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271.
A switching of the S-type in the 20–200 μm thick polycrystalline n-CdTe:In layers with resistance of 103–106 Ω·cm is studied. The electric instability in the layers is found to be due to the electron-thermal breakdown mechanism. The dependence of the switching threshold parameters on the intensity of exposure can be used for fabrication of infrared-radiation controlled electric switches on the basis of n-CdTe:In layers. __________ Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 6, pp. 28–30, June, 2005.  相似文献   
272.
Hetero‐bimetallic Fe(II) alkoxide/aryloxides were evaluated as initiators for the ring‐opening polymerization of rac‐lactide. [(THF)NaFe(OtBu)3]2 ( 1 ) and [(THF)4Na2Fe(2,6‐diisopropylphenolate)4] ( 2 ) (THF = tetrahydrofuran) both polymerized lactide efficiently at room temperature, with complex 1 affording better control over the molecular weight parameters of the resultant polymer. At conversions below 70%, a linear increase in molecular weight with conversion was observed, indicative of a well‐controlled polymerization process. Complex 2 is the first example of a dianionic Fe(II) alkoxide and has been structurally characterized to reveal a distorted square planar FeO4 array in which both Na counterions bridge two aryloxide ligands and are further complexed by two THF ligands. © 2003 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 41: 3798–3803, 2003  相似文献   
273.
274.
The results of calculations of the elastic scattering cross section of positrons on noble gas and alkali atoms are presented. The calculations are performed within the one-electron Hartree-Fock approximation with multielectron correlations in the so-called random phase approximation with exchange taken into account. Virtual positronium formation is taken into account and proved to be very important. Arguments are presented that the positron polarization potential is repulsive for alkali atoms. The results obtained are in a reasonable agreement with experiment and with some previously reported calculations.  相似文献   
275.
The surface of hydrogen-sensitive GaAs Schottky diodes is modified by nonpolishing etching and by producing quantum wells and quantum dots in the space-charge region of the semiconductor. The sensitivity to hydrogen is found to increase by a factor of 8–37 after the etching and by two or three orders of magnitude after the introduction of quantum wells and dots. It is shown that the increased sensitivity is associated with the lowering of the barrier at the Pd/GaAs interface, the retardation of hydrogen diffusion into GaAs due to the presence of strained quantum-size layers, and an increase in the recombination current. The presence of the recombination component is supported by luminescence from the quantum wells and quantum dots, as well as from the GaAs substrate. The etch composition is shown to be a decisive factor in raising the sensitivity.  相似文献   
276.
In this paper we consider the numerical approximation of steady and unsteady generalized Newtonian fluid flows using divergence free finite elements generated by the Powell–Sabin–Heindl elements. We derive a priori and a posteriori finite element error estimates and prove convergence of the method of successive approximations for the steady flow case. A priori error estimates of unsteady flows are also considered. These results provide a theoretical foundation and supporting numerical studies are to be provided in Part II. Copyright © 2003 John Wiley & Sons, Ltd.  相似文献   
277.
New radiative lifetime measurements based on time-resolved laser-induced fluorescence techniques are reported for 18 even-parity levels belonging to the 4f5d26p and 4f 25d 2 configurations of Ce I and 6 even-parity levels belonging to the 5d26s, 4f5d6p, and 4f6s6p configurations of Ce II. Free neutral and singly ionized cerium atoms were produced by laser ablation. The Ce I and Ce II levels range in energy from 26 545 to 29 102 cm-1, and 42 573 to 48 152 cm-1, respectively. Received 25 September 2002 Published online 4 March 2003  相似文献   
278.
A system of Abrikosov vortices in a quasi-two-dimensional HTSC plate is considered for various periodic lattices of pinning centers. The magnetization and equilibrium configurations of the vortex density for various values of external magnetic field and temperature are calculated using the Monte Carlo method. It is found that the interaction of the vortex system with the periodic lattice of pinning centers leads to the formation of various ordered vortex states through which the vortex system passes upon an increase or a decrease in the magnetic field. It is shown that ordered vortex states, as well as magnetic field screening processes, are responsible for the emergence of clearly manifested peaks on the magnetization curves. Extended pinning centers and the effect of multiple trapping of vortices on the behavior of magnetization are considered. Melting and crystallization of the vortex system under the periodic pinning conditions are investigated. It is found that the vortex system can crystallize upon heating in the case of periodic pinning.  相似文献   
279.
280.
In his recent series of lectures, Prof. B. I. Plotkin discussed geometrical properties of the variety of associativeK-algebras. In particular, he studied geometrically noetherian and logically noetherian algebras and, in this connection, he asked whether there exist uncountably many simpleK-algebras with a fixed finite number of generators. We answer this question in the affirmative using both crossed product constructions and HNN extensions of division rings. Specifically, we show that there exist uncountably many nonisomorphic 4-generator simple Ore domains, and also uncountably many nonisomorphic division algebras having 2 generators as a division algebra. The first author is grateful to Professor B. I. Plotkin for communicating this problem to him and for stimulating conversations.  相似文献   
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