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181.
为了提高PGNAA系统中D-T中子管的中子慢化效率,获得更高的热中子产额,借助蒙特卡罗模拟,确定了以铅为中子反射层、5个聚乙烯层和铅层相互交替作为中子慢化层、碳化硼含量为3%的含硼聚乙烯作为中子吸收层以及铅作为γ屏蔽层的中子慢化装置模型。针对中子产额为3×107 n/s 的D-T中子管,该慢化装置输出面低于5 eV中子通量可达5.28×106 n/s,占总中子通量的30.8%,有效提高了中子慢化效率。经过验证模拟结果能够满足实验要求。To improve the moderating efficiency of D-T Neutron Generator in PGNAA system, and get higher thermal neutron yield, the Monte Carlo code MCNP was used to optimize the moderation setup. The lead was selected as neutron reflector and gamma absorber, 5 polyethylene layers and 4 lead layers constituted the neutron moderator and 3% boron-doping polyethylene was selected as neutron absorber. For the yield of 3107 n/s D-T Neutron Generator, this moderation setup can provide a yield of lower than 5 eV of 5.28106 n/s, accounting for 30.8% of total neutron yield, dramatically improves the moderating efficiency. It is proved that the simulation results can satisfy the requirement of PGNAA system by preliminary experimental verification. 相似文献
182.
The difference in temporal structures of retinal ganglion cell spike trains between spontaneous activity and firing activity after contrast adaptation is investigated. The Lempel-Ziv complexity analysis reveals that the complexity of the neural spike train decreases after contrast adaptation. This implies that the behaviour of the neuron becomes ordered, which may carry relevant information about the external stimulus. Thus, during the neuron activity after contrast adaptation, external information could be encoded in forms of some certain patterns in the temporal structure of spike train that is significantly different, compared to that of the spike train during spontaneous activity, although the firing rates in spontaneous activity and firing activity after contrast adaptation are sometime similar. 相似文献
183.
Growth and Characterization of A1GaN/A1N/GaN HEMT Structures with a Compositionally Step-Graded A1GaN Barrier Layer
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A new A1GaN/A1N/GaN high electron mobility transistor (HEMT) structure using a compositionally step-graded A1GaN barrier layer is grown on sapphire by metalorganic chemical vapour deposition (MOCVD). The structure demonstrates significant enhancement of two-dimensional electron gas (2DEG) mobility and smooth surface morphology compared with the conventional HEMT structure with high A1 composition A1GaN barrier. The high 2DEG mobility of 1806 cm2/Vs at room temperature and low rms surface roughness of 0.220 nm for a scan area of 5μm×5 μm are attributed to the improvement of interracial and crystal quality by employing the stepgraded barrier to accommodate the large lattice mismatch stress. The 2DEG sheet density is independent of the measurement temperature, showing the excellent 2DEG confinement of the step-graded structure. A low average sheet resistance of 314.5Ω/square, with a good resistance uniformity of 0.68%, is also obtained across the 50 mm epilayer wafer. HEMT devices are successfully fabricated using this material structure, which exhibits a maximum extrinsic transconductance of 218 mS/ram and a maximum drain current density of 800 mA/mm. 相似文献
184.
Near-Field Fluorescence and Topography Characterization of a Single Nanometre Fluorophore by Apertureless Tip-Enhanced Scanning Near-Field Microscopy
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Tip-enhanced near-field fluorescence and topography characterization of a single nanometre fluorophore is conducted by using an apertureless scanning near-field microscopy system. A fluorophore with size 80hm is mapped with a spatial resolution of 10hm. The corresponding near-field fluorescence data shows significant signal enhancement due to the apertureless tip-enhanced effect. With the nanometre spatial resolution capability and nanometre local tip-enhanced effect, the apertureless tip-enhanced scanning near-field microscopy may be further used to characterize a single molecule by realizing the local near-field spectrum assignment corresponding to topography at nanometre scale. 相似文献
185.
Fusion Reaction of ^16O+^14N and Its Implication for the Production of ^26Al in Explosive Oxygen Burning
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We suggest that the fusion reaction ^16O+^14N may be a new way to produce ^26Al in interstellar medium. Adopting different mixing modes, we investigate the impact on the production of ^26Al in explosive oxygen burning and find that the result is extremely sensitive to mixing mechanisms. In some cases, we obtain an encouraging result, for example, the greatest final abundance of ^26Al reaches 7.779×10^-6, which means that the explosive oxygen burning may be a new origin of ^26 Al. 相似文献
186.
The Bianchi type-Ⅲ cosmological model for a cloud string in the presence of bulk viscosity and magnetic field are presented. To obtain the determinate model it is assumed that there is an equation of state ρ = kA and the scalar of expansion is proportional to the shear scalar θ ∝ σ, which leads to a relation between metric potentials B = mC^n. The physical and geometric aspects of the model are also discussed. The model describes a shearing non-rotating continuously expanding universe with a big-bang start. In the absence of magnetic field, it reduces to the string model with bulk viscosity that was previously given in the literature. 相似文献
187.
We measure the signal amplitude and linewidth of a dark line in coherent population trapping in the Rb vapour cell filled with mixed buffer gas N2 and Ar as a function of cell temperature. We find that the dark line signal amplitude increases with temperature up to a maximum at 49℃ and then drops at higher temperatures due to quenching effects of N2. The linewidth of the dark line remains basically constant, at 1080 Hz. We also measure the linewidth of the dark line as a function of laser intensity. The linewidth increases linearly with laser intensity. An intrinsic linewidth (FWHM=896 Hz at 3.4 GHz) of the Rb cell is obtained. 相似文献
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