Electrochemical studies on novel films consisting of phosphorus-doped multi-walled carbon nanotubes

Ionics - Films consisting of phosphorus-doped multi-walled carbon nanotubes (further denoted as P-MWCNTs) were fabricated by means of chemical vapor deposition technique with decomposition of...     

“Step-up” versus “step-down” scattering asymmetry in the neutralization of H on free-electron vicinal metal surfaces

The charge transfer between H⁻ and a free-electron vicinal metallic surface is studied using a wave-packet propagation method. We apply a statistical Thomas-Fermi-von Weizsäcker model with a local density approximation for the exchange-correlation energy to compute the ground-state electronic structure of the substrate. The long-range image charge effects in the electron transfer are included on a phenomenological level. We obtain the ion-survival probability from a rate equation for a set of realistic scattering trajectories of projectiles that are incident with a kinetic energy of 50 eV. Our calculations reveal a pronounced substrate orientation dependence of the charge transfer dynamics expressed in a “left-right” (or “step-up-step-down”) scattering asymmetry in the final ion-survival probability, which is caused by an enhancement of electron loss on the outgoing part of those ion trajectories which approach steps from below.     

光学特异材料的设计

In this contribution we review our latest achievements of combined experimental and theoretical studies to tailor the properties of optical metamaterials（MMs） at will. We give three examples of metamaterial designs that have been realized by means of electron-beam lithography and whose spectroscopic characteristics have been comprehensively investigated. In every case, our experiments are complemented by rigorous numer ical simulations. Particular emphasis is put on the significance of such tailored effective properties of optical MMs     

Non-Gaussian corrections to higgs mass in autonomousλφ 3+1 4

Recent calculations in one-loop and Gaussian approximation, using the so-called autonomous renormalization scheme, indicate a comparatively massive, narrow Higgs excitation at about 2 TeV. Here I show that this result persists in the framework of a post-Gaussian variational approximation for the pureO(N)-symmetric ⁴-theory forN>1. The method is based on nonlinear transformations of path-integral variables, and the optimization amounts to a Schwinger-Dyson-type summation of diagrams. In the case ofO(4), for example, I findM _Higgs=2.3 TeV, compared with 1.9 TeV and 2.1 TeV in one-loop and Gaussian approximation, respectively. My results are also consistent with the Consoli-Stevenson conjecture that the Gaussian and one-loop results forN=1 are exact and may even hold for generalN.     

Structural relaxation and aging scaling in the Coulomb and Bose glass models

We employ Monte Carlo simulations to study the relaxation properties of the two-dimensional Coulomb glass in disordered semiconductors and the three-dimensional Bose glass in type-II superconductors in the presence of extended linear defects. We investigate the effects of adding non-zero random on-site energies from different distributions on the properties of the correlation-induced Coulomb gap in the density of states (DOS) and on the non-equilibrium aging kinetics highlighted by the density autocorrelation functions. We also probe the sensitivity of the system’s equilibrium and non-equilibrium relaxation properties to instantaneous changes in the density of charge carriers in the Coulomb glass or flux lines in the Bose glass.     

New Cyclic and Polycyclic Ring Systems Containing Group 14 (Si,Ge, Sn) and 16 (S,Se, Te) Elements

The reactions of Me₂MCl₂ (M = Si, Ge, Sn), Si₂Me₄Cl₂, Si₂Me₂Cl₃, Si₂Me₂Cl₄ and CH₂(SiCl₂Me)₂, and suitable mixtures thereof, with H₂S / NEt₃ and Li₂E (E = Se, Te) have been investigated and lead to a variety of new group 14 chalcogenide systems.     

Trapped in Misbelief for Almost 40 Years: Selective Synthesis of the Four Stereoisomers of Mefloquine

Here we report the synthesis of all four stereoisomers of mefloquine. Mefloquine (Lariam) is an important anti‐malaria drug that is applied as a racemate of the erythro form. However, the (?)‐isomer induces psychosis, while the (+)‐enantiomer does not have this undesired side effect. There are six syntheses of which five lead to the wrong enantiomer without the authors of these syntheses noting that they had synthesized the wrong compound. At the same time physical chemistry investigations had assigned the absolute configuration correctly and the last enantioselective synthesis that took these results into account delivered the correct absolute configuration. Since various synthetic approaches failed to provide the correct stereoisomers in previous syntheses, we submit here a synthetic approach with a domino Sonogashira‐6π‐electrocyclisation as key step that confirmed synthetically the correct absolute configuration of all four isomers.     

Synthesis and Optoelectronic Properties of a Quinoxalino-Phenanthrophenazine (QPP) Extended Tribenzotriquinacene (TBTQ)

A six-step synthesis towards a tribenzotriquinacene (TBTQ) bearing three quinoxalinophenanthrophenazine (QPP) units is presented. The optoelectronic properties are investigated and the effect of the three-dimensional arrangement of the individual QPP planes is examined using optical spectroscopy, electrochemical analysis and quantum-chemical calculations.     

The Rayleigh law in silicon doped hafnium oxide ferroelectric thin films

A wealth of studies have confirmed that the low‐field hysteresis behaviour of ferroelectric bulk ceramics and thin films can be described using Rayleigh relations, and irreversible domain wall motion across the array of pining defects has been commonly accepted as the underlying micro‐mechanism. Recently, HfO₂ thin films incorporated with various dopants were reported to show pronounced ferroelectricity, however, their microscopic domain structure remains unclear till now. In this work, the effects of the applied electric field amplitude, frequency and temperature on the sub‐coercive polarization reversal properties were investigated for 10 nm thick Si‐doped HfO₂ thin films. The applicability of the Rayleigh law to ultra‐thin ferroelectric films was first confirmed, indicating the existence of a multi‐domain structure. Since the grain size is about 20–30 nm, a direct observation of domain walls within the grains is rather challenging and this indirect method is a feasible approach to resolve the domain structure. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)