基于非线性光纤环形镜的少模脉冲幅度调制再生器

随着网络带宽需求的快速增加,波分复用系统的容量已接近非线性香农极限.为了适应未来网络的发展,空分复用技术引起了越来越多的关注.本文首次提出基于少模非线性光纤环形镜(FM-NOLM)的脉冲幅度调制(PAM)全光再生器,描述了其工作原理和具体设计过程.采用COMSOL软件对组成FM-NOLM的硫化物高非线性光纤进行了模式特性仿真.以LP01,LP11,LP21三个光纤模式为例,确定了再生器的参数,计算出每个模式的功率转移函数曲线.仿真分析了该少模PAM-4全光再生器的噪声抑制(NRR)性能,并与单模情形进行了比较.研究表明,1)对于每个空间模式的PAM信号,所有再生电平具有一致的功率转移性能;2)当输入信噪比(SNR)约大于20 dB时,三种模式的噪声抑制比均可超过3 dB,并随着输入信噪比线性增加,其斜率约为1.2;3)在相同输入SNR条件下,三种模式的噪声抑制比相差不大,不超过1.1 dB.为了说明再生器的再生性能,当输入SNR为25 dB时,我们还给出了再生前后PAM-4信号的功率分布直方图.与现有的再生方案相比,本文方案的均匀多电平再生转移性能,使其更适合高频谱效率的长距空分复用系统和任意电平数的PAM信号再生.此外,该方案也能够扩展到波长域,有效提高光通信系统的传输容量.     

排名聚合算法在少量长列表聚合中的性能比较分析

排名聚合将多个排名列表聚合成一个综合排名列表,可应用于推荐系统、链路预测、元搜索、提案评选等.当前已有工作从不同角度对不同排名聚合算法进行了综述、比较,但存在算法种类较少、数据统计特性不清晰、评价指标不够合理等局限性.不同排名聚合算法在提出时均声称优于已有算法,但是用于比较的方法不同,测试的数据不同,应用的场景不同,因此何种算法最能适应某一任务在很多情况下仍不甚清楚.本文基于Mallows模型,提出一套生成统计特性可控的不同类型的排名列表的算法,使用一个可应用于不同类型排名列表的通用评价指标,介绍9种排名聚合算法以及它们在聚合少量长列表时的表现.结果发现启发式方法虽然简单,但是在排名列表相似度较高、列表相对简单的情况下,能够接近甚至超过一些优化类方法的结果;列表中平局数量的增长会降低聚合排名的一致性并增加波动;列表数量的增加对聚合效果的影响呈现非单调性.整体而言,基于距离优化的分支定界方法 (FAST)优于其他各类算法,在不同类型的排名列表中表现非常稳定,能够很好地完成少量长列表的排名聚合.     

聚苯硫醚熔体的压致凝固行为

采用施加压力的方法将聚苯硫醚熔体凝固,凝固后获得的聚苯硫醚样品经过降温和卸压后在常温常压下回收. X射线衍射和差示扫描量热分析表明:约20 ms时间的快速压缩过程可以抑制熔体结晶,制备出非晶态聚苯硫醚块材,样品的表面及中心都是非晶态.非晶态聚苯硫醚的玻璃化转变温度和晶化温度分别为318和362 K.常压下的退火实验表明,非晶态聚苯硫醚在425 K等温结晶的产物为正交相晶型.压致凝固法中熔体的凝固不是靠温度变化,而是靠压力变化,样品表面和内部处在一致的温度下同时受压凝固,避免了热传导对非晶尺寸的影响,因此非常有利于获得结构均匀的大尺寸非晶态材料.     

Dynamic relaxation process of a 3D super crystal structure in a Cu:KTN crystal

In this Letter,we report the existence and relaxation properties of a critical phenomenon on called a 3D super crystal that emerges at T=TC?3.5℃,that is,in the proximity of the Curie temperature of a Cu:KTN sample.The dynamics processes of a 3D super crystal manifest in its formation containing polarized nanometric regions and/or polarized clusters.However,with strong coupling and interaction of microcomponents,the characteristic relaxation time measured by dynamic light scattering demonstrates a fully new relaxation mechanism with a much longer relaxation time.As the relaxation mechanism of a relaxator is so-far undetermined,this research provides a novel perspective.These results can help structure a fundamental theory of ferroelectric relaxation.     

Harmonically pump a femtosecond optical parametric oscillator to 1.13 GHz by a femtosecond 515 nm laser

We demonstrate a harmonically pumped femtosecond optical parametric oscillator(OPO)laser using a frequency-doubled mode-locked Yb:KGW laser at a repetition rate of 75.5 MHz as the pump laser.Based on a bismuth borate nonlinear crystal,repetition rates up to 1.13 GHz are realized,which is 15 times that of the pump laser.The signal wavelength is tunable from 700 nm to 887 nm.The maximum power of the signal is 207 m W at the central wavelength of 750 nm and the shortest pulse duration is 117 fs at 780 nm.The beam quality(M^2 factor)in the horizontal and vertical directions of the output beam are 1.077 and 1.141,respectively.     

鬼成像中一些数学问题

鬼成像是一种与传统成像方式不同的通过光场涨落的高阶关联获得图像信息的新型成像方式。近年来,相比传统成像方式,鬼成像所拥有的一些优点如高灵敏度、超分辨能力、抗散射等,使其在遥感、多光谱成像、热X射线衍射成像等领域得到广泛研究。随着对鬼成像的广泛研究,数学理论和方法在其中发挥的作用愈显突出。例如,基于压缩感知理论,可以进行鬼成像系统采样方式优化、图像重构算法设计及图像重构质量分析等研究工作。本文旨在探索鬼成像中的一些有趣的数学问题,主要包括:系统预处理方法、光场优化及相位恢复问题。对这些问题的研究既可以丰富鬼成像理论,又能推动它在实际应用中的发展。     

GaInP/GaAs/Ge三结太阳电池不同能量质子辐照损伤模拟

以GaInP/GaAs/Ge三结太阳电池为研究对象,开展了能量为0.7, 1, 3, 5, 10 MeV的质子辐照损伤模拟研究,建立了三结太阳电池结构模型和不同能量质子辐照模型,获得了不同质子辐照条件下的I-V曲线,光谱响应曲线,结合已有实验结果验证了本文模拟结果,分析了三结太阳电池短路电流、开路电压、最大功率、光谱响应随质子能量的变化规律,利用不同辐照条件下三结太阳电池最大输出功率退化结果,拟合得到了三结太阳电池最大输出功率随位移损伤剂量的退化曲线.研究结果表明,质子辐照会在三结太阳电池中引入位移损伤缺陷,使得少数载流子扩散长度退化幅度随质子能量的减小而增大,从而导致三结太阳电池相关电学参数的退化随质子能量的减小而增大.相同辐照条件下,中电池光谱响应退化幅度远大于顶电池光谱响应退化幅度,中电池抗辐照性能较差,同时中电池长波范围内光谱响应的退化幅度比短波范围更大,表明中电池相关电学参数的退化主要来源于基区损伤.     

Design of diamond-shape photonic crystal fiber polarization filter based on surface plasma resonance effect

A novel plasmonic polarization filter based on the diamond-shape photonic crystal fiber(PCF) is proposed. The resonant coupling characteristics of the PCF polarization filter are investigated by the full-vector finite-element method. By optimizing the geometric parameters of the PCF, when the fiber length is 5 mm, the polarization filter has a bandwidth of 990 nm and an extinction ratio(ER) of lower than -20 dB. Moreover, a single wavelength polarization filter can also be achieved, along with an ER of -279.78 dB at wavelength 1.55 μm. It is believed that the proposed PCF polarization filter will be very useful in laser and optical communication systems.     

The optical nonreciprocal response based on a four-mode optomechanical system

We propose a scheme for realizing the optical nonreciprocal response based a four-mode optomechanical system,consisting of two charged mechanical modes and two linearly coupled optical modes. Two charged mechanical modes are coupled by Coulomb interaction, and two optical modes are coupled to one of mechanical modes by radiation pressure. We numerically evaluate the transmission probability of the probe field to obtain the optimum optical nonreciprocal response parameters. Also, we show that the optical nonreciprocal response is caused by the quantum interference between the optomechanical couplings and the linearly coupled interaction that breaks the time-reversal symmetry.     

Microstructure evolution and passivation quality of hydrogenated amorphous silicon oxide(a-SiOx:H) on〈100〉- and 〈111〉-orientated c-Si wafers

Hydrogenated amorphous silicon oxide(a-SiOx:H) is an attractive passivation material to suppress epitaxial growth and reduce the parasitic absorption loss in silicon heterojunction(SHJ) solar cells. In this paper, a-SiOx:H layers on different orientated c-Si substrates are fabricated. An optimal effective lifetime(τ(eff)) of 4743 μs and corresponding implied opencircuit voltage(iV(oc)) of 724 mV are obtained on〈100〉-orientated c-Si wafers. While τ(eff) of 2429 μs and iV_oc of 699 mV are achieved on 111-orientated substrate. The FTIR and XPS results indicate that the a-SiOx:H network consists of SiOx(Si-rich), Si–OH, Si–O–SiHx, SiO2 ≡ Si–Si, and O3 ≡ Si–Si. A passivation evolution mechanism is proposed to explain the different passivation results on different c-Si wafers. By modulating the a-SiOx:H layer, the planar silicon heterojunction solar cell can achieve an efficiency of 18.15%.