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11.
4-(4′-Dioctylaminocarbonylbiphenyloxy) phthalonitrile was synthesized from 4-(4′-carboxybiphenyloxy)phthalonitrile and dioctylamine
in the presence of Et3N. Metallophthalocyanines (Zn, Co and Cu) substituted with four dioctylaminocarbonyl biphenyloxy groups on the peripheral
positions were prepared from 4-(4′-dioctylaminocarbonylbiphenyloxy)phthalonitrile and the corresponding divalent metal salts
(Zn(CH3COO)2, CoCl2 and CuCl2). The new phthalocyanines are soluble in common organic solvents. These compounds were characterised by 1H-NMR, 13C-NMR, FT-IR, UV-Vis and mass spectroscopies. 相似文献
12.
M. Vişinescu 《Zeitschrift fur Physik C Particles and Fields》1982,15(2):121-127
We construct new solutions of the fourdimensional sigma model coupled to the metric tensor field and having an internalO invariance. Our solutions interpolate continuously between the known instanton and meron solutions depending upon a parameterf. We find that the typical domain for the instantons is 2<f≦3 while for the merons is 0≦f≦2. 相似文献
13.
In this study, electron paramagnetic resonance of γ-irradiated single crystals of N-Trifluoroacetyl-α-amino isobutyric acid (F3Ac-Aib-OH) was investigated at room temperature and analyzed for different orientations of the crystal in the magnetic field. The paramagnetic species in N-Trifluoroacetyl-α-aminoisobutyric acid was attributed to the ?F2-R radical (R= CONHC(CH3)COOH). Hyperfine coupling constants and g value were also determined. In addition, the single crystal of F3Ac-Aib-OH was UV-irradiated and paramagnetic species formed was studied at room temperature. The effects of gamma irradiation on fluoroamino acid and stability were discussed. 相似文献
14.
Özlem Yeşiltaş 《Central European Journal of Physics》2013,11(12):1674-1679
In this paper, we have provided a matrix Hamiltonian model for honeycomb lattices and subsequently obtained the dispersion relation. Furthermore, we have constructed the C operator for the given non-Hermitian Hamiltonian model. The quadratic surfaces are sketched and the quantum Brachistochrone problem is discussed for the given honeycomb lattice model. 相似文献
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For a scalar evolution equation ut = K(t, x, u, ux, . . . , u2m+1) with m ≥ 1, the cohomology space H1,2() is shown to be isomorphic to the space of variational operators and an explicit isomorphism is given. The space of symplectic operators for ut = K for which the equation is Hamiltonian is also shown to be isomorphic to the space H1,2() and subsequently can be naturally identified with the space of variational operators. Third order scalar evolution equations admitting a first order symplectic (or variational) operator are characterized. The variational operator (or symplectic) nature of the potential form of a bi-Hamiltonian evolution equation is also presented in order to generate examples of interest. 相似文献
19.
In this paper, we study the difference spaces \({\mathcal {F}}(\varDelta )\), \({\mathcal {F}}_0(\varDelta )\), \({\mathcal {[F]}}(\varDelta )\) and \({\mathcal {[F]}}_0(\varDelta )\) of double sequences obtained as the domain of four-dimensional backward difference matrix \(\varDelta \) in the spaces \({\mathcal {F}}\), \({\mathcal {F}}_{0}\), \({\mathcal {[F]}}\) and \({\mathcal {[F]}}_{0}\) of almost convergent, almost null, strongly almost convergent and strongly almost null double sequences; respectively. We examine general topological properties of those spaces and give some inclusion theorems. Furthermore, we deal with their dual spaces.
相似文献20.
Multi‐crystalline silicon solar cells with metal‐assisted nano‐texturing using HNO3 as hole injection agent 下载免费PDF全文
In this study, metal‐assisted etching (MAE) with nitric acid (HNO3) as a hole injecting agent has been employed to texture multi‐crystalline silicon wafers. It was previously proven that addition of HNO3 enabled control of surface texturing so as to form nano‐cone shaped structures rather than nanowires. The process parameters optimized for optically efficient texturing have been applied to multi‐crystalline wafers. Fabrication of p‐type Al:BSF cells have been carried out on textured samples with thermal SiO2/PECVD‐SiNx stack passivation and screen printed metallization. Firing process has been optimized in order to obtain the best contact formation. Finally, jsc enhancement of 0.9 mA/cm2 and 0.6% absolute increase in the efficiency have been achieved. This proves that the optimized MAE texture process can be successfully used in multi‐crystalline wafer texturing with standard passivation methods.