High resolution absorption cross-section measurements of the Schumann-Runge bands of O2 by VUV Fourier transform spectroscopy

The photoabsorption spectrum of the O₂ Schumann-Runge bands was measured with resolution comparable to the Doppler widths by using the VUV Fourier transform spectrometer from Imperial College, London, combined with synchrotron radiation as a continuum light source at the Photon Factory, KEK, Japan. The analysis of the (12,0)-(17,0) bands of the Schumann-Runge system provides accurate rotational line positions as well as the line intensities from 185 to 175 nm. Molecular constants of the levels of the state have been determined. The (v^′,0) band oscillator strengths were determined as 2.38, 2.62, 2.70, 2.66, 2.40, and 2.12×10⁻⁵ for the bands from v^′=12 to 17, respectively.     

Graphite–boron composite heater in a Kawai-type apparatus: the inhibitory effect of boron oxide and countermeasures

We have investigated the performance of a graphite–boron composite (GBC) with 3?wt % boron as a precursor for a boron-doped diamond heater in a Kawai-type apparatus at 15?GPa. We first tested a machinable cylinder of GBC sintered at 1000°C in Ar/H₂ gas (99:1 molar ratio). Boron oxide (B₂O₃) formed during sintering frequently hindered the GBC heater from stable operation at temperatures higher than 1400°C by producing melt throughout the heater together with oxide and/or silicates. We then rinsed the GBC heater in hydrochloric acid to remove B₂O₃. After rinsing, we succeeded in stably generating temperatures higher than 2000°C. We also improved a molding process of different-sized GBC tubes for convenient use and tested the molded GBC heater. It was free from the B₂O₃ problem. The electromotive force of the W/Re thermocouple was successfully monitored up to 2400°C.     

Structured Surfaces for Generation of Negative Index of Refraction

Materials with negative index of refraction have properties that are not naturally available. Such properties can be used to develop novel devices like the superlens which can surpass the diffraction limit. Optical cloaking can be achieved through this negative refractive index method. This article reviews the progress made in the area of negative refractive index materials from the first generation of negative electrical permittivity to the demonstration of negative index of refraction at optical frequency, with the relevant discussion on the physics of these materials. The prime focus of this article is on experimental demonstrations and fabrication related issues of negative refractive index materials which makes use of structured surfaces.     

Reactive ion etching of FePt using inductively coupled plasma

We propose a reactive ion etching (RIE) process of an L1₀-FePt film which is expected as one of the promising materials for the perpendicular magnetic recording media. The etching was carried out using an inductively coupled plasma (ICP) RIE system and an etching gas combination of CH₄/O₂/NH₃ was employed. The L1₀-FePt films were deposited on (1 0 0)-oriented MgO substrates using a magnetron sputtering system. The etching masks of Ti were patterned on the FePt films lithographically. The etch rates of ∼16 and ∼0 nm/min were obtained for the FePt film and the Ti mask, respectively. The atomic force microscopy (AFM) analyses provided the average roughness (R_a) value of 0.95 nm for the etched FePt surface, that is, a very flat etched surface was obtained. Those results show that the highly selective RIE process of L1₀-FePt was successfully realized in the present study.     

Gaussian-weighted parton quasi-distribution(Lattice Parton Physics Project(LP~3))

正Recent years have witnessed rapid progress in calculating parton distribution functions (PDFs), rather than just their moments, from lattice QCD [1-9]. The most remarkable aspect of such calculations is that one can connect appropriately chosen Euclidean correlation functions calculable on the lattice to PDFs through a perturbative matching relation. This can be understood in the framework of the large-momentum     

First order pseudodifferential operators on the torus: Normal forms,diophantine phenomena and global hypoellipticity

In this note we give an existence result for a boundary value problem for integro-differential equations.     

Uniform rotation of smectic layers of a ferroelectric liquid crystal in an asymmetric electric field

An asymmetric ac electric field with amplitudeE=10 V/μm gives rise to a matched rotation of the normal to the smectic layers, while a sinusoidal fieldE=1 V/μm is used to study the rotation in the method of modulation total internal reflection ellipsometry, which makes it possible to probe the region of a ferroelectric liquid crystal (FLC) next to the electrode (h≈0.7 μm). It is shown that the angle of rotation of the normal to the smectic layers near the surface of the electrode varies reversibly as a function of the polarity and number of electric pulses applied, just as in the interior region. The characteristic dynamic properties of thin layers of nematic liquid crystals, such as an anomalously long relaxation time and a high-frequency relaxation process, are observed in thin FLC layers.     

The Rasmussen invariants and the sharper slice-Bennequin inequality on knots

Rasmussen introduced a knot invariant based on Khovanov homology theory, and showed that this invariant estimates the four-genus of knots. We compare his result with the sharper slice-Bennequin inequality for knots. Then we obtain a similar estimate of the Rasmussen invariant for this inequality.     

Electrical transport in electron beam irradiated polyacetylene

Electrical conductivity of non-doped (CH)_x decreases a little and its activation energy increases a little by the electron beam irradiation. The increase of the electrical conductivity of the irradiated (CH)_x by I₂ doping is not so remarkable compared with that of non-irradiated (CH)_x. The conductivity of heavily irradiated (CH)_x is very low even after halogen dopings.On the other hand, the effect of the electron beam irradiation on the conductivity of previously I₂ doped (CH)_x is much less compared with that doped after the electron beam irradiation. These results are explained tentatively by the role of I₂ molecules in the initial stage of radiolysis and the suppression of the cross-linking.     

Numerical study of localization in Anderson model for disordered systems

The localization properties in the Anderson model of two dimensional square lattices are investigated numerically. Pretty large lattices composed of 10⁴ (= 100 × 100) sites are dealt with, and the overall behaviors of the eigenvectors near the band center are directly examined. Fairly sharp transition and the exponentially decaying localized states are visualized.