态|Ψ(3)〉q中广义磁场的不等幂次高次振幅压缩

利用多模压缩态理论,研究了一种新型的三态叠加多模叠加态光场|Ψ⁽³⁾〉_q中广义磁场分量(即第一正交相位分量)的不等幂次高次振幅压缩特性.结果表明:态|Ψ⁽³⁾〉_q是一种典型的三态叠加多模非经典光场,其广义磁场分量在一定条件下可呈现出周期性变化的、偶数次的不等幂次高次振幅压缩效应.     

态|ψ3(3)〉q中广义磁场分量的N次方Y压缩效应

构造了由多模复共轭相干态|{Z_j^*}〉_q、多模复共轭虚相干态|{iZ_j^*}〉_q和多模真空态|{Q_j} 〉_q这三态的线性叠加所组成的第Ⅲ类三态叠加多模叠加态光场|ψ₃⁽³⁾〉_q.利用多模压缩态理论研究了态|ψ₃⁽³⁾〉_q中广义磁场分量的任意偶数次广义非线性等幂次N次方Y压缩特性.结果发现:在压缩次数N取偶数,只要各模的初始相位φ_j(j=1,2,3,…,…,q),态间的初始相位差(θ_i-θ₂)(i=1,3)和各单模相干态光场平均光子数R_j²之和 分别满足各自的取值条件,态|ψ₃⁽³⁾〉_q的广义磁场分量(即第一正交相位分量)就可呈现出周期性变化的、任意偶数次的广义非线性等幂次N次方Y压缩效应.     

Intrinsic fiber Fabry-Perot temperature sensor with fiber Bragg grating mirrors

A fiber Fabry-Perot interferometer (FFPI) sensor is formed with broadband (~3 nm, 3-dB bandwidth) fiber Bragg grating (FBG) mirrors. Repetitively modulating a distributed-feedback laser produces chirping that modulates the reflectance of the FFPI. Because the reflectance of the FBG mirrors varies with optical frequency, the fringes in the sensor reflectance modulation are distinguishable, making it possible to extend the sensor dynamic range versus that of a FFPI sensor with conventional wavelength-dependent mirrors. An ambient temperature is determined in the range from 25 to 170 degrees C with a resolution of 0.005 degrees C.     

陈化温度和Fe/Zr配比对SO42-/Fe2O3-ZrO2固体超强酸结构与性能的影响

用低温陈化法制备了SO42 -/Fe2 O3 ZrO2 (简称SFZ)固体超强酸催化剂 ,用红外光谱 (IR)和X光衍射(XRD)对其结构进行了表征 ,并考察了它对合成癸二酸二正丁酯的催化性能 .IR谱显示 ,低温陈化的SFZ样品在10 70cm-1处吸收峰远强于常温陈化样品 .XRD分析则显示 ,在焙烧温度为 6 5 0℃、Fe/Zr为 2∶1时 ,低温陈化的样品出现了亚稳态的ZrO2 四方晶相 .该样品在催化酯化反应中使产率达 90 %以上 ,高于常温陈化样品的 30 % .研究结果表明 :在其他条件不变时 ,低温陈化所出现的亚稳态的ZrO2 四方晶相是表面酸性和催化活性增加的微观原因     

Degradation and recovery properties of AlGaN/GaN high-electron mobility transistors under direct current reverse step voltage stress

Direct current (DC) reverse step voltage stress is applied on the gate of AlGaN/GaN high-electron mobility transistor (HEMT). Experiments show that parameters degenerate under stress. Large-signal parasitic source/drain resistance (R_S/R_D) and gate-source forward I-V characteristics are recoverable after breakdown of the device under test (DUT). Electrons trapped by both the AlGaN barrier trap and the surface state under stress lead to this phenomenon, and surface state recovery is the major reason for the recovery of device parameters.     

等离子体表面梯度硅沉积对环氧树脂电气性能的影响

环氧树脂作为常见的绝缘材料,在高压直流电场作用下易在其表面积累电荷,发生电场畸变,导致材料绝缘性能下降,影响电力系统运行可靠性。为改善气固界面的电荷特性和绝缘性能,在大气压等离子体射流技术的基础上,对环氧树脂表面进行等离子体梯度硅沉积处理。对改性前后环氧树脂表面理化特性、表面电导率、表面电荷消散和沿面耐压特性进行了多参数测量。实验结果表明,梯度改性对材料表面的物理形貌和化学组分均有明显影响,不同区域的电导率实现了梯度分布,加快了表面电荷消散速度,表面陷阱能级变浅;梯度改性后的样品沿面闪络电压提升幅度可达30.16%。通过等离子体表面梯度硅沉积处理能够改善环氧树脂表面电气性能,在高压直流设备的绝缘设计方面具有广阔的应用前景。     

Ab initio方法研究~(40)Ca~(35)Cl分子的自旋轨道耦合效应和跃迁性质

本文研究了~(40)Ca~(35)Cl分子低态的自旋轨道耦合分裂以及获得更精确的光谱常数和更高的激发态.以从头算理论为基础,使用多参考组态相互作用方法获得了该分子的势能曲线和自旋轨道分裂,之后求解径向一维薛定谔方程获得光谱常数.得到了~(40)Ca~(35)Cl分子7个Λ-S低电子态的势能曲线和永久偶极矩,以及A~2Π→~2Σ~+,1~2Δ和C~2Π→~2Σ~+,1~2Δ跃迁的跃迁偶极矩,得到的光谱常数(不管是考虑了自旋轨道耦合(SOC)还是没有考虑SOC)与实验值非常符合,且要好于之前的理论计算结果 .值得注意的是,目前的计算还首次得到了C~2Π→~2Σ+,1~2Δ跃迁的跃迁性质,为之后实验观察~(40)Ca~(35)Cl分子的高激发态光谱和跃迁性质提供有益的理论参考.     

Influence of an inserted bar on the flow regimes in the hopper

We investigated the influence of an inserted bar on the hopper flow experimentally.Three geometrical parameters,size of upper outlet D1,size of lower outlet D0,and the height of bar H,are variables here.With varying H we found three regimes:one transition from clogging to a surface flow and another transition from a surface flow to a dense flow.For the dense flow,the flow rate follows Beverloo’s law and there is a saturation of inclination of free surfaceθ.We plotted the velocity field and there is a uniform linear relation between the particle velocity and depth from the free surface.We also found that the required value of D₁ to guarantee the connectivity of flow is little smaller than D₀.For the transition from a surface flow to a dense flow,there is a jump of flow rate and the minimumθfor flowing is two degrees larger than the repose angle.     

Some results on metric n-Lie algebras

We study the structure of a metric n-Lie algebra G over the complex field C. Let G = SR be the Levi decomposition, where R is the radical of G and S is a strong semisimple subalgebra of G. Denote by m(G) the number of all minimal ideals of an indecomposable metric n-Lie algebra and R ⊥ the orthogonal complement of R. We obtain the following results. As S-modules, R ⊥ is isomorphic to the dual module of G/R. The dimension of the vector space spanned by all nondegenerate invariant symmetric bilinear forms on G is equal to that of the vector space of certain linear transformations on G; this dimension is greater than or equal to m(G) + 1. The centralizer of R in G is equal to the sum of all minimal ideals; it is the direct sum of R ⊥ and the center of G. Finally, G has no strong semisimple ideals if and only if R⊥■R.     

Ultimate boundedness and an attractor for stochastic Hopfield neural networks with time-varying delays

This paper investigates ultimate boundedness and a weak attractor for stochastic Hopfield neural networks (HNN) with time-varying delays. By employing the Lyapunov method and the matrix technique, some novel results and criteria on ultimate boundedness and an attractor for stochastic HNN with time-varying delays are derived. Finally, a numerical example is given to illustrate the correctness and effectiveness of our theoretical results.