聚苯胺膜的磁学性能

本文讨论聚苯胺自支撑膜的电子自旋共振(ESR)和磁学性能与成膜、拉伸处理以及质子掺杂等因素的影响,实验结果表明,聚苯胺膜的磁学性能与它的粉末样品相似,其磁化率表现为与温度无关的泡利型顺磁性和符合居里定律的顺磁性之和,质子掺杂后,其磁学性能也随绝缘体-半导体-金属态相变而变化,并且质子掺杂后自旋密度的增加符合“质子化导致自旋不成对”的机理,拉伸后的聚苯胺的泡利自旋和居里自旋均比其粉末和薄膜样品明显提高,这可能是由于拉伸取向增强了聚苯胺链上醌环上氮原子上弧对电子间的相互作用所致。 关键词：     

Preparation, structures and photoluminescent enhancement effect of PbWO4–TiO2 composite nanofilms

A novel route for preparing PbWO₄–TiO₂ nanofilms on a glass substrate is firstly proposed. The collodion is used as a dispersant and film-forming agent. The nanofilms are characterized through SEM, XRD, TG/DTA, PL and IR, respectively. The results of XRD indicate PbWO₄ particles with tetragonal scheelite structure and TiO₂ particles with Anatase phase, and SEM shows they are well dispersed in the substrate. Compared with nanoparticles, when TiO₂ nanoparticles are added in 5% ratio, the PL intensities at 395 nm of PbWO₄ nanofilms are enhanced obviously. IR spectrum reveals a large absorption band between 750 and 870 cm⁻¹, which is the W–O stretching vibration in WO₄ tetrahedron.     

N型4H-SiC同质外延生长

利用水平式低压热壁CVD (LP-HW-CVD) 生长系统,台阶控制生长和衬底旋转等优化技术,在偏晶向的4H-SiC Si(0001) 晶面衬底上进行4H-SiC同质外延生长,生长温度和压力分别为1550℃和10⁴ Pa,用高纯N₂作为n型掺杂剂的4H-SiC原位掺杂技术,生长速率控制在5μm/h左右.采用扫描电镜(SEM)、原子力显微镜(AFM),傅里叶变换红外光谱(FTIR)和Hg/4H-SiC肖特基结构对同质外延表面形貌、厚度、掺杂浓度以及均匀性进行了测试.实验结果表明,4H-SiC同质外延在表面无明显缺陷,厚度均匀性1.74%, 1.99% 和1.32%(σ/mean),掺杂浓度均匀性为3.37%,2.39%和2.01%.同种工艺条件下,样品间的厚度和掺杂浓度误差为1.54%和3.63%,有很好的工艺可靠性. 关键词： 4H-SiC 同质外延生长 水平热壁CVD 均匀性     

长程铯里德堡分子的势能曲线

本文介绍了半经典近似下的低能电子-原子散射理论, 引入贋势描述里德堡电子与基态原子的相互作用, 数值计算了铯原子nS (n=30-60)里德堡态与6S基态原子形成的长程里德堡分子的势能曲线. 并对最外层势阱进行分析, 获得长程里德堡分子的势阱深度、平衡距离与主量子数n的关系. 为实验制备里德堡分子并进一步分析其性质提供理论依据. 里德堡分子对外界非常敏感, 可用于微弱信号的检测.     

一种含势阱具有混合交换势形式的平均原子模型

对传统的简单平均原子模型（AAM）作了改进：1使用了动态自由电子判据；2将自由电子分为三种类型，分别用分波法和统计方法加以处理；3应用变分原理给出了一种混合形式的交换势取代了Slater势；4应用材料常态常数标定了原子结构中的参数.作为算例，计算并与实验比较了Fe,Ni,Cu的零温电子压强. 关键词： 平均原子结构 交换势 电子压强     

Structural and spectroscopic properties of small Pun （n= 2-5） molecules

The equilibrium structures and the electronic, spectroscopic and thermodynamic properties of small Pu_n (n=2-5) molecules are systematically investigated using the methods of general gradient approximation (GGA) of density functional theory (DFT). The results show that the bond length of the lowest-energy structure of Pu₂ is 2.578 AA. The ground state structure of Pu₃ is a triangle with D_3h symmetry, whereas for Pu₄, the ground state structure is a square (D_4h) and the spin polarization of 16 for molecule Pu₅ with square geometry (D_4h) is the most stable structure. For the ground state structures, the vibrational spectra as well as thermodynamic parameters are worked out. In addition, the values for the highest occupied molecular orbital (HOMO) and the lowest unoccupied molecular orbital (LUMO) along with the energy gap of all the Pu_2-5 structures are presented. The relevant structural and chemical stabilities are predicted.     

High power-added-efficiency AlGaN/GaN HEMTs fabricated by atomic level controlled etching

An atomic-level controlled etching(ACE)technology is invstigated for the fabrication of recessed gate AlGaN/GaN high-electron-mobility transistors(HEMTs)with high power added efficiency.We compare the recessed gate HEMTs with conventional etching(CE)based chlorine,Cl₂-only ACE and BCl³/Cl₂ACE,respectively.The mixed radicals of BCl₃/Cl₂were used as the active reactants in the step of chemical modification.For ensuring precise and controllable etching depth and low etching damage,the kinetic energy of argon ions was accurately controlled.These argon ions were used precisely to remove the chemical modified surface atomic layer.Compared to the HEMTs with CE,the characteristics of devices fabricated by ACE are significantly improved,which benefits from significant reduction of etching damage.For BCl₃/Cl₂ACE recessed HEMTs,the load pull test at 17 GHz shows a high power added efficiency(PAE)of 59.8%with an output power density of 1.6 W/mm at Vd=10 V,and a peak PAE of 44.8%with an output power density of 3.2 W/mm at Vd=20 V in a continuous-wave mode.     

Some mathematical aspects of Anderson localization: boundary effect,multimodality, and bifurcation

Anderson localization is a famous wave phenomenon that describes the absence of diffusion of waves in a disordered medium. Here we generalize the landscape theory of Anderson localization to general elliptic operators and complex boundary conditions using a probabilistic approach, and further investigate some mathematical aspects of Anderson localization that are rarely discussed before. First, we observe that under the Neumann boundary condition, the low energy quantum states are localized on the boundary of the domain with high probability. We provide a detailed explanation of this phenomenon using the concept of extended subregions and obtain an analytical expression of this probability in the one-dimensional case. Second, we find that the quantum states may be localized in multiple different subregions with high probability in the one-dimensional case and we derive an explicit expression of this probability for various boundary conditions. Finally, we examine a bifurcation phenomenon of the localization subregion as the strength of disorder varies. The critical threshold of bifurcation is analytically computed based on a toy model and the dependence of the critical threshold on model parameters is analyzed.     

基于薄膜编码超表面的宽频超薄声散射体

该文提出了一种基于薄膜编码超表面的宽频超薄声散射体。利用附加质量块的薄膜和空气腔组成的薄膜结构构建了反射声波相位差接近180°的两种共振单元。将两种共振单元按照一定的顺序进行排列,可以组成深亚波长尺寸下的声学超表面。所构建的声学超表面可以产生宽频有效的散射声场。通过有限元仿真软件对多个频率的近场散射声场分布、远场声指向性和扩散系数进行了仿真计算,仿真结果显示,该散射体可以高效地散射入射声波,并且散射效果在一定的频率范围内是宽频有效的。