Influence of exciton-exciton interaction with spin paired charge carriers and exciton-lattice interaction on the surface properties of crystalline solids

Applying tight-binding approximation and spin pairing of like charge carriers in a pair of excitons created in a lattice, the possibility of forming a bound exciton-exciton state is studied. It is found that, provided there exists strong exciton-lattice interaction, such a bound state may be formed and its energy may lie within the valence band deforming the material into a crystalline solid with no energy gap. Lowering of the energy is calculated in naphthalene and anthracene crystals where some experimental results are known. The excess energy released after the formation of such bound state can be adequate, depending on the material, to desorb neutral atoms or eject of electrons from surfaces.     

An improved approach for hydrogen analysis in metal samples using single laser-induced gas plasma and target plasma at helium atmospheric pressure

We report in this paper the results of an experimental study on hydrogen analysis of solid samples in high pressure helium ambient gas employing the basic scheme of laser induced breakdown spectroscopy (LIBS). It is shown that the metastable excited state of helium atom can be utilized to induce delayed excitation of the ablated hydrogen atoms, and thereby avoid the Stark broadening effect as well as overcoming the undesirable mismatch effect, which are responsible for inefficient excitation respectively. It is further demonstrated that for samples of high boiling-point materials such as zircaloy, successful hydrogen analysis can be achieved by a newly introduced double excitation technique employing single laser realized in a modified configuration of the conventional LIBS method. PACS 51-52     

Spatially resolved Raman spectroscopy evaluation of residual stresses in 3C-SiC layer deposited on Si substrates with different crystallographic orientations

Raman scattering studies were performed on hot-wall chemical vapor deposited (heteroepitaxial) silicon carbide (SiC) films grown on Si substrates with orientations of (1 0 0), (1 1 1), (1 1 0) and (2 1 1), respectively. Raman spectra suggested that good quality cubic SiC single crystals could be obtained on the Si substrate, independent of its crystallographic orientation. Average residual stresses in the epitaxially grown 3C-SiC films were measured with the laser waist focused on the epilayer surface. Tensile and compressive residual stresses were found to be stored within the SiC film and in the Si substrate, respectively. The residual stress exhibited a marked dependence on the orientation of the substrate. The measured stresses were comparable to the thermal stress deduced from elastic deformation theory, which demonstrates that the large lattice mismatch between cubic SiC and Si is effectively relieved by initial carbonization. The confocal configuration of the optical probe enabled a stress evaluation along the cross-section of the sample, which showed maximum tensile stress magnitude at the SiC/Si interface from the SiC side, decreasing away from the interface in varied rate for different crystallographic orientations. Defocusing experiments were used to precisely characterize the geometry of the laser probe in 3C-SiC single crystal. Based on this knowledge, a theoretical convolution of the in-depth stress distribution could be obtained, which showed a satisfactory agreement with stress values obtained by experiments performed on the 3C-SiC surface.     

Au-analyte adducts resulting from single massive gold cluster impacts

Utilizing Au₄₀₀⁴⁺ primary ions produces large molecular ion yields, some in excess of unity, with minimal surface damage. A surprising observation is the occurrence of Au-analyte adducts as part of the ejecta desorbed by a single Au-cluster impact. We present data that demonstrate that Au and Au-adducts as secondary ions (e.g., AuCN⁻, AuGly⁻ and AuCsI⁻) are the result of the interaction between a single primary ion, Au₄₀₀⁴⁺ and the target atoms.     

High-density plasma etching of indium-zinc oxide films in Ar/Cl2 and Ar/CH4/H2 chemistries

The dry etching characteristics of transparent and conductive indium-zinc oxide (IZO) films have been investigated using an inductively coupled high-density plasma. While the Cl₂-based plasma mixture showed little enhancement over physical sputtering in a pure argon atmosphere, the CH₄/H₂/Ar chemistry produced an increase of the IZO etch rate. On the other hand, the surface morphology of IZO films after etching in Ar and Ar/Cl₂ discharges is smooth, whereas that after etching in CH₄/H₂/Ar presents particle-like features resulting from the preferential desorption of In- and O-containing products. Etching in CH₄/H₂/Ar also produces formation of a Zn-rich surface layer, whose thickness (∼40 nm) is well-above the expected range of incident ions in the material (∼1 nm). Such alteration of the IZO layer after etching in CH₄/H₂/Ar plasmas is expected to have a significant impact on the transparent electrode properties in optoelectronic device fabrication.     

Measurements of theg-factor ratio of the first 3− and 5− states in40Ca and the lifetime of the 5− state

[Theg-factor ratio of the first excited 3^? and 5^? states in⁴⁰Ca was measured to beg ₃/g ₅=1.01(10) employing the implantation perturbed angular correlation technique. The static hyperfine fields (SF) in Fe and Gd hosts were used. In addition the lifetime of the 5^? state was measured to be τ=426(7)ps. The values of the SF in Gd and Fe hosts were deduced and compared with systematics in this element region.     

Synthesis of high-purity α- and β-PbO and possible applications to synthesis and processing of other lead oxide materials

Litharge, the red tetragonal form of lead oxide α-PbO and massicot, the yellow orthorhombic form β-PbO, are synthesized from lead(II) salts in aqueous media at elevated temperatures. Scanning electron microscopy (SEM) and X-ray diffraction (XRD) were used to characterize the size, morphology, and crystallographic structural forms of the products. The role of impurities in the experimental synthesis of the materials and microstructural variations in the final products are described. The implications of these observations regarding the synthesis of different conducting lead oxides and other related materials are discussed. PACS 71.20.Ps; 72.80.Jc; 74.62.Bf; 74.62.Dh; 75.50.Tt     

Self-broadening in the millimeter-wave spectrum of ozone

Self broadened widths of seven lines of ozone between 75 and 120 GHz have been measured at room temperature. The variation with temperature of the self-broadening parameter for three of these lines has been studied in the range 245–292°K.     

Dynamic response of permalloy/Cu/Co magnetoresistive sandwiches

The dynamic response of trilayer magnetoresistive permalloy/Cu/Co films was studied by high-frequency permeability spectra measurements. The resonance frequency is shown to depend on the interlayer copper thickness. This dependence is related to exchange coupling between permalloy and cobalt and the interaction field is estimated using the Landau–Lifschitz–Gilbert model.