基于蒙特卡罗方法的α粒子细胞S值计算

在放射性免疫治疗以及硼中子俘获治疗（BNCT）等放射性治疗过程中,粒子通过与人体组织材料相互作用产生次级电子将能量传递给人体组织,放射性核素在细胞尺度分布的不均匀性将严重影响靶区剂量分布。为深入了解放射性核素在细胞中不同位置分布对靶区剂量影响,采用基于历史凝聚算法的Monte Carlo 工具包Geant4编写了细胞S值计算程序。计算了2种细胞尺寸,12种粒子能量,3种源分布方式的细胞S值,与医学内照射剂量（MIRD）委员会解析算法的计算结果进行对比,发现两者差异在1%以内。证明了Geant4在m尺度下细胞剂量计算的可行性,并对BNCT治疗过程中产生的粒子(1.47 MeV与1.78 MeV)的细胞S值进行计算。     

Computer design of a compact cyclotron

Here we present results of the computer design of the structural elements of a compact cyclotron by the example of HITFiL cyclotron selected as the driving accelerator that is under construction at the Institute of Modern Physics (Lanzhou, China). In the article a complex approach to modeling of the compact cyclotron, including calculation of electromagnetic fields of the structural elements and beam dynamics calculations, is described. The existing design data on the axial injection, magnetic, acceleration and extraction systems of the cyclotron are used as a starting point in the simulation. Some of the upgrades of the cyclotron structural elements were proposed, which led to substantial improvement of the beam quality and transmission.     

103 W in-band dual-end-pumped Ho:YAG laser

An efficient 2?μm in-band pumped Ho:YAG laser was demonstrated. The resonator involves two Ho:YAG crystals, each of which was dual-end-pumped by two orthogonally polarized diode-pumped Tm:YLF lasers. The maximum continuous wave output power of 103?W was achieved, corresponding to a slope efficiency of 67.8% with respect to the incident pump power and an optical-to-optical conversion efficiency of 63.5%. Under Q-switched mode, we obtained 101?W laser output at 30?kHz, corresponding to a slope efficiency of 66.2%. The beam quality or M² factor was found to be less than 2.     

用于诊断纳秒脉冲电流的微分环现场标定技术

分析了用于纳秒脉冲电流测量的微分环标定难点,提出微分环现场标定方法。通过脉冲形成线脉冲充电以解决微分环标定中信噪比较低、可信度较差等问题;分析了脉冲形成线充电时间、充电电压及脉冲形成开关击穿电压等回路参数对标定结果的影响。基于闪光二号加速器,对测量二极管电流的微分环进行了现场标定,前级隔离开关平均击穿电压为25 kV时,微分环标定回路电流达到1.3 kA,微分环灵敏度为9.311010,方差为0.151010。     

铜铟镓硒太阳能电池多层膜的结构分析

对于溅射后硒化和共蒸发等方法制备的铜铟镓硒（CIGS）太阳能电池薄膜,利用多种分析方法研究了CIGS多层膜的复杂结构等．研究表明：卢瑟福背散射（RBS）在分析CIGS多层膜方面具有其独特优势和可靠的结果;溅射后硒化方法制备的CIGS薄膜中,Ga和In在CIGS薄膜中呈梯度分布,这种Ga表层少而内层多的不均匀分布与Mo层没有必然关系;RBS和俄歇电子能谱分析（AES）均显示CIGS太阳能电池器件多层膜界面处存在扩散,尤其是CdS与CIGS,Mo与CIGS的界面处;X射线荧光（XRF）结果表明,电池效率最高的CIGS层中In,Ga比例为In：Ga=0．7：0.3;X射线衍射（XRD）结果显示：退火后的CIGS／Mo薄膜结晶品质得到了优化．     

Characterization of different-Al-content AlGaN/GaN heterostructures on sapphire

Al x Ga 1-x N/GaN high-electron-mobility transistor (HEMT) structures with Al composition ranging from x = 0.13 to 0.36 are grown on sapphire substrates by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). The effects of Al content on crystal quality, surface morphology, optical and electrical characteristics of the AlGaN/GaN heterostructures have been analyzed. Although high Al-content (36%) heterostructure exhibits a distinguished photoluminescence peak related to recombination between the two-dimensional electron gas and photoexcited holes (2DEG-h), its crystal quality and rough surface morphology are poor. 2DEG mobility increases with the Al content up to 26% and then it apparently decreases for high Al-content (36%) AlGaN/GaN heterostructure. The increase of sheet carrier density with the increase of Al content has been observed. A high mobility at room temperature of 2105 cm 2 /V s with a sheet carrier density of n s = 1.10 × 10 13 cm -2 , for a 26% Al-content AlGaN/GaN heterostructure has been obtained, which is approaching state-of-the-art for HEMT grown on SiC. Sheet resistance as low as 274 Ω/□ has also been achieved.     

使用AlN/GaN超晶格势垒层生长高Al组分AlGaN/GaN HEMT结构

在蓝宝石衬底上生长了以AlN/GaN超晶格准AlGaN合金作为势垒的HEMT结构材料,并与传统AlGaN合金势垒样品进行了对比.在高Al组分(≥40%)情况下,超晶格势垒样品的表面形貌明显改进,电学性能特别是2DEG面电子浓度也有所改进.对超晶格势垒生长参数进行了初步优化,使得HEMT结构薄层电阻进一步降低,最后获得了251 Ω/□的薄层电阻. 关键词： AlGaN/GaN 结构 AlN/GaN超晶格 二维电子气 高电子迁移率晶体管     

Microstructure, bonding strength and thermal shock resistance of ceramic coatings on steels prepared by plasma electrolytic oxidation

Ceramic coatings were successfully prepared on steel by plasma electrolytic oxidation (PEO) in aluminate electrolyte and silicate electrolyte, respectively. The microstructure of the coatings including surface morphology, phase and element composition were studied by scanning electron microscopy (SEM) and X-ray diffraction (XRD), respectively. The bonding strength between the ceramic coating and the substrate was tested using different methods including tensile tests and shearing tests. The thermal shock resistance of the coatings was also evaluated. The results indicated that coatings obtained in both electrolytes were porous and coarse. The average diameters of the pores were below 10 μm. PEO coatings obtained in aluminate electrolyte were composed of Fe₃O₄ and FeAl₂O₄, while those obtained in silicate electrolyte were in a noncrystal state. PEO coatings obtained in aluminate electrolyte showed similar change trend of tensile strength and shearing strength with increasing treating time, namely, a relatively high values with middle time treating and low value with short and long time treating. The best coating was the samples treated with 30 min, whose tensile strength was 20.6 MPa and shearing strength was 16 MPa. The tensile strength and shearing strength of coatings obtained in silicate electrolyte were not strongly influenced by the treating time, the values of which were range in 14 ± 2 MPa and 11 ± 2 MPa, respectively. Coatings obtained in both electrolytes showed the best thermal shock resistance with middle time treating. Coatings obtained in silicate electrolyte show a little better thermal shock resistance than those obtained in aluminate electrolyte.     

Exact solutions to a coupled modified KdV equations with non-uniformity terms

The bilinear form of a coupled modified KdV equations with non-uniformity terms is given and a few soliton solutions are obtained. Furthermore, the multisoliton of the coupled system is expressed by Pfaffian.     

化学沉淀法制备硒化铅薄膜

采用化学沉淀的方法沉淀PbSe薄膜,分别加入缓冲剂联氨(方法A)和碘化钾(方法B)。对反应原理进行了分析,对制备过程进行了优化,分别制备出了高质量的PbSe薄膜。采用XRD、SEM、EDS以及红外光谱测试对所制备样品进行了分析。结果表明,两种方法制备均为PbSe多晶薄膜,方法A制备薄膜结晶质量更好,择优生长方向明显;薄膜颗粒度、表面粗糙度都小于方法B;两种薄膜的Pb元素与Se元素比例接近化学计量比,方法B含有少量I元素;两种方法制备样品的吸收边相对带边跃迁都发生蓝移。