系列退火条件下Bi2201相超导电性的进化

通过对Pb掺杂Bi2201相超导样品进行系列条件下的真空退火处理,固定退火时间,调节退火温度,使得样品氧含量随退火温度升高而降低,从而使样品载流子浓度随退火温度升高而依次降低,进而影响样品超导电性.我们系统研究了退火条件、正常态电阻率和超导电性之间的关联,确定了样品最高超导转变温度的退火条件,讨论了Bi2201相超导样品在系列退火条件下其超导电性的进化,并获得了该体系最高超导转变温度Tconset=43K.     

一些静电场能量公式的适用范围

讨论并给出了一些静电场能量公式的适用范围,指出明确公式的适用范围是运用这些公式的前提．     

欧姆接触中接触电阻率的计算

从欧姆接触电阻率的定义出发,先从理论上介绍了热离子发射、热离子场发射和场发射三种不同情况下欧姆接触电阻率的计算公式,然后详细地从实验上综合各种测试方法,并讨论了其利弊．     

Dy3+/Tm3+共掺杂钒磷酸钇的共沉淀法合成及光谱性质

以Y2O3、Dy2O3、Tm2O3、V2O5、(NH4)2GPO4为原料,采用共沉淀化学法合成了体色纯白的Dy^3 、Tm^3 共掺杂YP1-xVxO4荧光粉。对合成荧光粉的V^5 ／p^5 、Dy^3 ／Tm^3 摩尔比等条件进行了研究。利用SEM、变温紫外激光激发下的发射光谱及紫外激发下的发射光谱,对所合成的粉体的表面形貌及发光性能进行了表征。YP1-xVxO4：Dy^3 ,Tm^3 荧光粉在325nm紫外激光激发下,低温时存在基质VO4^3-的蓝色宽带发射,随着温度升高,VO4^3 吸收的激发能量更有效地传递给Dy^3 、Tm^3 ,使其发光逐渐增强;在254nm的紫外光激发下,YP1-xVxO4：Dy^3 ,Tm^3 荧光粉发白光,是一种潜在的二基色高压汞灯用荧光粉。     

动静叶栅优化改型及其性能分析

本文对动静叶栅分别进行优化改型,并对改型前后叶栅的气动性能进行数值分析。动静叶栅的优化改型基于正反问题相结合的流函数方法,性能分析一方面基于单排叶栅定常粘性流动的数值计算,另一方面基于动静叶栅相互干扰非定常粘性流动的数值计算。算例结果表明,经过优化改型后的动静叶栅的气动性能,无论在定常流动条件下还是在非定常流动条件下,相比改型前均有较大幅度的改善。     

应用分离涡模型计算斜圆柱孔气膜冷却

分离涡模型(DES,Detached eddy simulation)兼有雷诺时均湍流模型计算量较小和大涡模拟计算精度高的优点。本文利用DES对平板单斜圆柱孔的气膜冷却进行了数值模拟,并将结果同RANS湍流模型的计算结果以及实验数据相比较,表明DES能有效弥补RANS湍流模型在计算三维不均匀非定常湍流场的不足,更接近实际地反映了气膜冷却中的流动和换热的本质规律。     

水平梯度表面能材料表面上的滴状凝结换热系数

本文在均质表面的单个球缺形液滴换热模型和液滴通用尺度分布规律的基础上,结合梯度表面能材料表面的液滴分布和凝结换热特性,得到了一维水平梯度表面能材料表面上的滴状凝结换热计算式。在此基础上,研究了壁面过冷度、接触角梯度、工质物性等参数对梯度表面能材料表面滴状凝结换热性能的影响。结果表明:随着过冷度的增加和凝结工质汽化潜热的增大和表面张力的减小和接触角梯度的增大,平均表面凝结换热系数会增大。     

偶氮聚合物薄膜的全光极化研究

报告了分散红共聚物膜HMMM-DR1,HMMM-DR19和偶氮侧链聚合物膜PCN6和PCN2的合成和制备, 并以HMMM-DR1和PCN6为代表比较研究了这两种具有不同吸收性质材料的全光极化特性,研究了他们的实时极化和弛豫过程,对他们的全光极化性质作了最基本的表征.研究了倍频光吸收对薄膜光极化效率的影响,讨论了偶氮聚合物材料光诱导二阶非线性极化率的效率和倍频光透射率之间的折衷关系,这对实用化的全光器件的研制是至关重要的.实验确证了在PCN6薄膜中实现了准相位匹配.对厚膜中光诱导二阶非线性极化率的弛豫抑制效应作出解释.     

Effects of Annealing on Schottky Characteristics in A1GaN/GaN HEMT with Transparent Gate Electrode

A1GaN/GaN heterostructure transistors are promising for power and switching applications. In addition, the transparent wide band-gap A1GaN/GaN heterostructure systems have received considerable attention to transparent electronics. Nowdays, Al-doped ZnO （AZO） thin film plays an increas- ingly important role in various fields of transparent electronics.The AZO-gated A1GaN/GaN HEMT with good dc characteristics and frequency character- istics has been reported. Annealing is widely used to improve the electri- cal characteristics of A1GaN/GaN HEMTs. It is re- ported that the Schottky leakage current can be re- duced by over four orders of magnitude by annealing in an A1GaN/GaN heterostructure with ITO/Ni/Au electrode. Pei et al. reported that the transparency of Ni/ITO gates of A1GaN/GaN HEMTs has been sig- nificantly improved after annealing. However, the evaluation of Schottky C V characteristics was ab- sent. Up to now, few results are reported on the Schot- tky annealing characteristics of AZO in A1GaN/GaN HEMT. Thus the effects of annealing on the leakage current, transparency and interface states character- istics need further study.     

Can contributions to B_s→l＋l-γ from the magnetic-penguin operator with real photons in the standard model be neglected？

Using the Bs meson wave function extracted from non-leptonic Bs decays, we reevaluate the rare decays Bs→l＋l- γ,（l=e,μ） in the Standard Model, including two kinds of contributions from the magnetic-penguin operator with virtual and real photons. We find that contributions to the exclusive decays from the magnetic-penguin operator b→sγ with real photons, which were regarded as negligible in the previous literature, are large and the branching ratios Bs→l＋l-γ are enhanced by a factor of almost 2. With the predicted branching ratios of the order of 10-8, it is expected that these radiative dileptonic decays will be detected in LHC-b and B factories in the near future.