Photochemistry of N-acylimino-isoquinolinium and -quinolinium betaines

The photochemical behavior of N-acyliminoisoquinolinium and -quinolinium betaines has been investigated. In contrast to pyridinium betaines, the principal course of reaction is the 1,2-migration of N-acylamino groups. Substituent effects as well as solvent effects are observed. The results are rationalized in terms of diaziridine intermediates.     

Mono-N-amino salt of benzodiazines and naphthyridines

The mono-N-amino salts of 3-phenylcinnoline, phthalazine, 1-phenylphthalazine, 4-phenylquinazoline, 2-phenylquinoxaline, 1,5- and 1,8-naphthyridines are in high yields prepared by direct N-amination of the parent heterocycles with O-mesitylenesulfonylhydroxylamine. With the one expection of 3-phenylcinnoline, the site of N-amination was determined by mass and nmr spectral techniques. The results indicate that the N-amination occurs preferentially at the least sterically hindered nitrogen atom.     

Outside dislocations generated from phosphorus implanted silicon layers

The growth, movement and nature of outside dislocation, which propagate from heavily phosphorus (>10¹⁵ ions/cm²) implanted (111), (100), and (110) silicon layers into unimplanted outside regions by a compressive strain induced during 1100° C wet O₂ annealing, are investigated using transmission electron microscopy and x-ray diffraction topography. Outside dislocations are formed, mainly on (111) planes., by the glide motion of dislocation networks formed in implanted layers during early annealing. This results in dislocations extending into the unimplanted areas to different degrees, in the order of, from the largest to smallest, (111), (110), and (100) wafers. In (110) wafers, the [001] oriented dislocations in the implanted regions rise to the surface at the implant and unimplant boundary. On the other hand, the [110] dislocations penetrate into the unimplanted region. Two sets of orthogonal 〈110〉 oriented dislocations generated in (100) implanted wafers behave in the same manner as the [001] dislocations in (110) wafers. Some sources of the compressive strain related to the generation of these dislocations are discussed.     

Experimental evidence for the p-d hybridization in the Cd-Ca quasicrystal: origin of the pseudogap

Ca 2p-3d resonant photoemission spectroscopy of a Cd6Ca crystalline approximant unambiguously demonstrates that the low-lying unoccupied 3d levels of calcium are lowered below the Fermi energy by the formation of the approximant, as suggested from electronic structure calculations [Phys. Rev. Lett. 87, 206408 (2001)]]. Moreover, the Ca 3d partial density of states (DOS) obtained near the Fermi energy is in reasonable agreement with theoretical Ca 3d DOS. These results verify the unconventional picture that the origin of the pseudogap in the Cd-based quasicrystals is due to hybridization of the Ca 3d band with the Cd 5p band.     

Local plasticity of Al thin films as revealed by x-ray microdiffraction

Grain-to-grain interactions dominate the plasticity of Al thin films and establish effective length scales smaller than the grain size. We have measured large strain distributions and their changes under plastic strain in 1.5-microm-thick Al 0.5% Cu films using a 0.8-microm-diameter white x-ray probe at the Advanced Light Source. Strain distributions arise not only from the distribution of grain sizes and orientation, but also from the differences in grain shape and from stress environment. Multiple active glide plane domains have been found within single grains. Large grains behave like multiple smaller grains even before a dislocation substructure can evolve.     

Synthesis of 2-substituted 4,5-dihydro-4-oxo-3-furancarboxylates using acylative intramolecular cyclization of sulfonium salts

A simple and efficient synthesis of 4,5-dihydro-4-oxo-3-furancarboxylates using an acylative intramolecular cyclization of sulfonium salts is described. The reaction involved the efficient formation of a mixed anhydride between a linear carboxylic acid and trifluoroacetic anhydride in the presence of N-methylimidazole, followed by the sequential conversion into a highly reactive acylammonium species in situ. This procedure is easily handled, uses readily available inexpensive reagents, and provides a variety of 2-substituted 4,5-dihydro-4-oxo-3-furancarboxylates.     

Photoluminescence measurements in Be-δ-doped back-gated quantum well

We measured the photoluminescence (PL) spectra of a two-dimensional electron system induced in a Be-δ-doped GaAs/AlGaAs quantum well (QW) with a back gate. The electron density is controlled by means of the back-gate voltage. We estimated the electron density using the magneto-optical method and the PL linewidth, and also by undertaking transport measurements. We show that a uniform 2DES as large as 1 mm² is induced by the back-gate operation from 2.5 × 10¹⁰ cm⁻². This experiment indicates that optical measurement with a back-gated QW is advantageous for studying the low-density 2DES.