Dispersive anisotropic ballistic phonon propagation in [100] GaAs

We report experimental observations of the phonon focusing pattern in [100] GaAs using low temperature electron beam scanning for phonon generation. The typical dispersive effects for high-frequency phonons expected from the calculations by Tamura have clearly been observed using PbIn tunnel junctions for phonon detection. The quantitative comparison of our experimental results with the frequency dependent calculations by Tamura allowed to determine the dominant phonon frequencies contributing to the detector signal in our different experiments. Above the temperature of the -point the dominant phonon frequencies appear to be shifted considerably to lower values, which could be explained by a heating effect in the liquid-He layer adjacent to the tunnel junction detector. By comparing the observed magnitude of the detector signal with different theoretical treatments of the detector response, we have found satisfactory agreement for a model where the perturbation due to the high-frequency phonons is restricted to the base electrode of the detector reached first by the phonons following their passage through the crystal.     

Structure and Magnetic Properties of Ce3Ge0.66In4.34 and Ce11Ge4.74In5.26

New indides Ce₃Ge_0.66In_4.34 and Ce₁₁Ge_4.74In_5.26 were synthesized from the elements by arc‐melting and subsequent annealing at 870 K. Single crystals were grown through special annealing procedures in sealed tantalum tubes in a high‐frequency furnace. Both compounds were investigated on the basis of X‐ray powder and single crystal data: I4/mcm, La₃GeIn₄ type, a = 848.8(1), c = 1192.0(2) pm, Z = 4, wR2 = 0.0453, 499 F² values, 17 variables for Ce₃Ge_0.66In_4.34 and I4/mmm, Sm₁₁Ge₄In₆ type (ordered version of the Ho₁₁Ge₁₀ type), a = 1199.3(2), c = 1662.0(3) pm, wR2 = 0.0507, 1217 F² values, 41 variables for Ce₁₁Ge_4.74In_5.26. The Ce₃Ge_0.66In_4.34 structure shows a mixed Ge/In occupancy on the 4c Wyckoff position. This site is octahedrally coordinated by cerium atoms. These octahedra share all edges, leading to a three‐dimensional network. The latter is penetrated by a two‐dimensional indium substructure which consists of flattened tetrahedra at In–In distances of 291 and 300 pm. The Ce₁₁Ge_4.74In_5.26 structure contains three crystallographically independent germanium sites. The latter are coordinated by eight or nine cerium neighbors. These CN8 and CN9 polyhedra are condensed to a complex network which is penetrated by a three‐dimensional indium network with In–In distances of 301–314 pm. The 16m site shows a mixed In/Ge occupancy. Chemical bonding in both compounds is dominated by the p elements. Both ternaries studied exhibit localized magnetism due to the presence of Ce³⁺ ions. The compound Ce₃GeIn₄ remains paramagnetic down to 1.72 K, whereas Ce₁₁Ge₄In₆ orders ferromagnetically at T_C = 7.5 K.