An All-Solid-State Tunable Dual-Wavelength Ti：Sapphire Laser with Quasi-Continuous-Wave Outputs

A high power dual-wavelength Ti：sapphire laser system with wide turning range and high efficiency is described, which consists of two prism-dispersed resonators pumped by an a11-solid-state frequency-doubled Nd：YAG laser. Tunable dual-wavelength outputs, with one wavelength range from 750nm to 795nm and the other from 80Ohm to 850nm, have been demonstrated. With a pump power of 23 W at 532nm, a repetition rate of 6.5kHz and a pulse width of 67.6ns, the maximum dual-wavelength output power of 5.6 W at 785.3nm and 812.1 run, with a pulse width of 17.2ns and a line width of 2nm, has been achieved, leading to an optical-to-optical conversion efficiency of 24.4%.     

GaN MOS-HEMT Using Ultra-Thin A1203 Dielectric Grown by Atomic Layer Deposition

We report a GaN metal-oxide-semiconductor high electron mobility transistor （MOS-HEMT） with atomic layer deposited （ALD） Al2O3 gate dielectric. Based on the previous work [Appl. Phys. Lett. 86 （2005） 063501] of Ye et al. by decreasing the thickness of the gate oxide to 3.5nm and optimizing the device fabrication process, the device with maximum transconductance of 150mS/mm is produced and discussed in comparison with the result of lOOmS/mm of Ye et al. The corresponding drain current density in the 0.8-μm-gate-length MOS-HEMT is 800mA/mm at the gate bias of 3.0 V. The gate leakage is two orders of magnitude lower than that of the conventional A1GaN/GaN HEMT. The excellent characteristics of this novel MOS-HEMT device structure with ALD Al2O3 gate dielectric are presented.     

Room-Temperature Ferromagnetism of Co-Doped CeO2 Thin Films on Si（111） substrates

Using Co2O3 as the Co source, doped cerium oxide thin films with the composition of Ce0.97C00.03O2-δ （CCO） are deposited on Si（111） and glass substrates by pulse laser deposition technique. X-ray diffraction reveals that CCO films with （111） preferential orientation are grown on Si, while the fihn on glass is polycrystalline with nanocrystal. X-ray photoelectron spectroscopy shows that the （Jo displaces the （;e atom and exists in high spin state rather than low spin state, which contributes to the room-temperature ferromagnetism confirmed by vibration sample magnetometer. I~ilms on Si and glass are different in ferromagnetism, which is believed to be induced by different film microstructures. Based on these results, the possible ferromagnetism in this insulating film is discussed. Anyway, successful fabrication of CCO films with room-temperature ferromagnetism on Si substrates is of great importance in both technological and theoretical aspects.     

Bounce-Averaged Acceleration of Energetic Electrons by Whistler Mode Chorus in the Magnetosphere

We construct the bounce-averaged diffusion coefficients and study the bounce-averaged acceleration for energetic electrons in gyroresonance with whistler mode chorus. Numerical calculations have been performed for a band of chorus frequency distributed over a standard Gaussian spectrum specifically in the region near L = 4.5, where peaks of the electron phase space density occur. It is found that whistler mode chorus can efficiently accelerate electrons and can increase the phase space density at energies of about 1 MeV by more than one order of magnitude about one day, in agreement with the satellite observations during the recovery phase of magnetic storms.     

便携式近红外漫反射中药质量监控仪的研制

介绍了便携式近红外漫反射中药质量监控仪的设计思想、基本结构、测试条件和使用方法。该光谱仪具有体积小、重量轻、成本低等特点,现场监控中药质量是非常便利的。     

fficient Scheme for Implementing a Fredkin Gate via Resonant Interaction with Two-Mode Cavity Quantum Electrodynamics

A scheme for implementing a Fredkin gate with an atom sent through a microwave cavity is proposed. The scheme is based on the resonant atom-cavity interaction so that the gating time is sharply short, which is important in view of decoherence.     

叠栅条纹和CCD用于位移和角度的测量

将叠栅条纹测量技术和CCD器件结合应用于角度和位移的智能测量系统,该系统利用光栅的衍射自成像现象产生虚拟光栅,与另一光栅形成叠栅条纹,并用CCD光电转换系统,测量叠栅条纹的距离,可得到两光栅间的夹角.当任意一片光栅沿垂直于栅线方向移动时,通过数出移过叠栅条纹数目,即可得到相应光栅移动的位移.本文还分析和讨论了误差来源及给实验带来的影响.     

具有共轭结构的导电聚合物及其应用

具有共轭结构的导电聚合物在微电子学和光电子领域有着广泛的应用前景。文章简要介绍了这类聚合物材料的主要合成方法、导电机理及其应用概况，并对目前该领域的研究进展作了扼要评述。     

The Anomalous Effect of Interface Traps on Generation Current in Lightly Doped Drain nMOSFET＇s

The anomalous phenomenon of generation current ICD in the lightly doped drain （LDD） nMOSFET measured under the drain bias VD-step mode is reported. We propose an assumption of activated （A） and frozen （F） traps for the VD-step mode： The A traps contributes to ICD while the F process can make them lose the roles as generation centers. The A and F regions can form the F-A region. The comparison of the F and A regions decides the role of the F-A region. The experiments confirm the assumption.     

非紧超凸度量空间中的一个新的极大元定理及其对抽象经济的应用

在非紧超凸度量空间中建立了一个新的极大元定理.作为应用，获得了连续选择及其不动点定理和一个Browder-Fan不动点定理.最后，新建了非紧超凸度量空间中的定性对策和抽象经济的平衡点存在定理.