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81.
利用 L KB2 2 77生物活性检测系统 ,测定了用含不同浓度 Na F饮水喂养的小白鼠肝脏线粒体代谢热曲线 ,实验表明 ,饮水中 Na F浓度增加 ,最大热功率增大 ,代谢产热增加 ,停滞期和活性维持时间缩短 .热曲线测定完毕后的样品 ATP浓度分析表明 ,随着 Na F浓度增加 ,系统的 ATP浓度降低 .结合透射电镜对肝细胞超微结构研究结果 ,根据化学渗透假说对实验结果进行了比较完满的解释  相似文献   
82.
High pulse energy mode-locked multicore photonic crystal fiber laser   总被引:1,自引:0,他引:1  
Fang X  Hu M  Xie C  Song Y  Chai L  Wang C 《Optics letters》2011,36(6):1005-1007
A high pulse energy passively mode-locked fiber laser operating in the all-normal dispersion regime is demonstrated. The gain material is an Yb-doped multicore photonic crystal fiber with 18 cores in array-type geometry. Robust and self-starting mode locking is achieved using a fast semiconductor saturable absorber mirror. The laser generates 180?nJ chirped pulses at a 14.48?MHz repetition rate for an average power of 2.6?W. The 1.15?ps output pulses are compressed to 690?fs outside the cavity.  相似文献   
83.
描述了一种适用于阵列探测器的数据获取系统。系统基于PXI总线, 采用标准NIM插件作为前端电子学。系统软件采用C/C++语言编写, 在线分析通过调用ROOT类库实现, 系统运行在Linux操作系统下。多次测试结果表明, 系统稳定可靠, 单个ADC通道可以处理的最大事例率为40 kHz。A data acquisition system for array detectors is described. The system is based on PXI bus with standard NIM modules used as front\|end electronics. The system software is written in C/C++ language with its online analysis modules realized by ROOT class library. Several runs of the system under Linux show that it is reliable and is capable of handling event rates up to 40 k events/s for 1 ADC channel.  相似文献   
84.
We observed circular white-light dark spatial solitons in photovoltaic self-defocusing LiNbO3:Fe crystal using an ordinary incandescent lamp as light source (a line source) with the filament of the bulb parallel to the crystalline c axis. Besides the above condition, the formation of the elliptic soliton needs an additive condition that the crystalline c axis is parallel to the minor axis of dark elliptic spot.  相似文献   
85.
The line width of a tunable optical filter based on free-space optics was analyzed. The relationship between the line width and the Gaussian beam waist was theoretically derived and experimentally verified. The experimental results meet the theoretical analysis well, which is beneficial for the design of a tunable optical filter based on free-space optics.  相似文献   
86.
In combination of direct phase retrieval of coherent x-ray diffraction patterns with a novel tomographic reconstruction algorithm, we, for the first time, carried out quantitative 3D imaging of a heat-treated GaN particle with each voxel corresponding to 17 x 17 x 17 nm3. We observed the platelet structure of GaN and the formation of small islands on the surface of the platelets, and successfully captured the internal GaN-Ga2O3 core shell structure in three dimensions. This work opens the door for nondestructive and quantitative imaging of 3D morphology and 3D internal structure of a wide range of materials at the nanometer scale resolution that are amorphous or possess only short-range atomic organization.  相似文献   
87.
This paper presents a compact and low-power-based discrete-time chaotic oscillator based on a carbon nanotube field-effect transistor implemented using Wong and Deng's well-known model. The chaotic circuit is composed of a nonlinear circuit that creates an adjustable chaos map, two sample and hold cells for capture and delay functions, and a voltage shifter that works as a buffer and adjusts the output voltage for feedback. The operation of the chaotic circuit is verified with the SPICE software package, which uses a supply voltage of 0.9 V at a frequency of 20 kHz. The time series, frequency spectra, transitions in phase space, sensitivity with the initial condition diagrams, and bifurcation phenomena are presented. The main advantage of this circuit is that its chaotic signal can be generated while dissipating approximately 7.8 μW of power, making it suitable for embedded systems where many chaos-signal generators are required on a single chip.  相似文献   
88.
The microstructures and magnetic properties of nanoparticles, each composed of an antiferromagnetic (AFM) manganese-oxide shell and a ferromagnetic-like core of manganese-gallium (MnGa) compounds, are studied. The coreshell structure is confirmed by transmission electron microscope (TEM). The ferromagnetic-like core contains three kinds of MnGa binary compounds, i.e., ferrimagnetic (FI) DO22-type MnaGa, ferromagnetic (FM) Mn8Gas, and AFM DO19-type Mn3Ga, of which the first two correspond respectively to a hard magnetic phase and to a soft one. Decoupling effect between these two phases is found at low temperature, which weakens gradually with increasing temperature and disappears above 200 K. The exchange bias (EB) effect is observed simultaneously, which is caused by the exchange coupling between the AFM shell and FM-like core. A large coercivity of 6.96 kOe (1Oe = 79.5775 A·m^-1) and a maximum EB value of 0.45 kOe are achieved at 300 K and 200 K respectively.  相似文献   
89.
A finite-difference time-domain (FDTD) method combined with a periodic boundary condition is used to analyze the diffraction efficiency of an etched diffraction grating (EDG) demultiplexer coated with a metallic film at the backside. The numerical results show that the diffraction loss is mainly due to the scattering effect of shaded facets of a metal-coated grating at both the polarizations. However, the same shaded facets can produce a higher loss for a TM polarization than that for a TE polarization, which induces a higher polarization dependent loss (PDL) of the demultiplexer.  相似文献   
90.
The purpose of this paper is to report some experimental results with HfSiO films formed on silicon substrates by electron beam evaporation (EB-PVD) and annealed at different temperatures. The images of atomic force microscope (AFM) indicated that HfSiO film annealed at 900 °C was still amorphous, with a surface roughness of 0.173 nm. X-ray photoelectron spectroscopy (XPS) analysis revealed that the chemical composition of the film was (HfO2)3(SiO2) and Hf-Si-O bonds existed in the annealed film. Electrical measurements showed that the equivalent oxide thickness (EOT) was 4 nm, the dielectric constant was around 6, the breakdown voltage was 10 MV/cm, the fixed charge density was −1.2 × 1012 cm−2, and the leakage current was 0.4 μA/cm2 at the gate bias of 2 V for 6 nm HfSiO film. The annealing after deposition effectively reduced trapping density and the leakage current, and eliminated hysteresis in the C-V curves. Annealing also induced SiO2 growth at the interface.  相似文献   
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