Electron-active cyclotron resonance in p-doped InMnAs in high magnetic fields

We present a theoretical and experimental study of electron-active cyclotron resonance in p-doped InMnAs in high magnetic fields. Results are based on an 8-band Pidgeon–Brown model generalized to include finite k_z effects and s(p)–d exchange interaction between itinerant carriers and Mn d-electrons. The e-active transitions in the valence band in p-doped samples take place due to the nature of multiple valence bands (heavy and light holes). We have calculated the absorption spectra in high magnetic fields and identified optical transitions which contribute to the cyclotron resonance for both e-active and h-active polarizations. Calculations show agreement with experimental results.     

Which degrees of freedom play a role in multinucleon transfer processes?

A presentation of some recent significant results obtained in the field of multinucleon transfer reactions at Coulomb barrier energies is given. The comparison of the experimental observables with the predictions of theoretical models treating quasi-elastic and deep-inelastic processes on the same ground reveals interesting features of the reaction mechanisms not clearly identified in the past.     

Searches for single-spin asymmetry in the inclusive production of neutral pions in the central region at a proton beam energy of 70 GeV

Results are presented that were obtained by measuring single-spin asymmetry in the inclusive production of neutral pions in the reaction p+p ↑→ π ⁰+X at x _F≈0. A beam of 70-GeV protons was extracted directly from the vacuum chamber of the accelerator by means of a bent single crystal. For transverse momenta in the range 1.0<p _T<3.0 GeV/c, the single-spin asymmetry independently measured by two detectors is zero within the errors. This result is in agreement with Fermilab data obtained at 200 GeV, but it is at odds with CERN data measured at 24 GeV.     

Effect of multidomain structure on the field dependences of magnetization and forced striction in easy-plane antiferromagnets

The forced magnetostriction and magnetization are measured in the easy-plane-type two-sublattice NiCl₂ antiferromagnet (AFM) in the case where this AFM passes from the multidomain to a single-domain state. It is shown that, in accordance with the magnetoelastic nature of the multidomain state, the field dependences of the forced magnetostriction and magnetization are interrelated and affected by the transition from the multidomain to the single-domain state. The character of these dependences corresponds to the case where the magnetization and striction are proportional to the number of domains with an energetically favored orientation with respect to the external magnetic field.     

Optical absorption of hexagonal boron nitride involving nitrogen vacancies and their complexes

The pseudopotential and supercell methods are used to study the optical absorption of graphite-like hexagonal boron nitride involving deep levels of nitrogen vacancies and their clusters. The impurity-induced absorption is shown to be mainly related to electron transitions between the states that are antisymmetric with respect to the horizontal plane. Therefore, this absorption is highly anisotropic and is maximum for light waves polarized normally to the hexagonal axis. The optical absorption and photoconductivity spectra before and after neutron irradiation and thermal treatment are interpreted, and the activation energies for the thermoluminescence and conductivity of nitrogen-depleted boron nitride before and after fast-neutron irradiation and vacuum annealing are found.     

Effect of bismuth nanolayers on the oriented growth of fullerene C<Subscript>60</Subscript> on an amorphous substrate

The effect of a bismuth sublayer with an effective thickness of 0.5 to 4 nm on the structure of C₆₀ fullerene films grown on amorphous substrates (silicon covered with a natural oxide layer; glass) using the quasi-closed-volume method is studied. An x-ray diffraction study of fullerene films showed that the intensity ratio between the (220) and (111) peaks depends nonmonotonically on the sublayer thickness. In the bismuth sublayer thickness range 0.5–2.0 nm, fullerene films are found to exhibit a growth texture with the 〈110〉 axis; the average crystallite size was ～20 µm. The quality of the texture can be improved by varying the fullerene growth temperature.     

Ultrashort electron beam and volume high-current discharge in air under the atmospheric pressure

Conditions are studied under which an electron beam and a volume discharge with a subnanosecond rise time of a voltage pulse are produced in air under atmospheric pressure. It is shown that the electron beam appears in a gas-filled diode at the front of the voltage pulse in ∼0.5 ns, has a half-intensity duration of ≤0.4 ns and an average electron energy of ∼0.6 of the voltage across the gas-filled diode, and terminates when the voltage across the gap reaches its maximum value. The electron beam with an average electron energy of 60 to 80 keV and a current amplitude of ≥70 A is obtained. It is assumed that the electron beam is formed from electrons produced in the gap due to gas ionization by fast electrons when the intensity of the field between the front of the expanding plasma cloud and the anode reaches its critical value. A nanosecond volume discharge with a specific power input of ≥400 MW/cm³, a density of the discharge current at the anode of up to 3 kA/cm², and specific energy deposition of ∼1 J/cm³ over 3 to 5 ns is created.     

Electron Metal-Dielectric Phase Transitions in Semiconductors under Pressure

The effect of uniform pressure on the character of metal-dielectric transitions in compensated weakly- and highly doped semiconductors (WHDCS) is considered. The influence of hybridization of resonance quasilocalized impurity states with band continuum states on the transition is shown. Minimum metallic conductivities in p-CdSnAs₂ are determined for Mott and Anderson transitions. Special features of the metal-dielectric transformation in weakly-doped narrow- and high energy-gap semiconductors are discussed for the case of hydrogen-like impurities. Anderson localization in WHDCS is also considered. Phase diagrams are presented.