General synthesis of persistent trityl radicals for EPR imaging of biological systems

In this paper we describe the syntheses of the tetraoxygenated triarylmethyl (trityl) radical 14 and the tetrathiatriarylmethyl (trityl) radicals 15 and 16. The syntheses include new and improved preparations of the key intermediate compounds 1 and 2. The new route to compound 2 is noteworthy for its efficiency and its avoidance of the highly toxic compound phosgene as well as the isolation of the air-sensitive 1,2,4,5-benzenetetrathiol.     

Underlying reverse current mechanisms in a-Si:H p-i-n solar cell and compact SPICE modeling

The defect states in bulk of i-layer and at p⁺/i interface have been studied by using dark reverse current-voltage (J-V) measurements. The dark reverse current as a function of voltage has been analyzed on the basis of thermal generation of the carriers from mid-gap states in i-layer. Based on its behavior the thermal generation mechanism has been divided into two types. Thermal generation at lower bias (<5 V) shows V^1/2 behavior, whereas at higher bias follows an exponential dependence of voltage (>5 V). This was explained using a thermal generation zone at lower bias, which is a source of reverse currents, and its evolution towards p⁺/i interface with increasing voltage. The analytical result has shown that at lower reverse bias (V < 5 V) the defect states in the bulk of i-layer and at higher bias (V ∼ 25 V) the defect states at p⁺/i interface are contributing to the reverse currents. Reverse bias annealing (RBA) treatment which has been performed on these cells shows that a reduction of defect states more in the i-region near to the p⁺-layer and at p⁺/i interface as compared to the deep regions in bulk of i-layer. The calculated defect state density (DOS) is varying from its intrinsic value of 2.4 × 10¹⁷ cm⁻³ in the bulk of the i-layer up to 2.1 × 10¹⁹ cm⁻³ near and at p⁺/i interface. These values decrease to 7.1 × 10¹⁶ cm⁻³ and 2.7 × 10¹⁷ cm⁻³, respectively, in the samples annealed under reverse bias at 2 V. The bias dependent leakage current behavior has been modeled and implemented in simulation program with integrated circuit emphasis (SPICE) using simple circuit elements based on voltage controlled current sources (VCCS). Simulated and measured reverse leakage current characteristics are in reasonable agreement.     

Silver-catalyzed formal inverse electron-demand Diels-Alder reaction of 1,2-diazines and siloxy alkynes

A highly effective silver-catalyzed formal inverse electron-demand Diels-Alder reaction of 1,2-diazines and siloxy alkynes has been developed. The reactions provide ready access to a wide range of siloxy naphthalenes and anthracenes, which are formed in good to high yields, under mild reaction conditions, using low catalyst loadings.     

Total synthesis of (+/-)-bipinnatin J

[reaction: see text]. The total synthesis of (+/-)-bipinnatin J was achieved through a concise route that features the use of a silver ion promoted S(N)1-type gamma-alkylation of a siloxyfuran and a diastereoselective Cr(II)-mediated macrocyclization to provide bipinnatin J (1), wherein the remote furanone stereocenter at C10 induced the relative stereochemistry of the two additional stereocenters.