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91.
Lancaster G.P.T. Häffner H. Wilson M.A. Becher C. Eschner J. Schmidt-Kaler F. Blatt R. 《Applied physics. B, Lasers and optics》2003,76(8):805-808
We present a scheme for employing a violet extended-cavity diode laser in experiments with single, trapped ions. For this the grating-stabilised laser is spatially and spectrally filtered and referenced to a Fabry–Pérot cavity. We measure an upper limit to the line width by observing a 305-kHz FWHM beat note with the second harmonic of a titanium sapphire laser. The laser is subsequently used to optically cool a single 40Ca+ ion close to the Doppler limit. PACS 03.67.Lx; 32.80.Pj; 42.55.Px 相似文献
92.
B. G. Tagiev U. F. Kasumov N. N. Musaeva R. B. Dzhabbarov 《Physics of the Solid State》2003,45(3):426-432
The current-voltage characteristics of Ca4Ga2S7: Eu3+ single crystals are measured for the first time, and the processes affecting these characteristics are analyzed theoretically. It is demonstrated that Ca4Ga2S7: Eu3+ single crystals are high-resistance semiconductors with a resistivity of ~109 Ω cm and a relative permittivity of 10.55. The electrical properties of the studied materials are governed by traps with activation energies of 0.13 and 0.19 eV and a density ranging from 9.5×1014 to 2.7×1015 cm?3. The one-carrier injection is observed in weak electric fields. In electric fields with a strength of more than 4×103 V/cm, traps undergo thermal field ionization according to the Pool-Frenkel mechanism. At low temperatures and strong fields (160 K and 5×104 V/cm), the electric current is most likely due to hopping conduction by charge carriers over local levels in the band gap in the vicinity of the Fermi level. 相似文献
93.
Dinesh Topwal U. Manju Sugata Ray S. Raj D. D. Sarma S. R. Krishnakumar M. Bertolo S. La Rosa G. Cautero 《Journal of Chemical Sciences》2006,118(1):87-92
Disordered Sr2FeMoO6 shows a drastic reduction in saturation magnetization compared to highly ordered samples, moreover magnetization as a function
of the temperature for different disordered samples shows qualitatively different behaviours. We investigate the origin of
such diversity by performing spatially resolved photoemission spectroscopy on various disordered samples. Our results establish
that extensive electronic inhomogeneity, arising most probably from an underlying chemical inhomogeneity in disordered samples, is
responsible for the observed magnetic inhomogeneity. It is further pointed out that these inhomogeneities are connected with
composition fluctuations of the type Sr2Fe1+x
Mo1-x
O6 with Fe-rich (x > 0) and Mo-rich (x < 0) regions.
Dedicated to Prof J Gopalakrishnan on his 62nd birthday. 相似文献
94.
95.
S K Samanta U C Gupta R K Sharma 《The Journal of the Operational Research Society》2007,58(3):368-377
This paper investigates a discrete-time single-server finite-buffer queueing system with multiple vacations in which arrivals occur according to a discrete-time renewal process. Service and vacation times are mutually independent and geometrically distributed. We obtain steady-state system length distributions at prearrival, arbitrary and outside observer's observation epochs under the late arrival system with delayed access and early arrival system. The analysis of actual waiting-time for both the systems has also been carried out. The model has potential application in high-speed computer network, digital communication systems and other related areas. 相似文献
96.
Gunhild U. von Oertzen 《Journal of Physics and Chemistry of Solids》2007,68(3):324-330
Ab initio density functional calculations (plane wave GGA, CASTEP) were performed to determine the effect of O deficiency on the electronic structure of rutile, TiO2. O deficiency was introduced through either the removal of O or the insertion of interstitial Ti atoms. At physically realistic concentrations of O vacancies in the rutile lattice (i.e. 25% and less) O deficiency results in the population of the bottom of the conduction band, the location of the Ti 3d orbitals in the pure structure, increasingly with increasing vacancy concentration. We propose that this could be confused with the formation and population of gap states especially where O vacancies occur in isolated positions in the lattice. In contrast, Ti interstitials introduce a defect state into the energy gap, without an overall reduction in the size of the energy gap. O vacancies result in a spin polarized solution, whereas Ti interstitials do not. 相似文献
97.
Kentsch U. Zschornack G. Grossmann F. Ovsyannikov V. P. Ullmann F. 《Hyperfine Interactions》2003,148(1-4):237-242
Hyperfine Interactions - It is well known that many reinforced concrete structures are at risk of deterioration due to chloride ion contamination of the concrete or atmospheric carbon dioxide... 相似文献
98.
99.
It is well known that the mathematical models provide very important information for the research of human immunodeficiency virus-type 1 and hepatitis C virus (HCV). However, the infection rate of almost all mathematical models is linear. The linearity shows the simple interaction between the T cells and the viral particles. In this paper, we consider the classical mathematical model with saturation response of the infection rate. By stability analysis we obtain sufficient conditions on the parameters for the global stability of the infected steady state and the infection-free steady state. We also obtain the conditions for the existence of an orbitally asymptotically stable periodic solution. Numerical simulations are presented to illustrate the results. 相似文献
100.
P.V.V. Jayaweera P.K.D.D.P. Pitigala M.K.I. Seneviratne A.G.U. Perera K. Tennakone 《Infrared Physics & Technology》2007,50(2-3):270-273
All electronic devices are plagued with 1/f noise originating from many causes. The most important factors contributing to 1/f noise in a semiconductor is believed to be recombination of carriers and their trapping at defects and impurity sites. Adsorption of moisture and electron acceptor molecules enhances the intensity of 1/f noise. Amazingly, some molecular species that strongly chelate to the semiconductor surface, suppress 1/f noise owing to passivation of the recombination sites. Thus in addition to sensitization, the dye adsorbed on the nanocrystallites plays a key role in mitigation of recombinations. For this reason dye-sensitized heterojunctions could also find application as low noise NIR photon detectors. Experiments conducted with oxide semiconductors (TiO2, ZnO, SnO2) indicate that the mode of binding of dyes at specific sites determines the extent to which the recombination and 1/f noise are suppressed. The transport of electrons in a nanocrystalline matrix is diffusive with a diffusion coefficient D depending on the trapping and detrapping processes. Thus passivation of trapping sites by the adsorbed dye is expected to increase the response time which can be expressed as τ L2/D, where L = thickness of the nanocrystalline film. Measurement techniques and construction of a dye-sensitized NIR photon detector will be discussed. 相似文献