Dielectric and conduction mechanism studies of PVA-orthophosphoric acid polymer electrolyte

Polyvinyl alcohol (PVA)-based proton conducting polymer electrolytes have been prepared by the solution cast technique. The conductivity is observed to increase from 10⁻⁹ to 10⁻⁴ S cm⁻¹ as a result of orthophosphoric acid (H₃PO₄) addition. The plot of conductivity vs temperature shows that a phase transition occurred at 343 K in the sample PVA-33 wt% H₃PO₄. The β-relaxation peak is observed at 313 K. The glass transition temperature of PVA-33 wt% H₃PO₄ is 343 K. Orthophosphoric acid seems to play a dual role, i.e., as a proton source and as a plasticizer. The ac conductivity σ _ac = Aω ^s was also calculated in the temperature range from 303 to 353 K. The conduction mechanism was inferred by plotting the graph of s vs T from which the conduction mechanism for sample PVA-17 wt% H₃PO₄ was inferred to occur by way of the overlapping large polaron tunneling (OLPT) model and the conduction mechanism for the sample PVA-33 wt% H₃PO₄ by way of the correlated barrier height (CBH) model.     

Zn-doping effect on the energy barrier to magnetization reversal in superparamagnetic nickel ferrite nanoparticles

Measurements of ac-susceptibility and dc-magnetization were carried out on samples of Ni_1-xZn_xFe₂O₄ nanoparticles (x=0, 0.25, 0.5, 0.75) with average diameters 〈D〉≈7 nm. Values of the superparamagnetic blocking temperature T̄_B were obtained from the characteristic temperature behavior of the imaginary susceptibility χ_imag. An Arrhenius-type law, which accurately describes the relationship between the observation time τ_obs and the blocking temperature, was used to determine the effective energy barrier to magnetization reversal U_eff. A Zn-content dependence of the energy barrier is observed, where U_eff changes little for 0≤x≤0.25, it peaks at x=0.5, and decreases back upon further Zn-doping. The large increase of U_eff at x=0.5 is attributed to an enhanced magnetic anisotropy induced by the crossover between two spatial arrangements of spins in the A and B sub-lattices of the ferrimagnetic inverse spinel. PACS 75.50.Bb; 75.50.Gg; 75.30.Et     

Error estimation,adaptivity and data transfer in enriched plasticity continua to analysis of shear band localization

In this paper, an adaptive FE analysis is presented based on error estimation, adaptive mesh refinement and data transfer for enriched plasticity continua in the modelling of strain localization. As the classical continuum models suffer from pathological mesh-dependence in the strain softening models, the governing equations are regularized by adding rotational degrees-of-freedom to the conventional degrees-of-freedom. Adaptive strategy using element elongation is applied to compute the distribution of required element size using the estimated error distribution. Once a new mesh is generated, state variables and history-dependent variables are mapped from the old finite element mesh to the new one. In order to transfer the history-dependent variables from the old to new mesh, the values of internal variables available at Gauss point are first projected at nodes of old mesh, then the values of the old nodes are transferred to the nodes of new mesh and finally, the values at Gauss points of new elements are determined with respect to nodal values of the new mesh. Finally, the efficiency of the proposed model and computational algorithms is demonstrated by several numerical examples.     

Einstein relation in chemically doped organic semiconductors

Based on the assumption of Gaussian energy distributions of the lowest unoccupied molecular orbital (LUMO) and the highest occupied molecular orbital (HOMO), analytical expressions of generalized Einstein relation in chemically doped organic semiconductor are developed, by approximation of Coulomb traps with a rectangle potential well. Numerical calculations show that traditional Einstein relations do not hold for chemically doped organic semiconductors. Similar to physical doping, the dependence of diffusion coefficient to mobility D/μ ratio on the carrier concentration has a maximum. An essential difference between chemical doping and physical doping is that, the D/μ ratio in chemically doped organic semiconductors depends not only on carrier concentration and doping concentration, but also on the applied electric field. PACS 71.20.Rv; 72.90.+y; 73.50.-h     

The Pontryagin Maximum Principle 50 years later

Proceedings of the Steklov Institute of Mathematics -     

Directed and elliptic flow in 197Au+197Au at intermediate energies

Directed and elliptic flow for the ¹⁹⁷Au+¹⁹⁷Au system at incident energies between 40 and 150 MeV per nucleon has been measured using the INDRA 4π multi-detector. For semi-central collisions, the excitation function of elliptic flow shows a transition from in-plane to out-of-plane emission at around 100 MeV per nucleon. The directed flow changes sign at a bombarding energy between 50 and 60 MeV per nucleon and remains negative at lower energies. Molecular dynamics calculations (CHIMERA) indicate sensitivity of the global squeeze-out transition on the σ _NN and demonstrate the importance of angular momentum conservation in transport codes at low energies.     

Diels-alder reaction of 1-methylcycloprop-2-ene-1-carbonitrile with methyl 2-oxo-2H-pyran-5-carboxylate

The Diels-Alder reaction of 1-methylcycloprop-2-ene-1-carbonitrile and coumalic acid methyl ester (methyl 2-oxo-2H-pyran-5-carboxylate) gave a 2:1 adduct with endo-syn configuration of both cyclopropane fragments, which was established by X-ray analysis. According to the ¹H NMR data, the reaction involves intermediate formation of decarboxylated 1:1 adduct having a cycloheptatriene structure; its isomerization into the corresponding caradiene, followed by addition of the second dienophile molecule, was confirmed by quantum-chemical calculations.     

Superior refractive index tailoring properties in composite ZrO2/SiO2 thin film systems achieved through reactive electron beam codeposition process

Composite optical thin-film materials have received a significant amount of interest in order to relieve the material constraints on refractive indices as well as reducing the number of layers required in optical coating design. Amongst others binary zirconia-silica composite thin films have attracted considerable attentions due to their several favorable opto-mechanical properties. In the present studies such a composite system under certain compositional mixings displayed both refractive index and band gap supremacy over pure zirconia films violating the most popular Moss rule. This unexpected evolution has several practical applications one of which can be directly employed in extending the range of tunability of the refractive index. Besides, the probing of such a novel evolution through the analysis of ellipsometric refractive index modeling and morphological correlation functions has revealed several novel as well as superior microstructural properties in the composite thin film systems. All these characterization and analysis techniques distinctly indicate a strong interrelation between the microstructural ordering and superior optical properties of the present zirconia-silica codeposited composites.