面制备了BiFeO_3/ITO复合膜,并对其表面性能和优化效果进行了探索.实验制备的具有微纳米双层结构的黑硅纳米线长约180—320 nm,在300—1000 nm波长范围内入射光反射率均在5%以下.沉积BiFeO_3/ITO复合薄膜后的黑硅太阳能电池反射率略有提高,但仍然具有较强的光吸收性能;采用BiFeO_3/ITO复合膜的黑硅太阳能电池开路电压和短路电流密度分别由最初的0.61 V和28.42 mA/cm~2提升至0.68 V和34.57 mA/cm~2,相应电池的光电转化效率由13.3%上升至16.8%.电池综合性能的改善主要是因为沉积BiFeO_3/ITO复合膜提高了电池光生载流子的有效分离,从而增强了黑硅太阳电池短波区域的光谱响应,表明具有自发极化性能的BiFeO_3薄膜对黑硅太阳能电池的表面性能可起到较好的优化作用.     

Chemical mechanical planarization of Ge_2Sb_2Te_5 using IC1010 and Politex reg pads in acidic slurry

In the paper, chemical mechanical planarization(CMP) of Ge2Sb2Te5(GST) is investigated using IC1010 and Politex reg pads in acidic slurry. For the CMP with blank wafer, it is found that the removal rate(RR) of GST increases with the increase of pressure for both pads, but the RR of GST polished using IC1010 is far more than that of Politex reg. To check the surface defects, GST film is observed with an optical microscope(OM) and scanning electron microscope(SEM). For the CMP with Politex reg, many spots are observed on the surface of the blank wafer with OM, but no obvious spots are observed with SEM. With regard to the patterned wafer, a few stains are observed on the GST cell, but many residues are found on other area with OM. However, from SEM results, a few residues are observed on the GST cell, more dielectric loss is revealed about the trench structure. For the CMP with IC1010, the surface of the polished blank wafer suffers serious scratches found with both OM and SEM, which may result from a low hardness of GST, compared with those of IC1010 and abrasives. With regard to the patterned wafer, it can achieve a clean surface and almost no scratches are observed with OM, which may result from the high-hardness SiO2 film on the surface, not from the soft GST film across the whole wafer. From the SEM results, a clean interface and no residues are observed on the GST surface, and less dielectric loss is revealed. Compared with Politex reg, the patterned wafer can achieve a good performance after CMP using IC1010.