Influence of the water molecule on cation-pi interaction: ab initio second order Møller-Plesset perturbation theory (MP2) calculations

The influence of introducing water molecules into a cation-pi complex on the interaction between the cation and the pi system was investigated using the MP2/6-311++G method to explore how a cation-pi complex changes in terms of both its geometry and its binding strength during the hydration. The calculation on the methylammonium-benzene complex showed that the cation-pi interaction is weakened by introducing H(2)O molecules into the system. For example, the optimized interaction distance between the cation and the benzene becomes longer and longer, the transferred charge between them becomes less and less, and the cation-pi binding strength becomes weaker and weaker as the water molecule is introduced one by one. Furthermore, the introduction of the third water molecule leads to a dramatic change in both the complex geometry and the binding energy, resulting in the destruction of the cation-pi interaction. The decomposition on the binding energy shows that the influence is mostly brought out through the electrostatic and induction interactions. This study also demonstrated that the basis set superposition error, thermal energy, and zero-point vibrational energy are significant and needed to be corrected for accurately predicting the binding strength in a hydrated cation-pi complex at the MP2/6-311++G level. Therefore, the results are helpful to better understand the role of water molecules in some biological processes involving cation-pi interactions.     

ISOLATION,CHARACTERIZATION AND EXPRESSION OF THE COMPLEMENTARY DNA FOR HUMAN TUMOR NECROSIS FACTOR (TNF-α)

A cDNA for human TNF-α (615bp) was isolated by means of polymerase chain reaction (PCR) using first strand cDNA from PMA-induced HL-60 cells as template. The result from sequencing the 615 bp cDNA fragment indicated that it corresponded to the entire sequence of mature human TNF coding region. Direct expression of mature human TNF was achieved using a plasmid pHT-1 constructed by ligation of the cDNA and a synthetic DNA. The IPTG-induced bacterial product (hTNF) showed cytotoxicity to mouse L-929 cells. The TNF activity was further identified by neutralization of a specific monoclonal antibody against human TNF-α. Approximately 80,000 units of activity were detected per ml of culture at A600=2.     

共軛高分子的研究——Ⅲ.苯乙炔的热聚合

研究了苯乙炔在1.5,6和10小时的热聚合过程中温度对聚合物分子量的影响。所得结果表明,在150—500°的温度范围内,随着聚合温度的增高,聚合物的分子量都是逐渐降低,表明在高温时聚合物有裂解现象发生。红外光谱显示,400°所得聚合物的光谱吸收峯较之200°聚合物的为小,500°聚合物则出现无明显吸收峯的连续吸收,并且背景升高(“背景效应”)。聚合物的碳氢含量此同样随着聚合温度的升高而增大。这些结果,以及300°以上聚合物在溶液中显示明显的萤光等,被认为是表明聚苯乙炔在高温时发生结构改变,除裂解成小分子外,可能还有环化、脱氢、芳构化等发生,从而由链状结构变为稠环结构乃至三维共轭结构。 聚合物的电子自旋共振测试表明,聚苯乙炔的自由基浓度随下列顺序递增: 300°聚合物<400°聚合物<500°聚合物。     

大孔树脂吸附法处理含苯肼工业废水的研究

以Hz-841大孔树脂为吸附剂,95%乙醇为脱附剂处理含苯肼4000~5000mg/L的工业废水,取得了理想的分离效果,苯肼吸附率>99.8%,树脂工作吸附量40~50g/L。     

Fluoro-substituted DPP-bisthiophene conjugated polymer with azides in the side chains as ambipolar semiconductor and photoresist

Photoresists are essential for the fabrication of flexible electronics through all-photolithographic processes. Single component semiconducting photoresist exhibits both semiconducting and photo-patterning properties, and as a result, the device fabrication process can be simplified. However, the design of semiconducting polymeric photoresist with ambipolar semiconducting property remains challenging. In this paper, we report a single component semiconducting photoresist (PFDPPF4T-N₃) by incorporating azide groups and noncovalent conformation locks into the side alkyl chains and conjugated backbones of a diketopyrrolopyrrole-based conjugated polymer, respectively. The results reveal that PFDPP4FT-N₃ exhibits ambipolar semiconducting property with hole and electron mobilities up to 1.12 and 1.17 cm² V^?1 s^?1, respectively. Moreover, field effect transistors with the individual photo-patterned thin films of PFDPPF4T-N₃ also show ambipolar semiconducting behavior with hole and electron mobilities up to 0.66 and 0.80 cm² V^?1 s^?1, respectively. These results offer a simple yet effective design strategy for high-performance single component semiconducting photoresists, which hold great potential for flexible electronics processed by all photolithography.