Compression behaviors of binary skutterudite CoP3 in noble gases up to 40 GPa at room temperature

The binary skutterudite CoP(3) has a large void at the body-centered site of each cubic unit cell and is, therefore, called a nonfilled skutterudite. We investigated its room-temperature compression behavior up to 40.4 GPa in helium and argon using a diamond-anvil cell. High-pressure in situ X-ray diffraction and Raman scattering measurements found no phase transition and a stable cubic structure up to the maximum pressure in both media. A fitting of the present pressure-volume data to the third-order Birch-Murnaghan equation of state yields a zero-pressure bulk modulus K(0) of 147(3) GPa [pressure derivative K(0)' of 4.4(2)] and 171(5) GPa [where K(0)' = 4.2(4)] in helium and argon, respectively. The Gru?neisen parameter was determined to be 1.4 from the Raman scattering measurements. Thus, CoP(3) is stiffer than other binary skutterudites and could therefore be used as a host cage to accommodate large atoms under high pressure without structural collapse.     

Preparation of Cu2ZnSnS4 thin films by hybrid sputtering

In order to fabricate Cu₂ZnSnS₄ thin films, hybrid sputtering system with two sputter sources and two effusion cells is used. The Cu₂ZnSnS₄ films are fabricated by the sequential deposition of metal elements and annealing in S flux, varying the substrate temperature. The Cu₂ZnSnS₄ films with stoichiometric composition are obtained at the substrate temperature up to 400 °C, whereas the film composition becomes quite Zn-pool at the substrate temperature above 450 °C. The Cu₂ZnSnS₄ film shows p-type conductivity, and the optical absorption coefficient and the band gap of the Cu₂ZnSnS₄ film prepared in this experiment are suitable for fabricating a thin film solar cell.     

Charged particle activation analysis of boron and carbon on the surface of silicon wafer

Boron and carbon on the surface of silicon wafers in ordinary atmospheres were measured by activation with the¹⁰B(d,n)¹¹C and¹²Cd(d,n)¹³N reaction, respectively. Two sample plates in intimate contact were bombarded by deuterons, and the¹¹C or¹³N formed at the inside surfaces were measured after chemical separation. From 1.2·10¹³ to 8.4·10¹³ atoms/cm² of boron and from 2.4·10¹⁴ to 6.1·10¹⁵ atoms/cm² of carbon were found ,and the sensitivity was extended down to 5·10¹² and 3·10¹² atoms/cm² for boron and carbon, respectively.     

Simultaneous production of96Tc and111In by α-particle irradiation of stacked Nb and Ag foils,and their carrier-free separations

In order to produce routinely carrier-free⁹⁶Tc and¹¹¹In, their simultaneous production was examined by means of the stacked foil method. Both niobium and silver foils were arranged on the target holder so as the desired nuclear reactions took place effectively. Simultaneous irradiation of the target with 35 MeV -particles produced effectively¹¹¹In and⁹⁶Tc by the¹⁰⁹Ag(, 2n)¹¹¹In and⁹³Nb(, n)⁹⁶Tc reactions, respectively. Sufficient amounts of radioactivities for tracer uses are obtained by the irradiation at 5 A current for 2 hrs. In addition, carrier-free⁹⁶TcO₄ ^– in a perchloric acid solution could be prepared by the combined use of precipitation and anion-exchange methods. Separation of carrier-free¹¹¹In from the silver matrix was done by means of solvent extraction using acetylacetone as a chelating agent.     

Determination of carbon in copper by photon activation analysis

Determination of carbon in copper has been studied by photon activation analysis using 30 MeV bremsstrahlung. Chemical separation of carbon as CO₂ was performed by the combustion method in a high flow rate of oxygen stream. It has been demonstrated that the trace amount of carbon in copper can be determined accurately and precisely, and that the detection limit is 0.02 g.     

Kinetics of the phosphorescent triplet states of tetracyanobenzene complexes as studied by microwave induced delayed phosphorescence

Using microwave induced delayed phosphorescence techniques we determined the populating and depopulating rate constants for the individual spin-sublevels of the phosphorescent states of tetracyanobenzene (TCNB) and its charge-transfer complexes with benzene and hexamethylbenzene (HMB) in n-hexane at 1.25 K. It was shown that the non-radiative decay process from the shortest lifetime sublevel is most responsible for the previously observed shortening in the phosphorescence lifetime of the TCNBHMB complex.     

Delayed charge-transfer fluorescence of the tetracyanobenzene-biphenyl complex in the crystalline state

Intermolecular charge-transfer phosphorescence and fluorescence were observed for the biphenyl single crystal containing 1, 2, 4, 5-tetracyanobenzene as a guest. In addition, the delayed charge-transfer fluorescence due to triplet-triplet annihilation was observed for the first time.     

Angle-resolved photoemission of the c(2 × 2) and c(3 × 1) oxygen overlayers on Fe(110)

Angle-resolved photoemission spectroscopy utilizing synchrotron radiation has been used to study the band structure of the c(2×2) and (3×1) oxygen overlayers on Fe(110). The symmetries of the O-2p-derived states at the center of the surface Brillouin zone $\text{(}\text{Γ}\text{)}$ were identified using polarized light. At $\text{Γ}$ the p_xp_y- and p_z-derived levels are at about 5.5 and 7.0 eV below the Fermi level, respectively, for both ordered overlayers. The p-states of the c(2×2)-O structure show very little dispersion (?0.1 eV) with $\text{k}{}_{\mathrm{}}$. On the other hand, the c(3×1)-O overlayer exhibits considerable dispersion of ～1.6 eV. The essential features of the measured dispersion are reproduced well by the dispersion predicted in a qualitative way for an isolated c(3×1) oxygen monolayer.