Analysis of the charge transfer mechanisms responsible for the current-voltage characteristics of Ca<Subscript>4</Subscript>Ga<Subscript>2</Subscript>S<Subscript>7</Subscript>: Eu<Superscript>3+</Superscript> single crystals

The current-voltage characteristics of Ca₄Ga₂S₇: Eu³⁺ single crystals are measured for the first time, and the processes affecting these characteristics are analyzed theoretically. It is demonstrated that Ca₄Ga₂S₇: Eu³⁺ single crystals are high-resistance semiconductors with a resistivity of ～10⁹ Ω cm and a relative permittivity of 10.55. The electrical properties of the studied materials are governed by traps with activation energies of 0.13 and 0.19 eV and a density ranging from 9.5×10¹⁴ to 2.7×10¹⁵ cm^?3. The one-carrier injection is observed in weak electric fields. In electric fields with a strength of more than 4×10³ V/cm, traps undergo thermal field ionization according to the Pool-Frenkel mechanism. At low temperatures and strong fields (160 K and 5×10⁴ V/cm), the electric current is most likely due to hopping conduction by charge carriers over local levels in the band gap in the vicinity of the Fermi level.     

Semidomains and Metabelian Product of Metabelian Lie Algebras

This article is the fourth part of the series of papers whose aim is the construction of algebraic geometry over metabelian Lie algebras. __________ Translated from Sovremennaya Matematika i Ee Prilozheniya (Contemporary Mathematics and Its Applications), Vol. 14, Algebra, 2004.     

Mechanism of formation of highly conductive layer on ZnO crystal surface

The mechanism of formation of a thin highly conductive layer, which is known to be present on ZnO surface, has been proposed. This process has been assumed to consist in accumulation of mobile shallow donors at crystal surface due to their drift in band-bending electric field caused by adsorbed oxygen. Experimental results that confirm this mechanism have been obtained.     

Statistical Analysis of the Effect of Mineral Admixtures on the Strength of the Interfacial Transition Zone

Microscopic evidence indicates that the thickness of the interfacial transition zone (ITZ) between the aggregate and the cement paste is modified when mineral admixtures partially replace portland cement. Unfortunately, there is limited information on the significance of these microscopic modifications to the mechanical properties of the ITZ. This research reports experimental results on the shear and tensile strength of the ITZ as affected by the addition of the following mineral admixtures: silica fume, fly ash, and natural pozzolan. Statistical analysis was used to identify the significant parameters affecting the tensile and shear strength of the ITZ. Experimental results indicate that not only does the incorporation of silica fume and fly ash increase the strength of the ITZ, these mineral admixtures have a greater influence on the strength increase of the ITZ than in the strength increase of the cement paste.     

Recyclization of Products Formed by Addition of 5-Hydrazino-2-phenyl-1,3-oxazoles Functionally Substituted in 4-Position to Aryl Isothiocyanates

Russian Journal of General Chemistry -     

Photon production in a dense medium

On the basis of diagram formalism for two-particle Green functions, the bremsstrahlung of charged particles interacting in a dense medium is investigated. In the case of production of soft photons, exact expressions for two-particle Green functions corresponding to the process of particle bremsstrahlung in the substance are obtained. The Green functions found are fully determined by the set of closed irreducible diagrams. It is shown that, in the case of radiation in a sufficiently dense medium in a far long-wave region of the spectrum, the coherent multiple particle scattering results in an additional (as compared that reported earlier in [1–13]) suppression of the bremsstrahlung photon yield.     

Damping of coupled phonon-plasmon modes

The effect of free carriers on the dispersion and damping of coupled phonon-plasmon modes is considered in the long-wave approximation. The electron and phonon scattering rate, as well as Landau damping, is taken into account.