Observation of a charmoniumlike state produced in association with a J/psi in e+e- annihilation at sqrt[s] approximately equal to 10.6 GeV

We report the first observation of a charmoniumlike state recoiling from the J/psi in the inclusive process e+e- -->J/psi+anything at a mass of (3.943+/-0.006+/-0.006) GeV/c{2}. We also observe the decay of this state into D*D[over ] and determine its intrinsic width to be less than 52 MeV/c{2} at the 90% C.L. These results are obtained from a 357 fb{-1} data sample collected with the Belle detector near the Upsilon(4S) resonance, at the KEKB asymmetric-energy e+e- collider.     

High-throughput characterization of local conductivity of Nd0.9Ca0.1Ba2Cu3O7−δ thin film by the low-temperature scanning microwave microscope

We developed a scanning microwave microscope (SμM) designed for high-throughput electric-property screening as well as for rapid construction of electronic phase diagrams at low temperatures. As a sensor probe, we used a high-Qλ/4 coaxial cavity resonator to which a thin needle with ball-tip end was attached. The sensor module was mounted on the low-temperature XYZ stage, which allowed us to map out the change of resonance frequency and quality factor due to the local tip-sample interaction at low temperatures. From the measurements of combinatorial thin films, such as Ti_1−xCo_xO_2−δ and Nd_0.9Ca_0.1Ba₂Cu₃O_7−δ (NCBCO), it was demonstrated that this SμM system has enough performance for the high-throughput characterization of sample conductance under variable temperature conditions.     

Generalization of the second law for a nonequilibrium initial state

We generalize the second law of thermodynamics in its maximum work formulation for a nonequilibrium initial distribution. It is found that in an isothermal process, the Boltzmann relative entropy (H-function) is not just a Lyapunov function but also tells us the maximum work that may be gained from a nonequilibrium initial state. The generalized second law also gives a fundamental relation between work and information. It is valid even for a small Hamiltonian system not in contact with a heat reservoir but with an effective temperature determined by the isentropic condition. Our relation can be tested in the Szilard engine, which will be realized in the laboratory.     

Fabrication of BDD quantum node switches on embedded GaAs quantum wires grown by selective MBE

In view of applications to hexagonal binary decision diagram (BDD) LSIs, a first attempt is made to form quantum BDD node switches on selectively grown (SG) embedded quantum wires (QWRs) by molecular beam epitaxy (MBE). SG branch switches controlled by a Schottky wrap gate (WPG) were successfully fabricated by MBE growth and subsequent device processing. Gate control characteristics were studied by gate-dependent Shubnikov–de-Haas measurements, and the behavior was found to be similar to that of devices fabricated on wires by etching. The switch exhibited clear conductance quantization at low temperature, and temperature dependence of the voltage slope of conductance jump was clarified. A Y-branch BDD node device using two SG branch switches was successfully fabricated, and realized clear path switching characteristics.     

First Measurement of the Gerasimov-Drell-Hearn Sum Rule for 1H from 0.7 to 1.8 GeV at ELSA

To verify the fundamental Gerasimov-Drell-Hearn (GDH) sum rule for the first time experimentally, we measured the helicity dependent total photoabsorption cross section with circularly polarized real photons and longitudinally polarized nucleons in the photon energy range 0.68-1.82 GeV with the tagged photon facility at ELSA. The experiment was carried out with a 4pi detection system, a circularly polarized tagged photon beam, and a frozen spin polarized proton target. The contribution to the GDH sum rule in this photon energy range is [49.9+/-2.4(stat)+/-2.2(syst)] microb.     

Super AutoDipole

The publicly available package for an automated dipole subtraction, AutoDipole, is extended to include the SUSY dipoles in the MSSM. All fields in the SM and the MSSM are available. The code is checked against the analytical expressions for a simple process. The extended package makes it possible to compute the QCD NLO corrections to SUSY multi-parton processes like the stop pair production plus jets at the LHC.     

Ferromagnetic interaction between spins in amorphous SiGe films

Temperature dependence of the ESR signal intensity in amorphous SiGe films annealed at various temperatures is investigated. As a result, it is found that spins undergo a ferromagnetic interaction and the Curie-Weiss θ in the relation χ = C/ (T-θ) distributes between 40 and 135 K. The ferromagnetic behavior suggests that spins are inhomogeneously distributed and closely located together.     

Efficient deanilidation of phosphoranilidates by the use of nitrites and acetic anhydride

Reagent systems of sodium– and tetrabutylammonium nitrite–acetic anhydride were proved to be extremely efficient for the deanilidation of nucleoside 3′-phosphoranilidates, whose reactions were rapid with the former and instant with the latter. It was further found that the reagent system is applicable to oligonucleotide synthesis provided that the exocyclic amino groups of 2′-deoxyadenosine, 2′-deoxyguanosine, and 2′-deoxycytidine were protected by succinylation.     

Surface state density distribution at vacuum-annealed InP(1 0 0) surface as derived from the rigorous analysis of photoluminescence efficiency

The surface state density distribution N_SS(E) and surface Fermi level E_Fs position on a sequentially ultra-high vacuum-annealed n-InP(1 0 0) sample are investigated using rigorous computer analysis of dependences of the room temperature band-edge photoluminescence efficiency (Y_PL) on the photon flux density (Φ). We have found that the minimum density of a U-shaped N_SS(E) distribution as well as the donor-like surface state density are reduced by one order of magnitude after the annealing at 250 and 300 °C. This can be assigned to the decrease in the disorder in the unintentionally formed InP native oxides. On the other hand, we demonstrate that the annealing simultaneously generates discrete surface states probably due to missing group V element (P) in the interface region which may account for electrical interface instabilities observed in InP-based devices. The results are discussed quantitatively and compared to other reports.