Studies on 1,10-Phenanthroline Complexes of Some Hydroxyaryltellurium Trihalides

The synthesis and structural features of some newly synthesized 1,10-phenanthroline complexes of p-hydroxyphenyl-and 3-methyl-4-hydroxyphenyltellurium trihalides (chlorides, bromides, and iodides) are reported. The resulting complexes have been subjected to elemental analyses, conductance and cryoscopic measurements, infra-red and proton magnetic resonance spectral studies. Solution studies reveal the weak to 1:1 electrolyte type behavior of these complexes in solution. Spectral studies indicate the linkage of phenanthroline to the tellurium atom through the nitrogen atoms. Central tellurium atom in these complexes is hexa-coordinated in an octahedral way.     

Weak radiative decays of hyperons within theSU(6) broken quark-diquark model

In view of persisting discrepancy between experimental and theoretical results, specially in the weak radiative decays of∑ ⁺ andΞ ⁰, we analyse these decays within the framework of the QCD inspired quark-diquark model. On introducing a slightSU(6) breaking we obtainα(∑ ⁺→p+γ)≈?0.9 which is in excellent agreement with experimental value. Other decays are also improved in this scheme.     

Ultrasonic and Thermophysical Properties of Cobalt Nanowires

Acoustical Physics - We have estimated elastic, mechanical, thermal and ultrasonic properties, in high temperature regime, of cobalt nanowires (Co-NWs) having a hexagonal close-packed (HCP)...     

Ionizing radiation effects on electrical and reliability characteristics of sputtered Ta2O5/Si interface

This paper describes the effect of ionizing radiation on the interface properties of Al/Ta₂O₅/Si metal oxide semiconductor (MOS) capacitors using capacitance–voltage (C–V) and current–voltage (I–V) characteristics. The devices were irradiated with X-rays at different doses ranging from 100?rad to 1?Mrad. The leakage behavior, which is an important parameter for memory applications of Al/Ta₂O₅/Si MOS capacitors, along with interface properties such as effective oxide charges and interface trap density with and without irradiation has been investigated. Lower accumulation capacitance and shift in flat band voltage toward negative value were observed in annealed devices after exposure to radiation. The increase in interfacial oxide layer thickness after irradiation was confirmed by Rutherford Back Scattering measurement. The effect of post-deposition annealing on the electrical behavior of Ta₂O₅ MOS capacitors was also investigated. Improved electrical and interface properties were obtained for samples deposited in N₂ ambient. The density of interface trap states (D_it) at Ta₂O₅/Si interface sputtered in pure argon ambient was higher compared to samples reactively sputtered in nitrogen-containing plasma. Our results show that reactive sputtering in nitrogen-containing plasma is a promising approach to improve the radiation hardness of Ta₂O₅/Si MOS devices.     

Thermal conductivity of NbSe3

The thermal conductivity, κ, of NbSe₃ has been measured by novel self-heating techniques that allowed the electric field dependence of κ to also be measured. Measurements were made from 35 K to room temperature. Above the charge density wave transitions, the phonon thermal conductivity is 4–7 times the electron thermal conductivity, and it rises smoothly below the transitions, indicating that phonon-phonon scattering predominates. Phonon mean free parths have been estimated at 187 A° at 60 K and 60 A° at 150 K. No clear anomalies were observed at the phase transitions, giving upper limits to changes in the phonon mean free path. No field dependence of κ was observed.     

A Swinging Rod in Brans-Dicke Theory

This article presents the calculation of gravitational radiation from an oscillating rod in Brans–Dicke (BD) theory. Here only the selected formulae is shown and is applied to a toy problem without any rigorous derivation. First, the explicit expressions for the polarizations are calculated and then the power radiated away in gravitational waves (GWs) is obtained. This problem is motivated by the famous Eddington's spinning rod.     

Lossy mode resonance-based uniform core tapered fiber optic sensor for sensitivity enhancement

A lossy mode resonance (LMR)-supported fiber optic sensor in which a uniform fiber core is placed among two identical tapered regions, is investigated numerically. Indium tin oxide (ITO) and aluminum-doped zinc oxide (AZO) are considered as LMR active materials used to excite several lossy modes and gold and silver are used as surface plasmon resonance (SPR) active materials. In this probe design, a central uniform core coated with ITO/AZO is the active sensing region, whereas tapered regions are meant for bringing the incident angle close to the critical angle. The sensitivity of the present fiber optic bio-sensor is evaluated for first two LMRs utilizing both ITO and AZO separately, along with its variation with the taper ratio (TR). For ITO, the maximum sensitivity values are observed to be 18.425 μm RIU⁻¹ (refractive index unit) and 0.825 μm RIU⁻¹, corresponding to the first and second LMRs, respectively, at a TR of 1.6 and for AZO, equivalent values are 0.79 μm RIU⁻¹ and 0.35 μm RIU⁻¹, respectively, at a TR of 2.0. The results illustrate that the first LMR is more sensitive than the second LMR and the ITO-coated probe possesses greater sensitivity than the AZO-coated probe for both LMRs. Similarly, for the fiber optic SPR sensor, the maximum value of sensitivity is 5.6425 μm RIU⁻¹, in the case of gold and 5.0615 μm RIU⁻¹ in the case of silver, at a TR of 1.6. Hence, the result shows that the sensor with the present fiber optic probe design has around a 3-fold enhancement in sensitivity compared with conventional SPR sensors. This study will have applications in many sensing schemes where the requirement of large sensitivity is vital.     

A new valence 2Π state of PO

Rotational structure of a series of new absorption bands of PO in the region 1850 to 1600 Å has been analyzed from a spectrum taken at high resolution. The bands are attributed to an electronic transition P²Π-X²Π, where P²Π is a new valence state of PO. Some of these bands have been found to be perturbed. A qualitative account of these perturbations is presented. A probable electron-configuration $\text{π}{}^3\text{π}{}^{12}$ has been suggested for the new state. From the predissociation observed in the higher vibrational levels of P an upper limit of 48 885 cm^?1 (X²Π, T₀ = 0) for the ground state dissociation energy has been obtained.     

Rheological microscopy: local mechanical properties from microrheology

We demonstrate how tracer microrheology methods can be extended to study submicron scale variations in the viscoelastic response of soft materials; in particular, a semidilute solution of lambda-DNA. The polymer concentration is depleted near the surfaces of the tracer particles, within a distance comparable to the polymer correlation length. The rheology of this microscopic layer alters the tracers' motion and can be precisely quantified using one- and two-point microrheology. Interestingly, we found this mechanically distinct layer to be twice as thick as the layer of depleted concentration, likely due to solvent drainage through the locally perturbed polymer structure.