平面分拆的矢量控制方法：列严格梯形平面分拆

作为移位平面分拆的自然拓广,本文引入了梯形平面分拆的概念.应用矢量控制技巧,建立了给定形状和行(列)分部约束的列严格梯形平面分拆集合之枚举函数的初等对称函数行列式表达式.其中之一的重要特例构成了关于循环对称平面分拆的Macdonald猜想的证明基础.     

窄线宽光纤激光器在1 030 nm波段实现3 kW近衍射极限输出

基于大模场面积掺镱光纤搭建了全光纤1 030 nm高功率窄线宽光纤激光主振荡功率放大系统,实现了3 004 W的最高功率输出,斜率效率69.27%,是目前报道的输出功率最高的1 030 nm波段近衍射极限光纤激光器。最高输出功率时,x,y方向的光束质量因子分别为1.169,1.174,3 dB光谱宽度为0.18 nm,放大自发辐射抑制比达到37 dB。     

Bounds for the perimeter of an ellipse

In this paper, we present several bounds for the perimeter of an ellipse, which improve some well-known results.     

高功率窄线宽光纤激光器的研究进展

近年来,光纤激光器得到了快速发展,且逐步应用于多个领域,功率的进一步提升仍然是光纤激光器的研究热点,光束合成是实现功率提升的重要手段,光束合成要求子光束为窄线宽光纤激光器,因此窄线宽光纤激光器的研究对光束合成功率的提升有重要意义。本文对窄线宽高功率光纤激光器的发展和研究现状进行了详细的介绍,并基于目前的研究现状分析了其发展的主要限制因素,并展望了未来的发展趋势。     

M2B7-(M=Mg,Zn)团簇的双重芳香性促进Mg-Mg和Zn-Zn单键的形成

本文使用密度泛函理论设计了两个无需配体的具有Mg-Mg和Zn-Zn单键的团簇Mg₂B₇^-和Zn₂B₇^-. 这两种团簇的全局能量最低构型均以M₂²⁺(B₇^3-)的形式存在,其中M-M单键处于准平面六边形形状的B₇部分的上方. 化学键分析证实了这些团簇中Mg-Mg和Zn-Zn单键的存在,这些单键是在异常稳定的B₇^3-的驱动下生成的. 该B₇^3-部分同时具有σ和π双重芳香性. 计算得到Mg₂B₇^-和Zn₂B₇^-的垂直跃迁能分别为2.79 eV和2.94 eV.     

Two-proton radioactivity within Coulomb and proximity potential model

Considering the preformation probability of the two emitted protons in the parent nucleus, we extend the Coulomb and proximity potential model (CPPM) to systematically study two-proton (2p) radioactivity half-lives of the nuclei close to proton drip line. The proximity potential chosen is Prox. 81 proposed by Blocki et al. in 1981. Furthermore, we apply this model to predict the half-lives of possible 2p radioactive candidates whose 2p radioactivity is energetically allowed or observed but not yet quantified in the evaluated nuclear properties table NUBASE2016. The predicted results are in good agreement with those from other theoretical models and empirical formulas, namely the effective liquid drop model (ELDM), generalized liquid drop model (GLDM), Gamow-like model, Sreeja formula and Liu formula.     

Interference of arsenic diffusion by argon implantation

In the study of ion implantation, electrically active ions or noble gas ions are often used for damage study, range profiling, etc. Very seldom are both electrically active ions and noble gas ions implanted at about the same depth. In the work reported here, argon and arsenic ion implants and their interference in diffusion were studied by using backscattering, electrical measurements, and transmission electron microscopy (TEM). Several unexpected phenomena were observed.

First, when both Ar and As are implanted in high doses (about 10¹⁶/cm²), at depths around a few hundred nanometers, the Ar significantly hampers the As diffusion, and the As prevents the outdiffusion of the Ar. The interference occurs regardless of which ion is implanted first.

Second, when Si wafers uniformly doped with about 4 × 10¹⁹ As/cm³ are ion-implanted with log¹⁶ Ar/cm² at 130 keV, the As atoms stay uniformly distributed. When the sample is annealed at a temperature between 900 and 1100°C in a nitrogen ambient, however, double peaks for both Ar and As are observed by backscattering. The nonuniform distribution of As after the heat treatment of the uniformly distributed As is puzzling.

Finally, the As profile for an As capsule diffused on a silicon wafer is greatly altered when the wafer has been pre-implanted with Ar. Arsenic atoms tend to build up at the same depth as the Ar atoms.

Several other observations concerning Ar and As are equally puzzling. This paper discusses the observations and some plausible explanations.     

改进加权支持向量机回归方法器件易损性评估

加权支持向量机回归算法,几乎都是以样本输入空间中的一个重要特征量的函数来确定权值,造成了在高维特征空间中作回归可能存在较大误差。针对这一问题,提出利用高维特征空间中的欧基里德距离来确定权值的方法,构造了一种改进的加权支持向量机回归算法,并将其应用到电子器件高功率微波易损性评估中。仿真结果表明：该方法具有比模糊神经网络法、标准支持向量机回归算法和一般的加权支持向量机回归算法更高的预测精度。由于增加了权值的计算过程,相对于标准支持向量机回归和模糊神经网络方法,该方法的效率较低,但与一般的加权支持向量机回归算法相当。