Embedding of Dynamical Symmetry Groups U(1, 1) and U(2) of a Free Particle on AdS 2 and S 2 into Parasupersymmetry Algebra

Using two different types of the laddering equations realized simultaneously by the associated Gegenbauer functions, we show that all quantum states corresponding to the motion of a free particle on AdS ₂ and S ² are splitted into infinite direct sums of infinite-and finite-dimensional Hilbert subspaces which represent Lie algebras u(1, 1) and u(2) with infinite- and finite-fold degeneracies, respectively. In addition, it is shown that the representation bases of Lie algebras with rank 1, i.e., gl(2, C), realize the representation of nonunitary parasupersymmetry algebra of arbitrary order. The realization of the representation of parasupersymmetry algebra by the Hilbert subspaces which describe the motion of a free particle on AdS ₂ and S ² with the dynamical symmetry groups U(1, 1) and U(2) are concluded as well.     

Capacity Constrained Transit Assignment with Common Lines

This paper proposes the use of absorbing Markov chains to solve the capacity constrained transit network loading problem taking common lines into account. The approach handles congested transit networks, where some passengers will not be able to board because of the absence of sufficient space. The model also handles the common lines problem, where choice of route depends on frequency of arrivals. The mathematical formulation of the problem is presented together with a numerical example. This revised version was published online in July 2006 with corrections to the Cover Date.     

Dynamics in molecular crystals: An application of proton NMR to selectively protonated biphenyl. Do the rings flip together or independently?

The synthesis of a specific isotopomer, C₆D₄H(ortho)-H(ortho)D₄C₆ of biphenyl is reported. The intramolecular dipolar coupling of the protons leads to a well-resolved single-crystal proton nuclear magnetic resonance (NMR) spectrum and allows one to study the dynamics of the phenyl rings in a unique way. At room temperature and above, the most conspicuous dynamical mode consists of 180° ring flips. The present data together with previous measurements of the total flip rate allow us to conclude that the rings flip almost exclusively independently of each other. Between the incommensurate (IC) phase transition of biphenyl at 38 K andT=250 K, the prominent namical mode consists of oscillatory twists ϕ(t) of the two rings. The data allow us to infer the mean square, (φ²), of these twists. (φ²) is found to grow linearly withT for 50<T<200 K. From the slope of (φ²) vs.T the frequency (the wave number[(v)\tilde]\tilde v) is derived. The result is[(v)\tilde] = 20\tilde v = 20 cm⁻¹. ForT<38 K, the spectra give direct evidence of the IC phase transition and its nature (stripelike rather than quiltlike). The temperature dependence of the magnitude of the order parameter of the IC phase is obtained.     

Vibration analysis of planar serial-frame structures

A hybrid analytical/numerical method is proposed that permits the efficient dynamic analysis of planar serial-frame structures. The method utilizes a numerical implementation of a transfer matrix solution to the equation of motion. By analyzing the transverse and longitudinal motions of each segment simultaneously and considering the compatibility requirements across each frame angle, the undetermined variables of the entire frame structure system can be reduced to six which can be determined by application of the boundary conditions. The main feature of this method is to decrease the dimensions of the matrix involved in the finite element methods and certain other analytical methods.     

Ultrafast carrier dynamics in ferromagnetic InGaMnAs

We have carried out an ultrafast time-resolved differential reflectivity study of a ferromagnetic semiconductor InGaMnAs and made a systematic comparison with low-temperature grown and high-temperature grown InGaAs reference films. Very short carrier lifetimes (2 ps) were observed in InGaMnAs and the low-temperature grown InGaAs film, but not in the high-temperature grown InGaAs film. We attribute the short lifetimes to carrier trapping by mid-gap states introduced during low-temperature MBE growth. Furthermore, at long times, we observed periodic oscillations in the differential reflectivity signal with period 20 ps, which we interpret as coherent acoustic phonons.     

InAs/GaAs (1 1 1)A heteroepitaxial systems

We studied the structural, electrical, and mechanical properties of an InAs thin film grown on GaAs (1 1 1)A substrates by molecular beam epitaxy. In contrast to conventionally used (0 0 1) surfaces, where Stranski–Krastanov growth dominates the highly mismatched heteroepitaxy, layer-by-layer growth of InAs can be established. One of the largest advantages of this unique heteroepitaxial system is that it provides a two-dimensional electron gas system in the near-surface region without the problem of electron depletion. We review the fundamental properties and applications of this unique heteroepitaxial system.     

Charge manipulation and imaging of the Mn acceptor state in GaAs by cross-sectional scanning tunneling microscopy

An individual Mn acceptor in GaAs is mapped by cross-sectional scanning tunneling microscopy (X-STM) at room temperature and a strongly anisotropic shape of the acceptor state is observed. An acceptor state manifests itself as a cross-like feature which we attribute to a valence hole weakly bound to the Mn ion forming the (Mn²⁺3d⁵+hole) complex. We propose that the observed anisotropy of the Mn acceptor wavefunction is due to the d-wave present in the acceptor ground state.     

Weighted oscillator strengths and lifetimes for the S IX and S X spectra

The weighted oscillator strengths (gf) and the lifetimes presented in this work were carried out in a multi configuration Hartree-Fock relativistic (HFR) approach. In this calculation, the electrostatic parameters were optimized by a least-squares procedure, in order to improve the adjustment to experimental energy levels. This method produces gf-values that are in better agreement with intensity observations and lifetime values that are closer to the experimental ones. In this work, we presented all the experimentally known electric dipole S IX and S X spectral lines.