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71.
Electron mobility has been calculated in a number of binary II–VI compound semiconductors using a displaced Maxwellian distribution function and taking the various scattering mechanisms into consideration at different lattice temperatures and for various amounts of ionized impurity concentrations. It is observed that the low field mobility values can be expressed by a cubic power relationship with lattice temperature and with ionized impurity concentration using a least mean square fit technique with an accuracy better than 5 per cent. Similarly, the field dependence of mobility can also be expressed as a power series of the applied electric field. It is suggested that these equations can be profitably used for a quick estimation of mobility values as a check on experiments and also as sufficiently accurate formulae for simulation and modelling purposes.  相似文献   
72.
73.
Summary In this paper a Gauss-Jordan algorithm with column interchanges is presented and analysed. We show that, in contrast with Gaussian elimination, the Gauss-Jordan algorithm has essentially differing properties when using column interchanges instead of row interchanges for improving the numerical stability. For solutions obtained by Gauss-Jordan with column interchanges, a more satisfactory bound for the residual norm can be given. The analysis gives theoretical evidence that the algorithm yields numerical solutions as good as those obtained by Gaussian elimination and that, in most practical situations, the residuals are equally small. This is confirmed by numerical experiments. Moreover, timing experiments on a Cyber 205 vector computer show that the algorithm presented has good vectorisation properties.  相似文献   
74.
A general method for the preparation of diaza-spirocycles is reported. This method used an olefin metathesis in order to construct the desired spirocyclic framework. Beginning with commercially available protected amino ketones, this strategy ultimately produced pharmacologically relevant diaza-scaffolds in an efficient and high-yielding process.  相似文献   
75.
Aspects of Generic Entanglement   总被引:4,自引:4,他引:0  
We study entanglement and other correlation properties of random states in high-dimensional bipartite systems. These correlations are quantified by parameters that are subject to the ``concentration of measure' phenomenon, meaning that on a large-probability set these parameters are close to their expectation. For the entropy of entanglement, this has the counterintuitive consequence that there exist large subspaces in which all pure states are close to maximally entangled. This, in turn, implies the existence of mixed states with entanglement of formation near that of a maximally entangled state, but with negligible quantum mutual information and, therefore, negligible distillable entanglement, secret key, and common randomness. It also implies a very strong locking effect for the entanglement of formation: its value can jump from maximal to near zero by tracing over a number of qubits negligible compared to the size of the total system. Furthermore, such properties are generic. Similar phenomena are observed for random multiparty states, leading us to speculate on the possibility that the theory of entanglement is much simplified when restricted to asymptotically generic states. Further consequences of our results include a complete derandomization of the protocol for universal superdense coding of quantum states.  相似文献   
76.
Multi-quantum well heterostructures (MQWHs) of the novel Ga(NAsP)/GaP material system have been grown, pseudomorphically strained to GaP-substrate. The crystalline perfection is verified by transmission electron microscopy (TEM). For As-concentrations in excess of about 70%, a direct band structure and adequate luminescence efficiency for laser device application is observed. Temperature-dependent photoluminescence (PL) investigations show the influence of carrier localisation and non-radiative recombination processes typical for dilute nitride materials. With rising N content in the active material, the emission wavelength shifts towards longer wavelength, leading to Ga(NAs)/GaP MQW structures with photon energies below the indirect band gap of silicon (Si). At the same time the luminescence intensity drops due to an increase in non-radiative carrier traps and/or structural degradation.  相似文献   
77.
Procedures are discussed for production of rubber-bitumen compounds based on spent rubber items. A possibility of using these binders for paving is studied experimentally.  相似文献   
78.
Using Brown's construction (J. Algebra 15 (1970) 103) of an exact 6-term sequence for a fibration of groupoids we show how an exact 9-term sequence can be associated to a fibration of bigroupoids. Applications to topology and algebra are given.  相似文献   
79.
A new speckle shearing interferometer with simple setup is proposed. The interferometer can be converted easily from a speckle referenced speckle pattern interferometer into a speckle shearing interferometer and vice versa. A beamsplitter and a mirror are used to generate the shear. The amount of shear can be adjusted by simply rotating the mirror. The costs involved are low and it is particularly useful for fast inspection in non-destructive testing of structural integrity. Both the theoretical studies of the method of measurement and the experimental results are presented.  相似文献   
80.
Monte Carlo simulation within the grand canonical ensemble, the histogram reweighting technique, and finite size scaling analysis are used to explore the phase behaviour of heteronuclear dimers, composed of A and B type atoms, on a square lattice. We have found that for the models with attractive BB and AB nearest-neighbour energy, uBB=uAB=−1, and for non-repulsive energy between AA nearest-neighbour sites, uAA<0, the system belongs to the universality class of the two-dimensional Ising model. However, when uAA>0, the system exhibits a non-universal critical behaviour. We have evaluated the dependences of the critical point characteristics on the value of uAA.  相似文献   
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