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W. Szyszko F. Vega C. N. Afonso 《Applied Physics A: Materials Science & Processing》1995,61(2):141-147
The modification of the thermal conductivity and melting temperature of unrelaxed amorphous Ge films on Si substrates upon laser-induced relaxation and crystallization is presented. Real-Time Reflectivity (RTR) measurements are used to determine experimentally both the melting threshold and the melt durations, and the finite element method is used to simulate the laser-induced heat-flow process. A thermal conductivity ofk=0.010 W dem K is determined for the unrelaxed material by fitting the experimental melting thresholds of unrelaxed films of different thicknesses. A similar procedure applied to the amorphous relaxed and crystallized materials lead to a shift to higher values of both the thermal conductivity and the melting temperature. In order to achieve a good fit of the experimental melt durations, it was necessary to assume a large degree of undercooling prior to solidification. The role of undercooling in the solidification process is finally discussed in terms of its dependence on the faser energy density and the high thermal conductivity of the substrate. 相似文献
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Diffusion processes are usually associated with randomness in the system. In this paper we show that deterministic diffusion processes can also occur in systems with zero entropy that mimic chaos with any precision without being mathematically chaotic. A random walk model is used to predict the behavior of the diffusion coefficient. (c) 1996 American Institute of Physics. 相似文献
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Exact and explicit string solutions propagating in 2+1 dimensional de Sitter spacetime are presented and physically analized. (In this case the string equations reduce to a sinh-Gordon model.) Strings generically tend to inflate or either to collapse. The world-sheet time interpolates between the cosmic (±) and conformal (0) times. For 0, the typical string instability is found, while for ±, a new string behavior appears. In that regime, the string expands (or contracts) but not with the same rate as the universe does. The string constraints select periodic solutions of the sinh-Gordon equation associated to the lower boundary of the allowed zone, therefore excluding elliptic solutions.In memoriam M. C. PolivanovLaboratoire de Physique Théorique et Hautes Energies, Paris. Landau Institute for Theoretical Physics, Russian Academy of Sciences. Observatoire de Paris, Section de Meudon, Demirm. Published in Teoreticheskaya i Matematicheskaya Fizika, Vol. 94, No. 2, pp. 232–240, February, 1993. 相似文献
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Fabrication of Co/CoO Exchange Bias System by Ion Implantation and Its Magnetic Properties 下载免费PDF全文
We use ion implantation as a new approach to build an anti-ferromagnetic (AFM) cluster embedded exchange bias (EB) system. Co film with thickness of 130nm is deposited on the Si (111) substrate using magnetron sputtering, 60keV O+ is chosen to implanted into the Co film to form CoO AFM clusters coupling with Co matrix at the interface. By measuring the hysteresis loop after field-cooling, significant shifts of loop along the applied field are confirmed. When increasing the implantation dose to 2×1017/cm2 and annealed samples in N2 atmosphere, we obtain the highest HEB to 458Oe. 相似文献