排序方式: 共有51条查询结果,搜索用时 15 毫秒
21.
XANES measurements are reported for a number of transition metal oxides. Oxide phases, in which the transition element could be widely varied (within the 3d series) while preserving the crystal structure, were systematically examined. The materials examined include monoxides, perovskites, zircons and spinels. For those samples of a given oxide phase, the near edge spectra are nearly identical but spectra for different phases are dissimilar. These observations are consistent with the simplest view of the x-ray absorption process, namely that dipole selection rules are obeyed and spectral features predominately result from transitions between the K shell and empty states with p-character. 相似文献
22.
23.
24.
25.
26.
27.
28.
W. C. Moss J. Krzyzkiewicz W. Mehl W. E. Garner F. J. Veal B. Whipp H. Gawlick K. Kling und J. Pfanhauser 《Fresenius' Journal of Analytical Chemistry》1937,108(3-4):110-113
Ohne Zusammenfassung 相似文献
29.
The dependence of the critical current density Jc on hydrostatic pressure to 0.6 GPa is determined for a single 25 degrees [001]-tilt grain boundary in a bicrystalline ring of nearly optimally doped melt-textured YBa2Cu3Ox. Jc is found to increase rapidly under pressure at +20%/GPa. A new diagnostic method is introduced (pressure-induced Jc relaxation) which reveals a sizable concentration of vacant oxygen sites in the grain boundary region. Completely filling such sites with oxygen anions should lead to significant enhancements in Jc. 相似文献
30.
Colakerol L Veal TD Jeong HK Plucinski L DeMasi A Learmonth T Glans PA Wang S Zhang Y Piper LF Jefferson PH Fedorov A Chen TC Moustakas TD McConville CF Smith KE 《Physical review letters》2006,97(23):237601
Electron accumulation states in InN have been measured using high resolution angle-resolved photoemission spectroscopy (ARPES). The electrons in the accumulation layer have been discovered to reside in quantum well states. ARPES was also used to measure the Fermi surface of these quantum well states, as well as their constant binding energy contours below the Fermi level E(F). The energy of the Fermi level and the size of the Fermi surface for these quantum well states could be controlled by varying the method of surface preparation. This is the first unambiguous observation that electrons in the InN accumulation layer are quantized and the first time the Fermi surface associated with such states has been measured. 相似文献