超强飞秒激光与固体靶产生的超热电子加热机制

 在SILEX-1激光器上测量了超强飞秒激光与Ta靶相互作用产生的出射超热电子能谱及角分布,研究了出射超热电子加热机制。激光脉宽为 30 fs,激光功率密度为8.5×10¹⁸ W/cm²。靶前法线方向超热电子温度为550 keV。从实验结果可知：共振吸收是靶前法线方向超热电子主要加热机制,这与靶前存在大密度标长预等离子体的实验条件吻合。靶厚为6～50 μm时,靶后超热电子沿法线方向出射;靶厚为2 mm时,该发射峰消失。     

非线性Schringer方程的Jacobi椭圆函数包络解

通过函数变换和扩展Jacobi椭圆函数展开法,利用吴消元法,借助符号运算软件Maple,得到非线性Schringer方程丰富的包络形式精确解,特别是由两个Jacobi椭圆函数表示的精确解.当模数m→1或m→0时,一部分解退化为双曲函数或三角函数表示的解,F-展开法和扩展的F-展开法得到的精确解是本文结果的特例.     

非线性Schr(o)inger方程的Jacobi椭圆函数包络解

通过函数变换和扩展Jacobi椭圆函数展开法,利用吴消元法,借助符号运算软件Maple,得到非线性Schr(o)inger方程丰富的包络形式精确解,特别是由两个Jacobi椭圆函数表示的精确解.当模数m→1或m→0时,一部分解退化为双曲函数或三角函数表示的解,F-展开法和扩展的F-展开法得到的精确解是本文结果的特例.     

Room-Temperature Ferromagnetism of Co-Doped CeO2 Thin Films on Si（111） substrates

Using Co2O3 as the Co source, doped cerium oxide thin films with the composition of Ce0.97C00.03O2-δ （CCO） are deposited on Si（111） and glass substrates by pulse laser deposition technique. X-ray diffraction reveals that CCO films with （111） preferential orientation are grown on Si, while the fihn on glass is polycrystalline with nanocrystal. X-ray photoelectron spectroscopy shows that the （Jo displaces the （;e atom and exists in high spin state rather than low spin state, which contributes to the room-temperature ferromagnetism confirmed by vibration sample magnetometer. I~ilms on Si and glass are different in ferromagnetism, which is believed to be induced by different film microstructures. Based on these results, the possible ferromagnetism in this insulating film is discussed. Anyway, successful fabrication of CCO films with room-temperature ferromagnetism on Si substrates is of great importance in both technological and theoretical aspects.     

Quantum Key Distribution Network Based on Differential Phase Shift

Using a series of quantum correlated photon pairs, we propose a theoretical scheme for any-to-any multi-user quantum key distribution network based on differential phase shift. The differential phase shift and the different detection time slots ensure the security of our scheme against eavesdropping. We discuss the security under the intercept-resend attack and the source replacement attack.     

Growth and Characterization of A1GaN/A1N/GaN HEMT Structures with a Compositionally Step-Graded A1GaN Barrier Layer

A new A1GaN/A1N/GaN high electron mobility transistor （HEMT） structure using a compositionally step-graded A1GaN barrier layer is grown on sapphire by metalorganic chemical vapour deposition （MOCVD）. The structure demonstrates significant enhancement of two-dimensional electron gas （2DEG） mobility and smooth surface morphology compared with the conventional HEMT structure with high A1 composition A1GaN barrier. The high 2DEG mobility of 1806 cm2/Vs at room temperature and low rms surface roughness of 0.220 nm for a scan area of 5μm×5 μm are attributed to the improvement of interracial and crystal quality by employing the stepgraded barrier to accommodate the large lattice mismatch stress. The 2DEG sheet density is independent of the measurement temperature, showing the excellent 2DEG confinement of the step-graded structure. A low average sheet resistance of 314.5Ω/square, with a good resistance uniformity of 0.68%, is also obtained across the 50 mm epilayer wafer. HEMT devices are successfully fabricated using this material structure, which exhibits a maximum extrinsic transconductance of 218 mS/ram and a maximum drain current density of 800 mA/mm.     

An All-Solid-State Tunable Dual-Wavelength Ti：Sapphire Laser with Quasi-Continuous-Wave Outputs

A high power dual-wavelength Ti：sapphire laser system with wide turning range and high efficiency is described, which consists of two prism-dispersed resonators pumped by an a11-solid-state frequency-doubled Nd：YAG laser. Tunable dual-wavelength outputs, with one wavelength range from 750nm to 795nm and the other from 80Ohm to 850nm, have been demonstrated. With a pump power of 23 W at 532nm, a repetition rate of 6.5kHz and a pulse width of 67.6ns, the maximum dual-wavelength output power of 5.6 W at 785.3nm and 812.1 run, with a pulse width of 17.2ns and a line width of 2nm, has been achieved, leading to an optical-to-optical conversion efficiency of 24.4%.     

便携式近红外漫反射中药质量监控仪的研制

介绍了便携式近红外漫反射中药质量监控仪的设计思想、基本结构、测试条件和使用方法。该光谱仪具有体积小、重量轻、成本低等特点,现场监控中药质量是非常便利的。     

线性非高斯序列的替代数据检验新方法

替代数据法作为检验时间序列非线性和混沌的统计方法获得了广泛的应用.由于原替代数据法的零假设为线性高斯过程,可能把线性非高斯过程,特别是非最小相位过程误判为非线性.为了解决这一问题,提出并详细推导了基于功率谱等价的非最小相位序列求逆方法;结合基于高阶累积量的非最小相位自回归滑动平均模型辨识方法,提出了检验序列是否为线性非高斯过程的替代数据生成新算法.仿真算例表明,上述方法成功地克服了原替代数据法的不足. 关键词： 替代数据 非线性检验 非最小相位 功率谱等价     

HT-7超导托卡马克边界等离子体参量及其涨落的实验研究

利用径向可移动朗缪尔三探针和马赫探针对HT-7超导托卡马克边界等离子体参量及其涨落进行了空时空分辨测量.给出了欧姆放电及其与低杂波电流驱动共同作用下边界等离子体电位φ_p、电子温度T_e和电子密度n_e及其涨落的径向分布.实验表明,在限制器附近,存在一由E_r×B确定的极向旋转速度剪切层.在剪切层内,T_e和n_e分布较陡,且φ_p,T_e和n_e的相对涨落水平下降明显.这说明剪切层对边界区的等离子体涨落具有抑制作用.低杂波驱动使径向电场梯度变陡,从而使剪切程度加深但对剪切层宽度无影响.此外,测量表明等离子体环向速度马赫数M_φ存在径向梯度.环向流的这种径向梯度可能是形成径向电场所需的平均极向流的一种重要驱动源 关键词： 托卡马克 边界涨落 低杂波驱动