InGaAs单光子探测器传感检测与淬灭方式

针对InGaAs单光子雪崩光电二极管(SPAD)的光电感应特性,研究了基于门控主动式淬灭的SPAD动态偏置控制和电路实现的策略.采用门控主动淬灭控制可降低淬灭时间,有效抑制暗计数和后脉冲效应.接口感应检测电路采用标准互补金属氧化物半导体(CMOS)工艺进行制造,而SPAD则采用非标准CMOS工艺.利用铟柱互连混合封装工艺实现SPAD与感应接口电路的协同工作.在低温-30?C的条件下,实现了SPAD光触发雪崩电流信号的提取和快速淬灭.研究了感应电阻和临界检测电压对传感检测电性能的影响,并采用简单电路结构实现状态检测,实测得到的SPAD恢复时间、传输延时分别为575,563 ps,淬灭时间为1.88 ns,满足纳秒级精度传感检测应用的需要.     

Effect of hydrogen introduced by channelling implantation on the microstructures in silicon wafers

High-resolution transmission electron microscopy has been employed to study the platelet defects before annealing and the extended defects generated by annealing in the channelling-implanted silicon wafers. It has been found that there apparently appear platelet defects of quite great size and spacing at the maximum projected range of ions (R _max). Additionally, the cracks induced by annealing at 550 °C are generated around R _max instead of the average projected range of ions (R _p) as it is in the non-channelling-implanted samples. Moreover, after annealing at 1000 °C, cracks without branches and cavities arranging in a single array, different from the forked cracks and cavities arranged in several arrays in the non-channelling-implanted samples, are observed in the channelling-implanted silicon wafers. It is suggested that those special microstructure characteristics are ascribed to the channelling effect of implanted hydrogen ions.     

Implementation of a Nonzero-order Joint Transform Correlator Using Interferometric Technique

The implementation of a nonzero-order joint transform correlator using the double port Mach-Zehnder interferometric technique is proposed and demonstrated. This approach provides on-line processing for directly removing the zero-order components of a joint power spectrum in one step and performs the nonzero-order optical correlation. Experimental results are presented and discussed.     

Multiple Polarization Encoding for Gray Image Encryption Based on Liquid Crystal Exclusive OR Logic

This work proposes and demonstrates the feasibility of gray image encryption using multiple polarization encoding, in which the cascaded twisted nematic liquid crystal devices sandwiched between a crossed polarizer pair are used to implement exclusive OR (XOR) logical encryption and decryption. The polarization encoding scheme provides a multichannel XOR logic operation to secure bit-plane images derived from a gray image, according to the adiabatic following properties of twisted nematic liquid crystal devices. Experimental data reveal that the multiple polarization encoding schemes for gray image encryption and decryption are performed with acceptable image quality by selecting appropriate polarization orientation and modulation conditions. Both analytic and experimental results are presented and discussed.     

Mn（Ⅱ）,Co（Ⅱ）与HSA相互作用的荧光光谱研究

用荧光光谱法研究了生理ｐＨ和等离子点（ｐＨ＝５．３０）时Ｍｎ（Ⅱ）、Ｃｏ（Ⅱ）与ＨＳＡ的相互作用。根据Ｆｏｒｓｔｅ非辐射能量转移理论,得到了不同ｐＨ时Ｍｎ（Ⅱ）、Ｃｏ（Ⅱ）在ＨＳＡ中的第一强结合位置与Ｔｒｐ－２１４残基间的距离。这一结果远大于文献报道值,根据Ｍｎ（Ⅱ）、Ｃｏ（Ⅱ）在ＨＳＡ中的结合部位及ＨＳＡ的畴结构对这一显著差异进行了讨论。     

Growth,spectroscopic and laser properties of Yb<Superscript>3<Emphasis Type="Bold">+</Emphasis></Superscript>-doped GdAl<Subscript>3</Subscript>(BO<Subscript>3</Subscript>)<Subscript>4</Subscript> crystal: a candidate for infrared laser crystal

Yb³⁺:GdAl₃(BO₃)₄ (hereafter Yb³⁺:GAB) crystals with large sizes and good optical quality have been grown by the top-seed solution growth (TSSG) method. The polarized absorption and emission spectra have been investigated at room temperature. For the σ-polarization, the intensities of both absorption and emission spectra are stronger than those for the π-polarization, the σ-absorption cross section of Yb³⁺ in GAB being 3.43×10^-20 cm² at 977 nm, and the σ-emission cross section being 0.98×10^-20 cm² at 1045 nm. The fluorescence lifetime of the ² F _5/2→² F _7/2 transition was measured to be 800 μs in the 5% doped sample used for our laser experiments, 993 μs in a 10% doped sample and 569 μs in a 0.5% doped sample. The laser parameters were estimated as: β_min=0.022, I_sat=10.4 kW/cm² and I_min=0.23 kW/cm². About 0.4 W laseroutput at the wavelength of 1043 nm was achieved when the Yb³⁺:GAB crystal was pumped by a 974 nm laser diode, with 27.4% slope efficiency. PACS 42.55.-f; 42.70.Hj; 78.20.-e; 81.10.Dn     

Application of a broadband blue laser diode to trace NO2 detection using off-beam quartz-enhanced photoacoustic spectroscopy

We applied for the first time, to our knowledge, broadband off-beam quartz-enhanced photoacoustic spectroscopy (BB-OB-QEPAS) to trace NO2 detection using a broadband blue laser diode centered at 450?nm. A detection limit of 18?ppbv (parts in 10(9) by volume) for NO2 in N2 at atmospheric pressure was achieved with an average laser power of 7?mW at a 1?s integration time, which corresponds to a 1?σ normalized noise equivalent absorption coefficient of 4.1×10(-9) cm(-1)?W=Hz(1=2). An Allan variance analysis was performed to investigate the long-term stability of the BB-OB-QEPAS-based NO2 sensor.     

Implementation of a novel two-attractor grid multi-scroll chaotic system

This paper proposed a method of generating two attractors in a novel grid multi-scroll chaotic system.Based on a newly generated three-dimensional system,a two-attractor grid multi-scroll attractor system can be generated by adding two triangular waves and a sign function.Some basic dynamical properties,such as equilibrium points,bifurcations,and phase diagrams,were studied.Furthermore,the system was experimentally confirmed by an electronic circuit.The circuit simulation results and numerical simulation results verified the feasibility of this method.     

Elastic-plastic analyses on the residual stresses and curvature of the film/substrate bilayer system

During thermal cycling, the residual stresses are often generated in the film/substrate bilayer due to the material mismatch between the substrate and the film. If the thickness of the film is relatively high, the thermal residual stresses in it may be of different signs. When the film is subjected to elastic-plastic deformation, two plastic zones with different thicknesses may be generated in the film at a significantly high temperature difference. In this paper, a theoretical model which reflects the complete history of thermal residual stresses and curvatures in the elastoplastic film/substrate bilayer system is developed. Solutions are derived to estimate the residual stresses and curvature in the film as functions of temperature difference. The case of Al/Si system is used to illustrate the implementation of this model. Results show that the critical temperature difference at which the second plastic zone near the film surface is generated near the Al film surface is dependent on the film thickness. The strain hardening of the film has an obvious influence on the magnitude of residual stresses within the film at high temperature difference.