天文斑点成像技术中的噪声影响分析

为进一步说明天文像复原新方法-迭代位移叠加法的性质，对探测器的附加噪声在斑点干涉术、斑点掩模法和迭代位移叠加法中的影响分别进行了分析。结果表明：在斑点掩模法中，复杂的噪声高阶矩统计被引入了重谱的噪声偏差，因此对噪声极为敏感，使数据处理更加复杂化；与斑点掩模法相比，迭代位移叠加法仅涉及对噪声的一阶矩统计平均，所以此新方法的特点是对噪声不敏感，具有图像复原处理过程简单快捷的优越性。     

用于曲面精密检测的新型光纤三角传感器研究

基于光纤传感技术和三角测量方法，提出了一种用于曲面检测的新型光纤三角传感器。根据所设计的轮辐式接收光纤结构，可以在测量曲面与传感头间位移时，首先获取被测点处微面元的倾斜信息，以便对传感器测量值进行实时误差修正，从而解决了被测表面倾斜对坐标测量带来的影响。该传感器还能有效地消除环境光干扰、光源波动、表面反射率变化等对测量带来的影响。建立了传感器测量的数学模型。理论分析和初步的实验结果证明了系统的有效性和实用性。该传感器系统不稳定性好于0.3%，横向分辨率好于8μm，高度分辨率好于0.1μm。     

模拟退火法在吸收薄膜的椭偏反演算法中的应用

将一种广泛用于求解复杂系统优化问题的技术－－模拟退火法－－用来求解椭偏反演方程。首先假设一个薄膜模型，计算出其相应的椭偏参数（Ψ，Δ）的值，在这个计算值的基础上加入不同标准偏差的高斯噪声；然后将加入噪声后的值（Ψm,Δm)作为模拟的测量数据，采用模拟退火算法进行求解，验证得知这种方法求得的薄膜参数很接近于假设的薄膜模型参数的真值，与其他文献的报道结果一致，而且在扩大搜寻范围时，仍然可以得到准确解，从而证明了该方法的可行性以及有效性。     

差分吸收光谱法测量大气污染的测量误差分析

差分吸收光谱技术被广泛地应用于测量大气中微量元素的浓度，尽管该技术利用最小二乘法来反演待测气体的浓度，能够得到很高的测量精度。但是，由于仪器本身的噪声以及测量波段其它气体的干扰等，使得仪器的测量有一定的误差，而且上述因素还决定着仪器的测量下限。对差分吸收光谱方法的测量误差以及引起误差的原因作了详细的分析。     

激光二极管相对于铯饱和吸收D2线的无调制扰动三次谐波锁频

将频率调制加在声光调制器上 ,用三次谐波探测法获得了铯原子D2 线的三阶微分饱和光谱。采用这种激光器无调制扰动方案结合三次谐波锁频技术 ,实现了 85 2nm的分布布拉格反射器半导体激光器相对于 6S1/2 F =4- 6P3 /2 F′ =5超精细跃线的频率锁定。由锁定后的频率误差信号估算 ,10s内激光频率起伏小于± 35 0kHz ,相对频率稳定度约 1× 10 -9。这种无调制扰动方案可以消除一般的饱和吸收稳频方法中由于直接对激光器进行频率调制而带来的额外频率噪声 ;三次谐波锁频技术的应用 ,还可有效地降低铯原子饱和吸收谱中剩余多普勒背景的影响     

一种基于光纤萨尼亚克环的新型传感结构

提出了一种实现全光纤多扰动测量的基于光纤萨尼亚克环的新型传感结构。该传感结构采用新型的双萨尼亚克环结构并用波分复用技术代替了传统的双光源结构，减小了系统损耗，实现了对多扰动的位置的测量。分析了传感原理，推导了数学模型，表明测量误差与解调电路的频率响应有关，并进行了单频和多频扰动的实验研究，实验证明了理论分析的正确性。     

智能化掺铒光纤放大器

介绍一种智能化的掺铒光纤放大器(EDFA)技术.基于掺铒光纤的光放大特性与EDFA内外部工作参量(如构成EDFA的元器件参量、泵浦激光参量、输入/输出光信号参量等)的关系,采用智能化处理技术使EDFA能按照外界条件,自动地调整自身工作状态,使之符合应用系统的需要.智能化掺铒光纤放大技术可以使EDFA的应用更灵活,既可用作前置放大,也可用作功率放大或线路放大,同时还带来一些新的特点和优越性能.实验制作的智能化EDFA可以在输入信号小到-40dBm或大到+10dBm即约50dB的宽动态范围内正常工作.     

Phase transition and pitting corrosion behaviour for Mo—implanted aluminium

Molybdenum ions are implanted into aluminium with high ion flux and high dose at elevated temperatures of 200℃, 400℃ and 500℃. Due to the high temperature and high flux of vacancies and interstitial atoms, the atom diffusion and chemical effects are enhanced during the ion implantation. The effects increase with increasing ion flux and dose, so that new phase formation and phase transition emerge noticeably. X-ray diffraction analysis shows that when the aluminium is implanted with Mo ions at a low ion flux (25μA/cm²), the Al₅Mo alloy is formed. The atomic ratio of Mo/Al of the Al₅Mo phase is close to 20%. When the aluminium is implanted with Mo ions at a high ion flux (50μA/cm²), the phase transition from Al₅Mo to Al₁₂Mo appears, and the latter is dominant, which is determined to be the final phase. The ratio of Mo/Al in Al₁₂Mo is 7.7%. Rutherford backscattering spectroscopy indicates also that the Mo/Al atom ratio is ～7% to ～8% in Mo-implanted aluminium. The atomic ratios of the constituents in Al₅Mo and Al₁₂Mo are of stoichiometric composition for these alloys. The thicknesses of the Al₁₂Mo alloy layers for Mo-implanted Al with ion doses of 3×10¹⁷/cm² and 1×10¹⁸/cm² are 550nm and 2000nm, respectively. The pitting corrosion potential V_p increases obviously. It is clear that due to the formation of Al₁₂Mo alloy layer, the pitting corrosion resistance is enhanced.     

Dielectric effect on the rf characteristics of a helical groove travelling wave tube

A new type of partial-dielectric-loaded helical groove slow-wave structure (SWS) for millimetre wave travelling wave tube (TWT） is presented in this paper.The radio-frequency characteristics including the dispersion properties,the longitudinal electric field distribution and the beam-wave coupling impedance of this structure are analysed.The results show that the dispersion of the helical groove circuit is weakened,the phase velocity is reduced and the position of the maximum Ez is moved from the mouth to the inside of the groove after partially filling the dielectric materials in the helical groove SWS.Therefore,the dielectric-loaded helical groove SWS is suitable for a multi-beam TWT with broad band and high gain.     

The orientation-selective growth of LaNiO3 films on Si(100) by pulsed laser deposition using a MgO buffer

Highly (100)-oriented, (110)-oriented and polycrystalline LaNiO₃ (LNO) films were successfully prepared on Si(100) using an oriented MgO film as a buffer. It was somewhat surprising to find that that the orientation relation between the LNO film and the corresponding MgO buffer was: LNO(100)\MgO(110), LNO(110)\MgO(111) and LNO(polycrystalline)\MgO(100). The crystalline quality of the LNO films was shown to be sensitive to the preparation conditions of the MgO buffer. The film surface was very smooth, without micrometer-sized droplets being observed. All LNO films were of metallic conductivity, with a room-temperature resistivities of approximately 250, 280 and 420 μΩ cm for the (110)-oriented, (100)-oriented and polycrystalline LNO, respectively. Received: 2 April 2001 / Accepted: 23 October 2001 / Published online: 3 June 2002