Template‐ and Metal‐Free Synthesis of Nitrogen‐Rich Nanoporous “Noble” Carbon Materials by Direct Pyrolysis of a Preorganized Hexaazatriphenylene Precursor

The targeted thermal condensation of a hexaazatriphenylene‐based precursor leads to porous and oxidation‐resistant (“noble”) carbons. Simple condensation of the pre‐aligned molecular precursor produces nitrogen‐rich carbons with C₂N‐type stoichiometry. Despite the absence of any porogen and metal species involved in the synthesis, the specific surface areas of the molecular carbons reach up to 1000 m² g^?1 due to the significant microporosity of the materials. The content and type of nitrogen species is controllable by the carbonization temperature whilst porosity remains largely unaffected at the same time. The resulting noble carbons are distinguished by a highly polarizable micropore structure and have thus high adsorption affinity towards molecules such as H₂O and CO₂. This molecular precursor approach opens new possibilities for the synthesis of porous noble carbons under molecular control, providing access to the special physical properties of the C₂N structure and extending the known spectrum of classical porous carbons.     

Bulk single crystals of β-Ga2O3 and Ga-based spinels as ultra-wide bandgap transparent semiconducting oxides

In the course of development of transparent semiconducting oxides (TSOs) we compare the growth and basic physical properties bulk single crystals of ultra-wide bandgap (UWBG) TSOs, namely β-Ga₂O₃ and Ga-based spinels MgGa₂O₄, ZnGa₂O₄, and Zn_1-xMg_xGa₂O₄. High melting points of the materials of about 1800 -1930 °C and their thermal instability, including incongruent decomposition of Ga-based spinels, require additional tools to obtain large crystal volume of high structural quality that can be used for electronic and optoelectronic devices. Bulk β-Ga₂O₃ single crystals were grown by the Czochralski method with a diameter up to 2 inch, while the Ga-based spinel single crystals either by the Czochralski, Kyropoulos-like, or vertical gradient freeze / Bridgman methods with a volume of several to over a dozen cm³. The UWBG TSOs discussed here have optical bandgaps of about 4.6 - 5 eV and great transparency in the UV / visible spectrum. The materials can be obtained as electrical insulators, n-type semiconductors, or n-type degenerate semiconductors. The free electron concentration (n_e) of bulk β-Ga₂O₃ crystals can be tuned within three orders of magnitude 10¹⁶ - 10¹⁹ cm^?3 with a maximum Hall electron mobility (μ) of 160 cm²V^?1s^?1, that gradually decreases with n_e. In the case of the bulk Ga-based spinel crystals with no intentional doping, the maximum of n_e and μ increase with decreasing the Mg content in the compound and reach values of about 10²⁰ cm^?3 and about 100 cm²V^?1s^?1 (at n_e > 10¹⁹ cm^?3), respectively, for pure ZnGa₂O₄.     

Radical‐Induced Hydrosilylation Reactions for the Functionalization of Two‐Dimensional Hydride Terminated Silicon Nanosheets

Herein we present the functionalization of freestanding silicon nanosheets (SiNSs) by radical‐induced hydrosilylation reactions. An efficient hydrosilylation of Si?H terminated SiNSs can be achieved by thermal initiation or the addition of diazonium salts with a variety of alkene or alkyne derivatives. The radical‐induced hydrosilylation is applicable for a wide variety of substrates with different functionalities, improving the stability and dispersibility of the functional SiNSs in organic solvents and potentially opening up new fields of application for these hybrid materials.