Top electrode effects on resistive switching behavior in CuO thin films

Top electrode (TE) material on the resistive switching behavior of (TE)/CuO/SnO₂:F/Si substrate has been studied. We investigated the switching properties of CuO films deposited by sol-gel process. Two kinds of top electrode (TE) material on the resistive switching behaviors have been studied. The nonpolar and bipolar resistive switching phenomenon was observed in CuO thin films with different top electrodes. The filamentary mechanism was used to explain the two kinds of resistive switching behaviors. For the Pt/CuO/ATO device, it showed the nonpolar resistive switching where conducting path is formed and disappear due to the oxygen vacancy. For the Cu/CuO/ATO device, the resistance reduction is due to the existing Cu to form conduction Cu-rich pathways. An opposite bias takes the existing Cu back to the Cu electrode to its high-resistance state. CuO thin films are also observed by XRD, AFM and XPS.     

Diode-pumped Nd<Superscript>3+</Superscript>:YAl<Subscript>3</Subscript>(BO<Subscript>3</Subscript>)<Subscript>4</Subscript> laser at 1338 nm

A high-power diode -pumped Nd³⁺:YAl₃(BO₃)₄ (Nd:YAB) laser emitting at 1338 nm is described. At the incident pump power of 9.8 W, as high as 734 mW of continuous-wave (CW) output power at 1338 nm is achieved. The slope efficiency with respect to the incident pump power was 9.0%. To the best of our knowledge, this is the first demonstration of such a laser system. The output power stability over 60 min is better than 2.6%. The laser beam quality M ² factor is 1.21.     

大型激光装置束间能量平衡能力综合分析方法

 针对大型激光装置输出能量平衡能力,建立了束间均方根分析方法。构建了大型激光装置的光束能量观测数据变换过程,得到服从近似正态分布的变换数据,从而建立简便的束间能量平衡能力的均方根计算方法;基于全控图和选图,针对装置能量平衡能力短期变化提出均方差控制图,并定义装置平均失效强度函数,用于描述装置整体的能量平衡能力长期变化趋势。通过对调试数据的分析,验证了综合分析方法的可视性和高效性。     

Phase-controlled preparation of iron (oxyhydr)oxide nanocrystallines for heavy metal removal

Obtaining cost-effective iron (oxyhydr)oxide nanocrystallines is the essential prerequisite for their future extensive applications in environmental remediation, such as the removal of heavy metals from contaminated waters. Here, various phases of iron (oxyhydr)oxide nanocrystallines were simply synthesized from the phase-controlled transformation of amorphous hydrous ferric- or ferrous-oxide in thermal solution with a certain ethanol/water ratio and with the presence of oleic acid. According to this method, goethite nanorods in diameter of 3–4 nm, hematite nanocubes sized 20–30 nm, and magnetite nanoparticles in diameter of 6–7 nm were successfully obtained. The final products of this transformation can be conveniently controlled by adjusting the reaction parameters, such as pH, temperature, and ethanol/water ratio. Due to the enhanced specific surface area and probably the modifications of the surface structure of nanocrystallines, the as-synthesized goethite nanorods and magnetite nanoparticles demonstrated extremely strong As(III) affinity, with 5.8 and 54 times of As(III) adsorption, respectively, higher than the micron-sized relatives. The cost-effective feature of as-synthesized nanocrystallines and their remarkably enhanced affinity toward arsenic made them potentially applicable for the removal of arsenic and such like heavy metals from the contaminated environment.     

High slope efficiency and low threshold in a laser-diode-pumped passively Q-switched ion-implanted Nd:YVO<Subscript>4</Subscript> planar waveguide laser with GaAs saturable absorber

A passively Q-switched waveguide laser, to our knowledge, has been firstly demonstrated in Nd: YVO₄ crystal formed by 3 MeV Si⁺ ion implantation at a dose of 1 × 10¹⁵ ions/cm² at room temperature, in which GaAs was used as saturable absorber. The dependences of the average output power, pulse width, pulse repetition rate on absorbed pump power have been measured at different output plane mirror transmissions. At an absorbed pump power of 78.8 mW and output transmission of 20%, the shortest pulse width of 3.88 ns was obtained, corresponding to the peak power and single pulse energy of 212 W and 0.82 μJ, respectively. The threshold pump power was as low as 40 mW, and the slope efficiency was about 64.5% when the absorbed pump power was lower than 70 mW.     

大功率固态脉冲形成线研究进展

固态化是脉冲功率技术发展的新趋势。综述了中国工程物理研究院流体物理研究所在大功率固态脉冲形成线方面的研究进展,给出了基于铁电陶瓷及玻璃-陶瓷复合材料的固态脉冲形成线绝缘强度、脉冲放电特性等方面的最新结果。对基于铁电陶瓷及玻璃-陶瓷复合材料的固态脉冲形成线的脉冲特性进行了分析和探索。     

体结构GaAs光导开关实验研究

为解决光导开关耐受场强的提高问题,研制了2种体结构光导开关,并进行了实验研究。两种开关均由半绝缘GaAs材料制成,一种尺寸为10.0 mm×10.0 mm×0.6 mm,电极位于10.0 mm×10.0 mm面上相对位置,电极直径6 mm;另一种尺寸为15.0 mm×15.0 mm×3.0 mm,8 mm直径电极位于15.0 mm×15.0 mm面上相对位置。测试了第1种开关在不同半高宽脉冲加载电压下的击穿电压,结果表明其最大耐受电压达7.6 kV,击穿电场127 kV/cm。对第2种结构测试了开关在直流加载条件下的暗态伏安特性并进行了触发实验,结果表明在15 kV工作电压下,其放电最大电流超过3.5 kA。     

低过模高功率微波方圆模式转换器设计

设计了一种结构简单的高功率微波方圆模式转换器,可以实现圆波导TM01模式与矩形波导TE10模式之间的相互转换。转换器工作在C波段,中心频率4.1 GHz,其输入端口和输出端口相互垂直。计算和仿真结果表明:中心频率处该模式转换器的转换效率可达99%,回波损耗小于-20 dB,转换效率大于90%的带宽大于0.2 GHz。转换器整体3维尺寸都只有10 cm左右。     

The influence of interfacial barrier engineering on the resistance switching of In₂O₃:SnO₂/TiO₂/In₂O₃:SnO₂ device

The I–V characteristics of In2O3:SnO2/TiO2/In2O3:SnO2 junctions with different interfacial barriers are inves- tigated by comparing experiments. A two-step resistance switching process is found for samples with two interfacial barriers produced by specific thermal treatment on the interfaces. The nonsynchronous occurrence of conducting filament formation through the oxide bulk and the reduction in the interfacial barrier due to the migration of oxygen vacancies under the electric field is supposed to explain the two-step resistive switching process. The unique switching properties of the device, based on interfacial barrier engineering, could be exploited for novel applications in nonvolatile memory devices.     

Ca₂BO₃Cl:Ce³⁺,Tb³⁺:A novel tunable emitting phosphor for white light-emitting diode

<正>Ca₂BO₃Cl:Ce³⁺,Ca₂BO₃Cl:Tb³⁺,and Ca₂BO₃Cl:Ce³⁺,Tb³⁺ phosphors are synthesized by a high temperature solid-state reaction.The emission intensity of Ce³⁺ or Tb³⁺ in Ca₂BO₃Cl is influenced by the Ce³⁺ or Tb³⁺ doping content,and the optimum concentrations of Ce³⁺ and Tb³⁺ are 0.03 mol and 0.05 mol,respectively.The concentration quenching effect of Ce³⁺ or Tb³⁺ in Ca₂BO₃Cl occurs,and the concentration quenching mechanism is d-d interaction for either Ce³⁺ or Tb³⁺.The Ca₂BO₃Cl:Ce³⁺,Tb³⁺ can produce colour emission from blue to green by properly tuning the relative ratio between Ce³⁺ and Tb³⁺,and the emission intensity of Tb³⁺ in Ca₂BO₃Cl can be enhanced by the energy transfer from Ce³⁺ to Tb³⁺.The results indicate that Ca₂BO₃Cl:Ce³⁺,Tb³⁺ may be a promising double emission phosphor for UV-based white light emitting diodes.