First synthesis of 1,9-dideoxyforskolin from ptychantin A

1,9-Dideoxyforskolin 2 has been synthesized starting from ptychantin A 3.     

Grinding-induced equimolar complex formation between thiourea and ethenzamide

We prepared and characterized a grinding-induced equimolar complex of thiourea with ethenzamide. When thiourea and ethenzamide were co-ground at a molar ratio of 3 : 1, new powder X-ray diffraction (PXRD) peaks were observed in addition to PXRD peaks of thiourea crystals. The optimum stoichiometry of the new structure was confirmed as 1 : 1 mol/mol. Effect of grinding time on the thiourea-ethenzamide equimolar complex formation was investigated by using PXRD, differential scanning calorimetry and Fourier transform infrared spectroscopy. The equimolar crystal structure was confirmed by X-ray diffraction measurements of the single crystal which was recrystallized from ethanol. It was found that the intermolecular hydrogen bond formations between thiourea and ethenzamide molecules contributed to the equimolar complex formation. The complex formation was not observed in the cases where benzamide, salicylamide or 3-ethoxybenzamide was co-ground with thiourea. 2-Alcoxyl benzamide structures should be required for the grinding-induced equimolar complex formation with thiourea.     

Relaxations of selenium in crystalline and amorphous states

Complex shear modulus at 33 kc./sec. is measured at temperatures of ?150–150°C. for amorphous selenium and crystalline selenium with different crystallinities. The dielectric relaxation at 10 kc./sec. to 3 kc./sec. to 3 Mc./sec. is observed at temperatures of ?32–25°C. for iodine-doped crystalline selenium. It is concluded from the results of this study and of others' that selenium exhibits four relaxations, α, β γ, and δ, in order of descending temperature. The β relaxation is observed only in the amorphous sample above the glass temperature and is assigned to the primary relaxation. The α, γ, and δ relaxations are found in the crystalline selenium. The α relaxation, which is prominent in a highly crystalline sample, is assigned to the crystalline relaxation. The γ and δ relaxations increase in peak height with decreasing crystallinity and are attributed to the disordered region in the crystalline selenium. The dispersion map (logarithm of frequency versus reciprocal absolute temperature of loss maximum) of selenium is presented.     

Observation of spatial distribution of laser-induced refractive index change in dye-doped liquid crystals

Spatial distributions of photothermal refractive index changes in dye-doped liquid crystals were determined by an optical interferometric method. The refractive index change of the order of 10^-1, including spatial distribution, was estimated by the described experimental technique. The absolute value of the refractive index change was proportional to the pump beam power, and the diameter of the index distribution was slightly larger than that of the pump laser beam due to heat conduction.     

Bounded holomorphic functions and maps with some boundary behavior

Let Ω be a domain of . As a study of boundary behavior of functions and maps in Ω, we consider “the linear cluster set,” which is the cluster set along segment terminating at a boundary point of Ω. We prove that there exist bounded holomorphic functions and maps defined in Ω which have the linear cluster sets of positive measure at every point of a discrete subset of the boundary of Ω under some conditions.     

A -series identity and the arithmetic of Hurwitz zeta functions

Using a single variable theta identity, which is similar to the Jacobi Triple Product identity, we produce the generating functions for values of certain expressions of Hurwitz zeta functions at non-positive integers.     

On the electrical conductivity of intermediate valence compounds

The electrical resistivity of the hybridized 4f-(5d/6s) system interacting with LA phonons is calculated by applying the memory function method to the periodic Anderson model in Hartree-Fock approximation. We propose a new mechanism to explain in part the anomalous resistivity of mixed valence compounds such as CePd₃. For finite hybridizationV a finite fraction of 4f electrons participates in electrical conduction leading to an essential change of the normald band current. Resistivity and the fraction of 4f electrons increase with increasing value of [V/(E–)]² where (E–) is the distance between the effective positionE of the 4f level and the chemical potential. In typical mixed valence systems [V/(E–)]² is strongly temperature dependent and decreases with increasing temperature. This explains the high temperature resistivity behaviour of CePd₃. For (E–) being small compared to the Debye-temperature the resistivity is enhanced and becomes extremely sensitive to small changes of (E–).Work performed within the research program of the Sonderforschungsbereich 125, Aachen-Jülich-Köln     

Carrier removal by implanted IONS in GaAs

Abstract

A model for calculation of the range distribution of energetic ions with taking into account the channeling effect is proposed. The measurement of the depth distributions of boron ions in silicon crystals implanted at 13.6 and 91 MeV revealed significant difference between the measured and the calculated range profiles when the channeling effects have not been included in the calculation. In spite of deminishing the critical angles of channeling with growing ion energy the probability of the capture of ions into the channeling regime is significant in case of high energy implantation even when the incident angles are 7–10° off the main crystallographic directions.     

Infrared intensities of the fundamental vibrations of liquid H2O

Infrared absorption intensities of the fundamental vibrations of liquid H₂O have been obtained by measuring transmissions at two sample thicknesses (about 9 and 0.9 μ). The effect of multiple internal reflections on the observed absorptions is examined in terms of thin-film optics. It is shown that this simple method yields precise absorption intensities, without corrections for the effects of multiple internal reflections. The resulting intensities are 89.9 × 10³ cm/mmol and 5.91 × 10³ cm/mmol for the stretching and bending vibrations, respectively. The latter value was estimated after eliminating the absorption of intermolecular vibrations from the 1400–2400 cm^-1 region by means of computer simulation.     

Dynamic range of a thermoplastic photoconductor hologram

A thermoplastic photoconductor material is well-known as a hologram recording material. The dynamic ranges of a thermoplastic hologram are studied in two softening methods. One is the conventional heating method, and the other is the newly developed solvent vapor method. It is found that the solvent vapor method makes the dynamic range ten times as wide as the heating method, and in the solvent vapor method exposure time and charging voltage hardly affect the final diffraction efficiency.