Dissolution behaviour of the barrier layer of porous oxide films on aluminum formed in phosphoric acid studied by a re-anodizing technique

Chemical dissolution of the barrier layer of porous oxide films formed on aluminum foil (99.5% purity) in the 4% phosphoric acid after immersion in 2 mol dm⁻³ sulphuric acid at 50 °C has been studied. The barrier layer thickness before and after dissolution was determined using a re-anodizing technique. A digital voltmeter with a computer system was used to record the change in the anode potential with re-anodizing time. It has been found that the barrier layer material may consist of two or three regions according to the dissolution rate. The barrier oxide contains two layers at 35 V: the outer layer with the highest dissolution rate and the inner layer with low dissolution rate. The barrier oxide contains three layers at 40 V and above it: the outer layer with high dissolution rate, the middle layer with the highest dissolution rate and the inner layer with low dissolution rate. It has been shown that there is a dependence of the dissolution rate on the surface charge of anodic oxide film. Annealing of porous alumina films for 1 h at 200 °C leads to disappearance of layers with different dissolution rates in the barrier oxide. We explained this phenomenon by the absence of the space charge in the barrier oxide of such films.     

Effect of continuous magnetic field on the growth mechanism of nanoporous anodic alumina films on different substrates

The effects induced by an external homogeneous magnetic field on the oxide film growth on aluminum in aqueous solutions of oxalic and sulfuric acid and on surface morphology of the alumina films were studied. Aluminum films of 100 nm thickness were prepared by thermal evaporation on SiO₂/Si and glass-ceramic substrates. The pore diameter for oxalic acid alumina films on the SiO₂/Si substrate decreased by 0.8 nm, the interpore distance by 5.9 nm, and cell diameter by 6.9 nm if a magnetic field of 0.5 T was applied. When aluminum was anodized in sulfuric acid on the same substrate, the significant changes in parameters of porous structure of alumina, which were similar to the ones in oxalic acid, are firstly observed in stronger magnetic fields (of 0.7 T). On the basis of data obtained in this study and of previous investigation on the negative space charge and thermally activated defects in anodic alumina, we concluded that the intensity of the magnetic field is associated with energy of electron traps and that the changes of cell diameter characterize the trap concentration. The energy of electron traps in oxalic acid alumina films was proved to be smaller than the one in films formed in sulfuric acid, but the concentration of traps was of the same order of magnitude. When the substrate was replaced with the glass-ceramic one, the pore diameter in oxalic acid alumina films increased to ca. 17.6 nm.     

Analysis of chemical dissolution of the barrier layer of porous oxide on aluminum thin films using a re-anodizing technique

Chemical dissolution of the barrier layer of porous oxide formed on thin aluminum films (99.9% purity) in the 4% oxalic acid after immersion in 2 mol dm⁻³ sulphuric acid at 50 °C has been studied. The barrier layer thickness before and after dissolution was calculated using a re-anodizing technique. It has been shown that above 57 V the change in the growth mechanism of porous alumina films takes place. As a result, the change in the amount of regions in the barrier oxide with different dissolution rates is observed. The barrier oxide contains two layers at 50 V: the outer layer with the highest dissolution rate and the inner layer with a low dissolution rate. Above 60 V the barrier oxide contains three layers: the outer layer with a high dissolution rate, the middle layer with the highest dissolution rate and the inner layer with a low dissolution rate. We suggest that the formation of the outer layer of barrier oxide with a high dissolution rate is linked with the injection of protons or H₃O⁺ ions from the electrolyte into the oxide film at the anodizing voltages above 57 V.