Spin Transport in a Rashba Ring-Quantum Dot System Pumped by Microwave Fields

We report a theoretical study on producing electrically spin-polarized current in the Rashba ring with parallel double dots embedded, which are subject to two time-dependent microwave fields. By means of the Keldysh Green's function method, we present an analytic result of the pumped current at adiabatic limit and demonstrate that the interplay between the quantum pumping effectand spin-dependent quantum interference can lead to an arbitrarily controllable spin-polarized current in the device. The magnitude and direction of the charge and spin current can be effectively modulated by system parameters such as the pumping phase difference, Rashba precession phase, and the dynamic phase difference of electron traveling in two arms of ring; moreover, thespin-polarization degree of the charge current can also be tuned in the range [-∞, +∞]. Our findings may shed light on the all-electric way to produce the controllable spin-polarized charge current in the field of spintronics.     

Optimization of Single or Range of Harmonics by Using Two Gas Jets

The interference of high-order harmonics generated by two successive gas jets within a single laser pulse is discussed by a modeling with the inclusion of macroscopic propagation of the fundamental and harmonic fields in an ionizing medium. Based on the interference, we show that one can extract the laser Rayleigh range from the interference of harmonics and the accuracy of retrieve is independent of carrier-envelope phase while dependent on the pulse duration. Moreover~ we demonstrate that it is possible to optimize the single or range of harmonics with a high ratio relative to the adjacent orders by changing the separation of two gas jets, which is unavailable by using a single gas jet and linear polarized laser pulse.     

Effect of Reactor Pressure on Qualities of GaN Layers Grown by Hydride Vapour Phase Epitaxy

The influence of reactor pressure on GaN layers grown by hydride vapour phase epitaxy （HVPE） is investigated. By decreasing the reactor pressure from0. 7 to 0.5 mm, the GaN layer growth mode changes from the island-like one to the step flow. The improvements in structural and optical properties and surface morphology of GaN layers are observed in the step flow growth mode. The results clearly indicate that the reactor pressure, similarly to the growth temperature, is One of the important parameters to influence the qualities of GaN epilayers grown by HVPE, due to the change of growth mode.     

二极管泵浦激光器中泵浦光分布对激光器模式影响程度的计算方法

在激光器中,通常泵浦光呈不均匀分布,由此引起介质的增益也相应地出现不均匀分布,导致振荡光通过增益区时其分布发生变化。提出一种计算不均匀的泵浦光分布对于激光器内振荡光模式的影响程度,可以近似获得振荡光对原来场分布偏离的百分比的方法。在此基础上,对准连续运转的三向侧面泵浦激光器进行研究,分析不均匀泵浦光分布对振荡光场影响的规律。结果表明:当泵浦功率增加或谐振腔内损耗增加时,振荡光通过增益区时对原来分布的偏离程度也同时增加,呈单调变化关系;泵浦光不均匀分布对振荡光场的影响,与其沿振荡光轴向上的分布无关,仅仅取决于其在与振荡光垂直方向上的不均匀分布程度。通过计算还获得了此类效应的数量级,在2 000 W泵浦功率条件下,这种影响仅使振荡光偏离理想分布不到4%,而泵浦功率达到6 000 W时这种偏离则高达20%以上。     

空间波函数的对称性对氦原子双光子双电离过程中电子关联的影响

通过数值求解含时薛定谔方程,研究了氦原子具有对称空间波函数的1s2s 1S态和具有反对称空间波函数的1s2s 3S态分别作为初态的双光子双电离过程. 结果表明,对于初态为单重态1s2s 1S的双光子双电离过程,两个电离电子的能量分布随激光脉冲持续时间的增加呈现由单峰到双峰的变化,这里的单峰和双峰分别意味着两个电离电子主要携带相等和不等的能量;然而对于初态为三重态1s2s 3S的双光子双电离过程,两个电离电子的能量分布随激光脉冲持续时间的增加总是保持双峰结构. 这些结果表明当原子的初态处于反对称空间波函数时,两电子的空间密度分布具有较少的重叠,从而导致电子在超短激光脉冲中电离时电子关联能无法平均分配.     

Au@碳球复合结构中Au颗粒位置调控光吸收

采用时域有限差分（FDTD）法研究Au纳米颗粒@碳球（AuNPs@CS）复合结构的光吸收控制。发现Au纳米颗粒@碳球复合结构中Au颗粒的位置可以控制复合结构光吸收。模型计算中选取两粒Au纳米颗粒以最佳深度（0 nm）嵌入碳球表面。当两粒Au颗粒球心与碳球球心夹角为22.5°和45°时,复合结构光吸收较单一碳球光吸收明显增强;当夹角为315°、270°、180°、90°时,光吸收增量逐渐减小;当夹角为337.5°时,光吸收量低于单一碳球。这一结果主要归因于Au纳米颗粒位置变化可引起表面等离子体光强度和光散射方向的变化。改变碳球表面Au纳米颗粒的数量和位置,可以进一步调节AuNPs@CS复合结构的光吸收。     

壳模型对143Pm核跃迁几率的计算

原子核跃迁几率理论计算和实验对比是分析描述原子核内部结构的主要手段之一。目前采用重离子核反应观测到^143Pm核（Z=61，N=82）高自旋能级结构:激发态最大能级达x=8397．6keV，对应自旋J=47／2（h=1）。利用核壳模型在计算^143Pm核能级结构及对应的自旋宇称基础上，系统地对其γ级联跃迁链以及纯E2跃迁进行了计算，并与实验数据进行对比。采用OXBASH程序的单粒子跃迁公式计算了^143Pm的跃迁几率。At present, the high spin state of ^143 Pm（Z = 61, N = 82） have been investigated. The level scheme of ^143Pm has been extended up to an excitation energy Ex = 8 397.6 keV and spin J =47/2（ h = 1 ）. Based on the nuclear shell model （NSM）, we have calculated the sequences of γ-ray transition rates and the pure E2 reduced transition probabilities of ^143Pm, and compared with experimental data. The formula of single-particle transition probability in the OXBASH code was applied in this paper.     

有限长扶手椅形单壁碳纳米管分子静电势的理论研究

在混合密度泛函B3LYP理论下,用3-21G基函数对有限长扶手椅形单壁碳纳米管(4,4)、(5,5)和(6,6)的构型进行优化和分子静电势计算.结果表明:除近核区域为正常的正电势外,碳纳米管结构模型的管内和管外为负电势区域;在碳纳米管结构模型的管内,管心处均出现负电势的最小值,且负电势的绝对值随着碳纳米管的曲率降低而增大,管心轴线上静电势的变化随碳纳米管的曲率降低而减少,带电粒子流比较容易通过纳米管.     

基于冠层尺度的枣树色素含量的高光谱估算模型

植物冠层色素含量与氮素含量具有高度的相关性,是农业遥感中的关键研究因素。本研究的主要目的是：(1)对比偏最小二乘回归和支持向量机两种建模方法对枣树冠层色素的预测精度;(2)构建基于高光谱数据的枣树冠层色素含量定量反演模型,为枣树冠层色素含量的快速、无损、廉价、环保的测定提供一定的理论依据和技术支持。相关性分析结果表明,枣树冠层色素与高光谱数据之间具有较好的相关性,但叶绿素、叶绿素a要优于叶绿素b和类胡萝卜素。独立样本对模型的预测性能检验结果表明,偏最小二乘回归和支持向量机均能有效的估算枣树色素含量,但不同色素的偏最小二乘回归模型和支持向量机模型的预测精度存在一定的差异,叶绿素和类胡萝卜素的支持向量机模型的预测精度要高于偏最小二乘回归模型,而叶绿素a和叶绿素b则相反。比较不同色素的最佳反演模型的预测精度表明,叶绿素、叶绿素a和类胡萝卜素的预测精度要优于叶绿素b,前三者的决定系数大于0.8,残余预测误差高于2.0,平均相对误差低于13%,而叶绿素b的对应值分别为0.60%,20.79%和1.79%。     

Observation of Nano-Dots on HOPG Surface Induced by Highly Charged Arq+ Impact

Highly charged ions （HCIs） have huge potential energy due to their high charge state. When a HCI reaches a solid surface, its potential energy is released immediately on the surface to cause a nano-scale defect. Thus, HCIs are expected to be useful for solid-surface modifications on the nano-scale. We investigate the defects on a highly oriented pyrolytic graphite （HOPG） surface induced by slow highly charged Ar^q＋ ions with impact energy of 20-2000qeV with scanning probe microscopy （SPM）. In order to clarify the role of kinetic and potential energies in surface modification, the nano-defects are characterized in lateral size and height corresponding to the kinetic energy and charge state of the HCIs. Both the potential energy and kinetic energy of the ions may influence the size of nano-defect. Since potential energy increases dramatically with increasing charge state, the potential energy effect is expected to be much larger than the kinetic energy effect in the case of extremely high charge states. This implies that pure surface modification on the nano-scale could be carried out by slow highly charged ions. The mean size of nano-defect region could also be controlled by selecting the charge state and kinetic energy of HCI.