Elastic stability of DNA configurations. II. Supercoiled plasmids with self-contact

Configurations of protein-free DNA miniplasmids are calculated with the effects of impenetrability and self-contact forces taken into account by using exact solutions of Kirchhoff's equations of equilibrium for elastic rods of circular cross section. Bifurcation diagrams are presented as graphs of excess link, DeltaL, versus writhe, W, and the stability criteria derived in paper I of this series are employed in a search for regions of such diagrams that correspond to configurations that are stable, in the sense that they give local minima to elastic energy. Primary bifurcation branches that originate at circular configurations are composed of configurations with D(m) symmetry (m=2,3,...). Among the results obtained are the following. (i) There are configurations with C2 symmetry forming secondary bifurcation branches which emerge from the primary branch with m=3, and bifurcation of such secondary branches gives rise to tertiary branches of configurations without symmetry. (ii) Whether or not self-contact occurs, a noncircular configuration in the primary branch with m=2, called branch alpha, is stable when for it the derivative dDeltaL/dW, computed along that branch, is strictly positive. (iii) For configurations not in alpha, the condition dDeltaL/dW>0 is not sufficient for stability; in fact, each nonplanar contact-free configuration that is in a branch other than alpha is unstable. A rule relating the number of points of self-contact and the occurrence of intervals of such contact to the magnitude of DeltaL, which in paper I was found to hold for segments of DNA subject to strong anchoring end conditions, is here observed to hold for computed configurations of protein-free miniplasmids.     

Photoproduction of positive pions from hydrogen with PHOENICS at ELSA

The differential cross section of the reaction γp→π⁺n has been measured with the PHOENICS detector at ELSA in Bonn. For the first time this cross section has been determined simultaneously over a large range of photon energies (E_γ = 220−900 MeV) and pion angles (Θ^c.m._pi = 35°−135°) with a tagged photon facility. The experimental set-up allowed a considerable kinematic overdetermination of the investigated reaction. Accordingly, the background contributions have been suppressed to below 1%. The measured differential cross section is in good agreement with existing data. The comparison with different model calculations is presented.     

Fluorescence studies and semiempirical calculations on alkali ion indicators

Two newly synthesized cryptands act as sensitive Na⁺- and K⁺-selective indicators for cation concentrations above 20 M. The fluorescence properties change markedly upon cation binding. In addition, the free ligands exhibit a pronounced sensitivity to pH, which is considerably lower for the cation complexes. Time resolved fluorescence is characterized by a decay time of about 5 ns that is attributed to the diprotonated protolytic state of the uncomplexed ligands. Semiempirical calculations show the systematic influence of the nitrogen lone pairs or the N–H bond on the stability of the system. The cause of the strong fluorescence intensity increase observed upon protonation of the fluorescent cryptands may be attributed to an increase in the S₁–T _x energy gap as a consequence of bridgehead nitrogen protonation.This is a peer-reviewed conference proceeding article from the Third Conference on Methods and Applications of Fluorescence Spectroscopy, Prague, Czech Republic, October 18–21, 1993.     

RF-μSR study of muonium charge states and dynamics in Si

The radio frequencySR technique developed at TRIUMF was used to measure the temperature dependence of the diamagnetic muon, Mu, and Mu^* amplitudes in silicon between 10 K and 500 K. Six samples doped with phosphorus (n-type) and boron (p-type) in the concentration range 10¹¹ to 10¹⁵ cm^–3 were studied. In pure Si a very good fit over the whole temperature range is obtained from a model that includes the ionization of Mu^* and Mu to a bond centered ⁺ followed at high temperature by charge exchange involving Mu.     

InGaAs/Si3N4 interface obtained in ultrahigh vacuum multipolar plasma: In-situ control by ellipsometry and electrical characterization

A multipolar plasma passivation scheme controlled by in-situ ellipsometry has been developed to produce a high electrical quality InGaAs/Si₃N₄ interface. We have demonstrated the possibility to remove all native oxides at the InGaAs surface by heating the sample at 240°C, then using the action of a multipolar H₂ plasma at 185°C, without optical degradation of the surface. The passivation by a native nitride layer is then performed using a N₂ plasma, and Si₃N₄ is deposited. The treatment induces a reduction of the density of interface states N_ss(E), and also a change of the nature of these interface states as shown by a reduction in the capture cross section σ_n(E).     

CO laser stabilization using the optogalvanic Lamb-dip

Frequency stabilization of the CO laser using a CO lamb-dip is achieved in the range from 5.0–6.3 m. The CO saturation signal is obtained from a low-pressure discharge in absorption and is detected using optogalvanic, detection. The frequency stability and reproducibility has been verified to be better than 100 kHz; this is an improvement of more than one order of magnitude compared with locking techniques using CO laser gain profiles.Alexander von Humboldt Awardee from National Bureau of Standards, Boulder, Colorado, USA