Parameters affecting the adhesion strength between a living cell and a colloid probe when measured by the atomic force microscope

In this study, we used the colloid probe atomic force microscopy (AFM) technique to investigate the adhesion force between a living cell and a silica colloid particle in a Leibovitz's L-15 medium (L-15). The L-15 liquid maintained the pharmaceutical conditions necessary to keep the cells alive in the outside environment during the AFM experiment. The force curves in such a system showed a steric repulsion in the compression force curve, due to the compression of the cells by the colloid probe, and an adhesion force in the decompression force curve, due to binding events between the cell and the probe. We also investigated for the first time how the position on the cell surface, the strength of the pushing force, and the residence time of the probe at the cell surface individually affected the adhesion force between a living cell and a 6.84 μm diameter silica colloid particle in L-15. The position of measuring the force on the cell surface was seen not to affect the value of the maximum adhesion force. The loading force was also seen not to notably affect the value of the maximum adhesion force, if it was small enough not to pierce and damage the cell. The residence time of the probe at the cell surface, however, clearly affected the adhesion force, where a longer residence time gave a larger maximum force. From these results, we could conclude that the AFM force measurements should be made using a loading force small enough not to damage the cell and a fixed residence time, when comparing results of different systems.     

pH dependence of friction forces between silica surfaces in solutions

The pH dependence of the friction between a silica particle and a silica wafer was investigated using lateral force microscopy. Measurements were done in the range of 3.6 < or = pH < or = 10.6 and the effect of high loading force was also examined. It is found that the friction is independent of the pH of solutions and increases linearly with the applied load, when the pH is between 3.6 and 8.6. On the other hand, once the pH is above 9.0, the friction becomes extremely small and the dependence on the applied load becomes nonlinear. It is postulated that this transition is due to the development of a gel layer composed of polymer-like segments of silicilic acid anchored on the surface; at the lower applied load, this layer acts as a boundary lubricant between the surfaces, but, at the higher applied load, the entanglements of these segments and more direct contact between two solid surfaces leads to the increase of the friction. The effects found here are expected to play an important role in elucidating the basic mechanism of the planarization process of silica wafers.     

Effects of cleaning procedures of silica wafers on their friction characteristics

Silicon wafers with thermal silicon oxide layers were cleaned and hydrophilized by three different methods: (1) the remote chemical analysis (RCA) wet cleaning by use of ammonia and hydrogen peroxide mixture solutions, (2) water-vapor plasma cleaning, and (3) UV/ozone combined cleaning. All procedures were found to remove effectively organic contaminations on wafers and gave identical characteristics of the contact angle, the surface roughness and the normal force interactions, measured by atomic force microscopy (AFM). However, it is found that wafers cleaned by the RCA method have several times larger friction coefficients than those cleaned by the plasma and UV/ozone methods. The difference was explained by the atomic-scale topological difference induced during the RCA cleaning. This study reveals the lateral force microscopy as a very sensitive method to detect the microstructure of surfaces.     

电荷补偿剂对YAG:Ce荧光粉效率的影响

在研制传统的YAG:Ce3 荧光粉过程中引入NH4F作为助熔剂,BaF2和MgF2作为电荷补偿剂,使得荧光粉的性能得到有效的改善。助熔剂的引入使YAG:Ce3 荧光粉的合成温度由原来的1600℃降低到1340℃左右,这对于降低生产成本有着十分重要的意义。引入BaF2和MgF2作为电荷补偿剂,荧光粉的发光强度得到有效的提高。尤其是引入MgF2后,光致发光强度提高了42%。从XRD谱可以看出,Mg和Ba进入晶格取代了Y。通过对晶格常数的计算,发现Mg的引入可以部分补偿Ce3 掺杂带来的晶格增大。同时电荷补偿剂的引入使荧光粉达到电荷平衡:2AYYx→2Mg′Y→VO¨、2YYx→2Ba′Y V¨O减少了烧制过程中产生的氧空位缺陷的影响,从而减少了由于氧空位带来的无辐射跃迁。另外,以杂质离子的半径和原子的电负性为出发点,对发射光谱的峰位相对移动作了定性的解释。     

Analysis of some large-scale nonlinear stochastic dynamic systems with subspace-EPC method

The probabilistic solutions to some nonlinear stochastic dynamic (NSD) systems with various polynomial types of nonlinearities in displacements are analyzed with the subspace-exponential polynomial closure (subspace-EPC) method. The space of the state variables of the large-scale nonlinear stochastic dynamic system excited by Gaussian white noises is separated into two subspaces. Both sides of the Fokker-Planck-Kolmogorov (FPK) equation corresponding to the NSD system are then integrated over one of the sub...     

Drag reduction by Leidenfrost vapor layers

We demonstrate and quantify a highly effective drag reduction technique that exploits the Leidenfrost effect to create a continuous and robust lubricating vapor layer on the surface of a heated solid sphere moving in a liquid. Using high-speed video, we show that such vapor layers can reduce the hydrodynamic drag by over 85%. These results appear to approach the ultimate limit of drag reduction possible by different methods based on gas-layer lubrication and can stimulate the development of related energy saving technologies.     

时空数据库基态修正模型的扩展

本文分析了几种有代表性的时空数据模型的特点和存在的缺陷,认为在许多时态ＧＩＳ应用领域中（如土地管理信息系统）,采用扩展的基态修正模型较为适宜,提出了采用历史、过程库和现实库对时空过程和时空关系进行描述的思路,并结合开发的商业化的土地产权籍管理系统展示了其在实际应用中的可操作性。     

高能量爆磁压缩电流发生器理论分析与实验研究

根据多分支爆磁压缩电流发生器的电路方程,建立了多分支爆磁压缩电流发生器的等效电路模型,并利用该模型优化设计了一种长600mm、直径120mm、总质量10kg且具有高能量输出的爆磁压缩装置8 7A。实验结果表明,8 7A型装置能在360nH电感性负载上产生峰值为512kA的脉冲电流,储能45.8kJ,能量放大90倍。     

微管换热器流动与传热的实验研究

本文对自制微管换热器的流动与传热性能进行了实验研究。提出了微细圆管换热器管内单相强制对流换热努摩尔数准则式,并与已有相关文献提出的关联式做了对比,结果表明:微管管内换热系数比常规尺度计算公式预测值要高,同时本文分析了微细管内的压力降、摩擦阻力系数f随雷诺数的关系。研究表明微管管内压降、摩擦系数都比常规尺度预测值要高。     

Role of interaction forces in controlling the stability and polishing performance of CMP slurries

Chemical mechanical polishing (CMP) is an essential step in metal and dielectric planarization in multilayer microelectronic device fabrication. In the CMP process it is necessary to minimize the extent of surface defect formation while maintaining good planarity and optimal material removal rates. These requirements are met through the control of chemical and mechanical interactions during the polishing process by engineering the slurry chemistry, particulate properties, and stability. In this study, the performance of surfactant-stabilized silica CMP slurries at high pH and high ionic strengths are investigated with particular emphasis on the particle-particle and particle-substrate interactions. It is shown that for the design of consistently high performing slurries, stability of abrasive particles must be achieved under the dynamic processing conditions of CMP while maintaining sufficient pad-particle-wafer interactions.