Electric Instability in <Emphasis Type="Italic">n</Emphasis>-CdTe:In Layers with <Emphasis Type="Italic">S</Emphasis>-Shaped Voltage-Current Characteristics

A switching of the S-type in the 20–200 μm thick polycrystalline n-CdTe:In layers with resistance of 10³–10⁶ Ω·cm is studied. The electric instability in the layers is found to be due to the electron-thermal breakdown mechanism. The dependence of the switching threshold parameters on the intensity of exposure can be used for fabrication of infrared-radiation controlled electric switches on the basis of n-CdTe:In layers. __________ Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 6, pp. 28–30, June, 2005.     

Elastic scattering of slow positrons on atoms

The results of calculations of the elastic scattering cross section of positrons on noble gas and alkali atoms are presented. The calculations are performed within the one-electron Hartree-Fock approximation with multielectron correlations in the so-called random phase approximation with exchange taken into account. Virtual positronium formation is taken into account and proved to be very important. Arguments are presented that the positron polarization potential is repulsive for alkali atoms. The results obtained are in a reasonable agreement with experiment and with some previously reported calculations.     

effect of surface modification on the properties of hydrogen-sensitive GaAs-based Schottky diodes

The surface of hydrogen-sensitive GaAs Schottky diodes is modified by nonpolishing etching and by producing quantum wells and quantum dots in the space-charge region of the semiconductor. The sensitivity to hydrogen is found to increase by a factor of 8–37 after the etching and by two or three orders of magnitude after the introduction of quantum wells and dots. It is shown that the increased sensitivity is associated with the lowering of the barrier at the Pd/GaAs interface, the retardation of hydrogen diffusion into GaAs due to the presence of strained quantum-size layers, and an increase in the recombination current. The presence of the recombination component is supported by luminescence from the quantum wells and quantum dots, as well as from the GaAs substrate. The etch composition is shown to be a decisive factor in raising the sensitivity.     

Ordered states and structural transitions in a system of Abrikosov vortices with periodic pinning

A system of Abrikosov vortices in a quasi-two-dimensional HTSC plate is considered for various periodic lattices of pinning centers. The magnetization and equilibrium configurations of the vortex density for various values of external magnetic field and temperature are calculated using the Monte Carlo method. It is found that the interaction of the vortex system with the periodic lattice of pinning centers leads to the formation of various ordered vortex states through which the vortex system passes upon an increase or a decrease in the magnetic field. It is shown that ordered vortex states, as well as magnetic field screening processes, are responsible for the emergence of clearly manifested peaks on the magnetization curves. Extended pinning centers and the effect of multiple trapping of vortices on the behavior of magnetization are considered. Melting and crystallization of the vortex system under the periodic pinning conditions are investigated. It is found that the vortex system can crystallize upon heating in the case of periodic pinning.     

Polarization dynamics of intracavity frequency-doubled Nd:YAG laser

Experimental study of low-frequency dynamics of an intracavity frequency-doubled Nd:YAG laser demonstrates the influence of the interaction of orthogonally polarized modes, participating in frequency doubling (type II phase matching), on the stability of the laser output. At a sufficiently low pump rate and low conversion efficiency, the laser shows stable operation with a low noise level at the frequencies of relaxation oscillations. At a high pump power and/or a high conversion efficiency, the laser emission becomes unstable as a result of Hopf bifurcation at the frequencies of relaxation oscillations that are responsible for the anti-phase polarization dynamics of the laser.     

What Oxidation State of Iron Determines the Amethyst Colour?

A colourless quartz crystal doped with ⁵⁷Fe³⁺ was obtained by hydrothermal synthesis in an NH₄F solution. The crystal was transformed into violet amethyst by gamma-irradiation. The change in colour was accompanied by changes in the Mössbauer spectrum that can be interpreted as the conversion of trivalent iron into the tetravalent state: Fe³⁺→Fe⁴⁺.

     

The mechanism of emission in the red photoluminescence band of porous silicon

Porous silicon (PS) exhibits several photoluminescence (PL) bands, whose spectral position and intensity depend strongly on the actual conditions of preparation of PS, its treatment, and subsequent use. The PS PL band peaking at about 1.8 eV and usually assigned to the intrinsic emission of silicon nanocrystals was studied. It was shown that the temperature-induced variation of the PL kinetics in the 80 to 300-K interval follows a complex pattern and depends noticeably on the actual point on the band profile. The temperature behavior of PL decay in the 1.8-eV band is determined by the electron-hole recombination rate within a nanocrystal and the cascade carrier transitions from small to large nanocrystals, with an attendant decrease in energy.     

Angular correlations in the decays of two unstable identical particles with close momenta

For the decay of two identical particles with close momenta, the angular correlations between the directions of emission of decay products are considered on the basis of the model of independent single-particle sources emitting unstable unpolarized particles of nonzero spin. These correlations reflect spin correlations that are caused by quantum-statistics and final-state-interaction effects. A general theory of angular correlations in the decays of two arbitrarily polarized particles (resonances) is constructed.